CHEMICAL MECHANICAL POLISHING USING TIME SHARE CONTROL

    公开(公告)号:US20220234163A1

    公开(公告)日:2022-07-28

    申请号:US17716941

    申请日:2022-04-08

    Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

    WAFER EDGE ASYMMETRY CORRECTION USING GROOVE IN POLISHING PAD

    公开(公告)号:US20210154796A1

    公开(公告)日:2021-05-27

    申请号:US16953139

    申请日:2020-11-19

    Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

    Acoustic Emission Monitoring and Endpoint for Chemical Mechanical Polishing
    15.
    发明申请
    Acoustic Emission Monitoring and Endpoint for Chemical Mechanical Polishing 审中-公开
    声发射监测和化学机械抛光终点

    公开(公告)号:US20160256978A1

    公开(公告)日:2016-09-08

    申请号:US14639859

    申请日:2015-03-05

    CPC classification number: B24B37/013 B24B49/003

    Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and an in-situ acoustic emission monitoring system including an acoustic emission sensor supported by the platen, a waveguide configured to extending through at least a portion of the polishing pad, and a processor to receive a signal from the acoustic emission sensor. The in-situ acoustic emission monitoring system is configured to detect acoustic events caused by deformation of the substrate and transmitted through the waveguide, and the processor is configured to determine a polishing endpoint based on the signal.

    Abstract translation: 化学机械抛光装置包括用于支撑抛光垫的压板,以及包括由压板支撑的声发射传感器的原位声发射监测系统,配置成延伸穿过抛光垫的至少一部分的波导,以及 处理器以从声发射传感器接收信号。 原位声发射监测系统被配置为检测由基板的变形引起的并通过波导传播的声学事件,并且处理器被配置为基于该信号来确定抛光端点。

    COLD LIQUID POLISHING CONTROL
    16.
    发明申请

    公开(公告)号:US20250114909A1

    公开(公告)日:2025-04-10

    申请号:US18481761

    申请日:2023-10-05

    Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid dispenser having a polishing liquid port positioned over the platen to deliver polishing liquid onto the polishing pad, a temperature control system including coolant liquid fluid reservoirs for containing coolant fluids, a thermal controller configured to control the temperature of the coolant fluid within the coolant fluid reservoirs, and a first dispenser having openings in fluid connection with the coolant fluid reservoirs, the openings positioned configured to spray an aerosolized coolant liquid directly onto the polishing pad, and a second dispenser having a coolant port in fluid connection with the coolant fluid reservoirs, the coolant port positioned over the platen and configured to flow a stream of coolant liquid directly onto the polishing pad.

    STEAM GENERATION FOR CHEMICAL MECHANICAL POLISHING

    公开(公告)号:US20240342855A1

    公开(公告)日:2024-10-17

    申请号:US18632044

    申请日:2024-04-10

    CPC classification number: B24B37/015 B24B37/04

    Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, a motor to generate relative motion, a steam generator, and an arm extending over the platen with and at least one opening to deliver steam from the steam generator onto the polishing pad. The steam generator includes a canister, a barrier in the canister dividing the canister into a lower chamber having a water inlet and an upper chamber having a steam outlet, a heating element configured to apply heat to a portion of lower chamber, and a nucleation surface positioned in the lower chamber. The barrier has apertures for steam to pass from the lower chamber to the upper chamber and allows for condensation to pass from the upper chamber to the lower chamber.

    Chemical mechanical polishing with applied magnetic field

    公开(公告)号:US11787008B2

    公开(公告)日:2023-10-17

    申请号:US17127065

    申请日:2020-12-18

    CPC classification number: B24B37/046 B24B37/105 B24B37/20 B24B57/02

    Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

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