公开(公告)号：US11306395B2

公开(公告)日：2022-04-19

申请号：US15636307

申请日：2017-06-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US20150096973A1

公开(公告)日：2015-04-09

申请号：US14563044

申请日：2014-12-08

Applicant: ASM IP Holding B.V.

Inventor： Todd Dunn ,  Fred Alokozai ,  Jerry Winkler ,  Michael Halpin

IPC: H01L21/67 ,  F28D15/00 ,  H01L21/687

CPC classification number: H01L21/67103 ,  F28D15/00 ,  H01L21/67109 ,  H01L21/68714 ,  H01L21/68742

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

Abstract translation: 晶片处理装置可以包括具有顶侧和背面的基座，具有间隔构件和加热构件的基座加热器，可移除地安装在基座和基座加热器之间的垫片，由基座背面形成的空腔，基座 加热器和垫片，与空腔连通的流体入口以及与空腔连通的多个流体出口。

公开(公告)号：US20150024609A1

公开(公告)日：2015-01-22

申请号：US13948055

申请日：2013-07-22

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01J37/32357 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3145 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

Abstract translation: 一种处理室，包括具有处理区域的反应室，与处理区域连通的处理气体入口，与处理气体入口连通的第一激发物质生成区域和与处理气体入口连通的第二退出物质生成区域 。 一种处理衬底的方法，包括以下步骤：在处理区域内加载衬底，激活第一激发物种生成区以在第一脉冲期间向处理区域提供第一激发物质前体，以及激活第二激发物质产生区 在第二脉冲期间将不同于第一激发物质前体的第二激发物质前体提供给处理区域。

公开(公告)号：US08894870B2

公开(公告)日：2014-11-25

申请号：US13784362

申请日：2013-03-04

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Fred Alokozai

IPC: H01L21/302 ,  C23F1/00 ,  C23C16/44 ,  C23F1/08

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.

Abstract translation: 一种用于蚀刻材料的系统和方法，包括具有XYZ制剂的化合物，其中X和Y是一种或多种金属，Z选自一种或多种13-16族元素，例如碳，氮，硼，硅 ，硫，硒和碲。 该方法包括形成一种或多种第一挥发性化合物和金属贫化层的第一蚀刻工艺以及去除金属贫化层的至少一部分的第二蚀刻工艺。

公开(公告)号：US20140220247A1

公开(公告)日：2014-08-07

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US20140217065A1

公开(公告)日：2014-08-07

申请号：US13784362

申请日：2013-03-04

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Fred Alokozai

IPC: C23F1/08 ,  C23F1/00

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.

Abstract translation: 一种用于蚀刻材料的系统和方法，包括具有XYZ制剂的化合物，其中X和Y是一种或多种金属，Z选自一种或多种13-16族元素，例如碳，氮，硼，硅 ，硫，硒和碲。 该方法包括形成一种或多种第一挥发性化合物和金属贫化层的第一蚀刻工艺以及去除金属贫化层的至少一部分的第二蚀刻工艺。

公开(公告)号：US11976361B2

公开(公告)日：2024-05-07

申请号：US17714383

申请日：2022-04-06

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/52

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US11967488B2

公开(公告)日：2024-04-23

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/32 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01J37/32495 ,  C23C16/32 ,  C23C16/4404 ,  C23C16/4405

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US20240014012A9

公开(公告)日：2024-01-11

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

CPC classification number: H01J37/32495 ,  C23C16/4405 ,  C23C16/4404 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US20200303196A1

公开(公告)日：2020-09-24

申请号：US16893206

申请日：2020-06-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.