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    EPI base ring
    12.
    发明授权
    EPI base ring 有权

    公开(公告)号：US10119192B2

    公开(公告)日：2018-11-06

    申请号：US15136119

    申请日：2016-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Steve Aboagye ,  Paul Brillhart ,  Surajit Kumar ,  Anzhong Chang ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson

    IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48

    Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

    EPI base ring
    14.
    发明授权
    EPI base ring 有权
    EPI基圈

    公开(公告)号：US09322097B2

    公开(公告)日：2016-04-26

    申请号：US13846355

    申请日：2013-03-18

    Applicant: Applied Materials, Inc.

    Inventor： Steve Aboagye ,  Paul Brillhart ,  Surajit Kumar ,  Anzhong Chang ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48

    CPC classification number: C23C16/45502 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/481

    Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

    Abstract translation: 本文所述的实施例涉及用于衬底处理室中的基座环组件。 在一个实施例中，基环组件包括尺寸适于容纳在基板处理室的内圆周内的环体，环体包括用于通过基板的装载口，气体入口和气体出口，其中， 气体入口和气体出口设置在环体的相对端，并且配置成设置在环体的顶表面上的上环和被配置为设置在环体的底表面上的下环，其中， 一旦组装，上环，下环和环体大致同心或同轴。

    Susceptor support shaft for improved wafer temperature uniformity and process repeatability
    15.
    发明授权
    Susceptor support shaft for improved wafer temperature uniformity and process repeatability 有权
    Susceptor支撑轴用于提高晶片温度均匀性和工艺重复性

    公开(公告)号：US09123765B2

    公开(公告)日：2015-09-01

    申请号：US14182634

    申请日：2014-02-18

    Applicant: Applied Materials, Inc.

    Inventor： Mehmet Tugrul Samir ,  Shu-Kwan Lau

    IPC: B05C13/00 ,  H01L21/687 ,  B05C11/08

    CPC classification number: H01L21/68792 ,  B05C11/08 ,  H01L21/68742

    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber.

    Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。

    Liner for epi chamber
    19.
    发明授权
    Liner for epi chamber 有权

    公开(公告)号：US11060203B2

    公开(公告)日：2021-07-13

    申请号：US14826065

    申请日：2015-08-13

    Applicant: Applied Materials, Inc.

    Inventor： Shu-Kwan Lau ,  Mehmet Tugrul Samir ,  Aaron Miller

    IPC: C30B25/08 ,  C30B25/14 ,  C23C16/455 ,  C23C16/44 ,  C30B35/00

    Abstract: Embodiments disclosed herein describe a liner assembly including a plurality of individually separated gas passages. The liner assembly provides control of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to the present embodiments.

    Semiconductor processing chamber multistage mixing apparatus
    20.
    发明授权
    Semiconductor processing chamber multistage mixing apparatus 有权

    公开(公告)号：US10679870B2

    公开(公告)日：2020-06-09

    申请号：US15897860

    申请日：2018-02-15

    Applicant: Applied Materials, Inc.

    Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

    IPC: H01L21/311 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44 ,  B01F5/00

    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

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