公开(公告)号：US11592740B2

公开(公告)日：2023-02-28

申请号：US15961601

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Jang Fung Chen ,  Christopher Dennis Bencher ,  David Markle

IPC: G03F7/00 ,  G02F1/1335 ,  G02B5/30 ,  G03F7/20

Abstract: The present disclosure generally relates to methods and systems for manufacturing wire grid polarizers (WGP) using Markle-Dyson exposure systems and dual tone development (DTD) frequency doubling. In one embodiment, the method includes depositing a photoresist layer over an aluminum-coated display substrate, patterning the photoresist layer by dual tone development using a Markle-Dyson system to form a photoresist pattern, and transferring the photoresist pattern into the aluminum-coated display substrate to manufacture a WGP having finer pitch, for example less than or equal to about 100 nm, and increased frequency.

公开(公告)号：US10921714B2

公开(公告)日：2021-02-16

申请号：US16895971

申请日：2020-06-08

Applicant: Applied Materials, Inc.

Inventor： Joseph R. Johnson ,  Thomas L. Laidig ,  Christopher Dennis Bencher

IPC: G03F7/20 ,  G03B27/70

Abstract: Embodiments of the present disclosure generally provide improved photolithography systems and methods using a digital micromirror device (DMD). The DMD comprises columns and rows of micromirrors disposed opposite a substrate. Light beams reflect off the micromirrors onto the substrate, resulting in a patterned substrate. Certain subsets of the columns and rows of micromirrors may be positioned to the “off” position, such that they dump light, in order to correct for uniformity errors, i.e., features larger than desired, in the patterned substrate. Similarly, certain subsets of the columns and rows of micromirrors may be defaulted to the “off” position and selectively allowed to return to their programmed position in order to correct for uniformity errors, i.e., features smaller than desired, in the patterned substrate.

公开(公告)号：US10761430B2

公开(公告)日：2020-09-01

申请号：US16512975

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Joseph R. Johnson

IPC: G03F7/20

Abstract: The embodiments described herein relate to a software application platform, which enhances image patterns resolution on a substrate. The application platform method includes running an algorithm to provide different target polygons for forming a pattern on a target. A minimum feature size which may be formed by a DMD is determined. For each target polygons smaller than the minimum feature size determining to line bias or shot bias the one or more target polygons to achieve an acceptable exposure contrast at the target polygon boundary. The one or more target polygons smaller than the minimum feature size are biased to form a digitized pattern on the substrate. Electromagnetic radiation is delivered to reflect off of a first mirror of the DMD when the centroid for the first mirror is within the one or more target polygons.

公开(公告)号：US10599044B1

公开(公告)日：2020-03-24

申请号：US16267353

申请日：2019-02-04

Applicant: Applied Materials, Inc.

Inventor： Guoheng Zhao ,  Jeremy Rolfe Nesbitt ,  Christopher Dennis Bencher ,  Mehdi Vaez-Iravani

IPC: G03F7/20 ,  G02B26/08

Abstract: The present disclosure generally relates to lithography devices comprising an image projection system. The image projection system comprises a fiber bundle coupled to a first homogenizer and a second homogenizer. The first homogenizer is offset from the second homogenizer along a scan direction. The first homogenizer is optically aligned with a first digital micromirror device, and the second homogenizer is optically aligned with a second digital micromirror device. The first digital micromirror device is offset from the second digital micromirror device along the scan direction within an optical field of view of a projection lens. A scan field of the first digital micromirror device overlaps or aligns with a scan field of the second digital micromirror device to eliminate a gap between the scan field of the first digital micromirror device and the scan field of the second digital micromirror device.

公开(公告)号：US20180188655A1

公开(公告)日：2018-07-05

申请号：US15910775

申请日：2018-03-02

Applicant: Applied Materials, Inc.

Inventor： Jang Fung Chen ,  Christopher Dennis Bencher

IPC: G03F7/20 ,  G02B27/10

CPC classification number: G03F7/7015 ,  G02B27/10 ,  G02B27/106 ,  G03F7/70275 ,  G03F7/70391 ,  G03F7/70641

Abstract: Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one light beam. The illumination tool also includes a beamsplitter adjacent the microLED array, a camera adjacent the beamsplitter, and a projection optics system adjacent the beamsplitter.

公开(公告)号：US09791786B1

公开(公告)日：2017-10-17

申请号：US15188193

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Joseph R. Johnson ,  Christopher Dennis Bencher ,  Thomas L. Laidig

IPC: G03F1/38 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/38 ,  G03F1/70 ,  G03F7/70291 ,  G03F7/70433 ,  G03F7/70508

Abstract: Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure pattern alteration software application provides for line wave reduction by serrating polygon edges at affected angles to reduce edge placement errors during maskless lithography patterning in a manufacturing process.

公开(公告)号：US20160282280A1

公开(公告)日：2016-09-29

申请号：US15031690

申请日：2014-12-18

Applicant: Applied Materials, Inc.

Inventor： Majeed A. Foad ,  Christopher Dennis Bencher ,  Christopher G. Talbot ,  John Christopher Moran

IPC: G01N21/95

CPC classification number: G01N21/95 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/061

Abstract: An extreme ultraviolet (EUV) substrate inspection system and method of manufacturing thereof, includes: an EUV source directing EUV illumination through an aperture; a light detector detecting mask illumination with reduced off axis rays reflected off from a substrate; and a computing device processing image data detected by the light detector.

Abstract translation: 极紫外（EUV）基板检查系统及其制造方法包括：EUV源，通过孔指示EUV照明; 光检测器，检测从基板反射的具有减少的离轴光线的掩模照明; 以及处理由光检测器检测的图像数据的计算装置。

公开(公告)号：US09411237B2

公开(公告)日：2016-08-09

申请号：US14205324

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Christopher Dennis Bencher ,  Huixiong Dai ,  Timothy Michaelson ,  Subhash Deshmukh

IPC: G03F7/40 ,  G03F7/36

CPC classification number: H01L21/67069 ,  C23C16/45544 ,  G03F7/36 ,  G03F7/405 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/68707

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract translation: 在一些实施例中，提供了在衬底上形成蚀刻掩模的方法，其包括（1）在衬底上形成抗蚀剂层; （2）将抗蚀剂层的一个或多个区域暴露于能量源，以便改变暴露区域的物理性质和化学性质中的至少一个; （3）对抗蚀剂层进行硬化处理以提高抗蚀剂层相对于抗蚀剂层的第二区域的第一区域的耐蚀刻性，硬化过程包括将抗蚀剂层暴露于原子层内的一个或多个反应性物质 沉积（ALD）室; 和（4）干蚀刻抗蚀剂层以除去一个或多个第二区域并在抗蚀剂层中形成图案。 提供其他实施例。

公开(公告)号：US20160208415A1

公开(公告)日：2016-07-21

申请号：US14908505

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Christopher Dennis Bencher ,  Peng Xie ,  Stephen Moffatt ,  Bruce E. Adams ,  Majeed A. Foad

IPC: C30B30/04 ,  C30B19/08 ,  C30B29/02

CPC classification number: C30B30/04 ,  C23C14/04 ,  C23C14/16 ,  C23C14/5806 ,  C30B19/08 ,  C30B29/02

Abstract: A magnetic field guided crystal orientation system, and a method of operation of a magnetic field guided crystal orientation system thereof, including: a work platform; a heating element above the work platform for selectively heating a base layer having grains on a wafer substrate where the wafer substrate is a part of a wafer on the work platform; and a magnetic assembly fixed relative to the heating element for aligning the grains of the base layer using a magnetic field of 10 Tesla or greater for formation of an interconnect having a crystal orientation of grains in the interconnect matching the crystal orientation of the grains of the base layer.

Abstract translation: 磁场引导晶体取向系统及其磁场引导晶体取向系统的操作方法，包括：工作平台; 工作平台上方的加热元件，用于选择性地加热晶片衬底上具有晶粒的基底层，其中晶片衬底是工作平台上的晶片的一部分; 以及相对于所述加热元件固定的磁性组件，用于使用10特斯拉或更大的磁场对准所述基底层的晶粒，以形成所述互连中的晶粒取向与所述晶体的晶体取向相匹配 基层。

公开(公告)号：US12224272B2

公开(公告)日：2025-02-11

申请号：US17701599

申请日：2022-03-22

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Byung Sung Kwak ,  Mingwei Zhu ,  Hou T. Ng ,  Nag B. Patibandla ,  Christopher Dennis Bencher

IPC: H01L25/16 ,  H01L25/075 ,  H01L33/00 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L33/32

Abstract: A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.