公开(公告)号：US20210358741A1

公开(公告)日：2021-11-18

申请号：US17317965

申请日：2021-05-12

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC: H01L21/02 ,  C30B25/18 ,  C30B25/16 ,  C30B29/52 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20210102290A1

公开(公告)日：2021-04-08

申请号：US17060764

申请日：2020-10-01

Applicant: ASM IP Holding B.V.

Inventor： Tomas Hernandez Acosta ,  Alexandros Demos ,  Peter Westrom ,  Caleb Miskin ,  Amir Kajbafvala ,  Ali Moballegh

IPC: C23C16/455 ,  C23C16/52 ,  B01J4/00 ,  C23C16/46

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20250079167A1

公开(公告)日：2025-03-06

申请号：US18815636

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Ernesto Suarez ,  Amir Kajbafvala ,  Arun Murali ,  Caleb Miskin ,  Alexandros Demos

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/167

Abstract: A method of forming a semiconductor structure includes seating a substrate on a substrate support arranged within a chamber arrangement of a semiconductor processing system, flowing a boron-containing precursor to the chamber arrangement at a first boron-containing precursor mass flow rate, and depositing a first portion of a first SiGe:B layer using the boron-containing precursor. Mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate, a second portion of the first SiGe:B layer is deposited using the boron-containing precursor, mass flow rate of the boron-containing precursor to the chamber arrangement is further increased to a second boron-containing precursor mass flow rate, and a second SiGe:B layer is deposited onto the first SiGe:B layer using the boron-containing precursor, the increase in the mass flow rate of the boron-containing precursor to the intermediate boron-containing precursor mass flow rate limits boron concentration at a first SiGe:B layer-to-second SiGe:B layer interface defined between the first SiGe:B layer and the second SiGe:B layer to less than a boron concentration within the second SiGe:B layer. Semiconductor processing systems and related computer program products are also provided.

公开(公告)号：US12163227B2

公开(公告)日：2024-12-10

申请号：US17684523

申请日：2022-03-02

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: C23C16/458 ,  C23C16/22 ,  C23C16/52

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

公开(公告)号：US20240332016A1

公开(公告)日：2024-10-03

申请号：US18742250

申请日：2024-06-13

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC: H01L21/02 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/52

CPC classification number: H01L21/0262 ,  C23C16/08 ,  C23C16/45512 ,  C23C16/52 ,  C30B25/165 ,  C30B25/186 ,  C30B29/52 ,  H01L21/02532

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20240274437A1

公开(公告)日：2024-08-15

申请号：US18644475

申请日：2024-04-24

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Joe Margetis ,  Xin Sun ,  David Kohen ,  Dieter Pierreux

IPC: H01L21/02 ,  C23C16/08 ,  C23C16/24 ,  C23C16/42 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L21/0262 ,  C23C16/08 ,  C23C16/24 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/52 ,  C30B25/165 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

公开(公告)号：US20240204057A1

公开(公告)日：2024-06-20

申请号：US18540230

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: H01L29/161 ,  H01L21/02 ,  H01L21/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/161 ,  H01L21/02532 ,  H01L22/12 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: Methods for forming semiconductor stacked structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual step of a sequential deposition process. Semiconductor stacked structures including two or more bilayers of SiGe/Si with intervening interface layers are also disclosed.

公开(公告)号：US20240175138A1

公开(公告)日：2024-05-30

申请号：US18518393

申请日：2023-11-22

Applicant: ASM IP HOlding B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Xing Lin ,  Arun Murali ,  Gregory Deye ,  Frederick Aryeetey ,  Amir Kajbafvala ,  Caleb Miskin ,  Alexandros Demos

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/67253

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

公开(公告)号：US20220298643A1

公开(公告)日：2022-09-22

申请号：US17697079

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC: C23C16/48 ,  H01L29/66 ,  C23C16/52 ,  G01K7/10 ,  G01J5/00 ,  C23C16/30 ,  C23C16/24

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20250084534A1

公开(公告)日：2025-03-13

申请号：US18961650

申请日：2024-11-27

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Caleb Miskin

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.