Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
    13.
    发明授权
    Multi-directional scanning of movable member and ion beam monitoring arrangement therefor 有权
    可移动构件的多方向扫描和离子束监测装置

    公开(公告)号:US06956223B2

    公开(公告)日:2005-10-18

    申请号:US10119290

    申请日:2002-04-10

    摘要: Semiconductor processing apparatus is disclosed which provides for movement of a scanning arm 60 of a substrate or wafer holder 180, in at least two generally orthogonal directions (so-called X-Y scanning). Scanning in a first direction is longitudinally through an aperture 55 in a vacuum chamber wall. The arm 60 is reciprocated by one or more linear motors 90A, 90B. The arm 60 is supported relative to a slide 100 using gimballed air bearings so as to provide cantilever support for the arm relative to the slide 100. A compliant feedthrough 130 into the vacuum chamber for the arm 60 then acts as a vacuum seal and guide but does not itself need to provide bearing support. A Faraday 450 is attached to the arm 60 adjacent the substrate holder 180 to allow beam profiling to be carried out both prior to and during implant. The Faraday 450 can instead or additionally be mounted adjacent the rear of the substrate holder or at 90° to it to allow beam profiling to be carried out prior to implant, with the substrate support reversed or horizontal and out of the beam line.

    摘要翻译: 公开了半导体处理装置,其提供基板或晶片保持器180的扫描臂60在至少两个大致正交的方向(所谓的X-Y扫描)上的移动。 沿着第一方向进行的扫描纵向地穿过真空室壁中的孔口55。 臂60由一个或多个线性电动机90A,90B往复运动。臂60相对于滑块100被支撑,使用支撑的空气轴承,以便相对于滑块100为臂提供悬臂支撑。 进入用于臂60的真空室中的柔性馈通件130然后用作真空密封和引导件,但本身不需要提供轴承支撑件。 法拉第450附接到靠近基板保持器180的臂60,以允许在植入之前和期间执行光束轮廓。 法拉第450可以替代地或附加地安装在靠近衬底保持器的后部或与其相邻的90°处,以允许在植入之前执行光束轮廓,其中衬底支撑件反向或水平并且离开光束线。

    Post-decel magnetic energy filter for ion implantation systems
    14.
    发明授权
    Post-decel magnetic energy filter for ion implantation systems 有权
    用于离子注入系统的减速磁能过滤器

    公开(公告)号:US08124946B2

    公开(公告)日:2012-02-28

    申请号:US12477631

    申请日:2009-06-03

    摘要: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

    摘要翻译: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法,其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析,其中选择离子。 一旦离子束被质量分析,离子束然后通过减速器减速,并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供,其中形成磁场以截取离开减速器的离子束中的离子,以选择性地过滤不需要的离子和快速中性粒子。

    Ion beam diagnostics
    17.
    发明申请
    Ion beam diagnostics 失效
    离子束诊断

    公开(公告)号:US20080142727A1

    公开(公告)日:2008-06-19

    申请号:US11589156

    申请日:2006-10-30

    IPC分类号: G01K1/08

    摘要: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.

    摘要翻译: 本发明涉及一种测量离子束的性质的方法,例如离子束电流分布或离子束的发射率。 采用包括离子束电流传感器阵列的法拉第阵列。 该阵列可以在阵列的平面处提供离子束电流分布。 法拉第阵列还与可以通过法拉第阵列上游的离子束移动的阻塞元件结合使用,这掩盖了来自法拉第阵列的离子束的变化部分。 适当地操纵来自法拉第的信号允许针对封闭元件的平面确定离子束电流轮廓,并且还确定待确定的阻塞元件平面处的离子束的发射率。

    POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
    18.
    发明申请
    POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS 有权
    用于离子植入系统的后胶磁能过滤器

    公开(公告)号:US20090321630A1

    公开(公告)日:2009-12-31

    申请号:US12477631

    申请日:2009-06-03

    IPC分类号: B01D59/44 A61N5/00 H01J37/08

    摘要: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

    摘要翻译: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法,其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析,其中选择离子。 一旦离子束被质量分析,离子束然后通过减速器减速,并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供,其中形成磁场以截取离开减速器的离子束中的离子,以选择性地过滤不需要的离子和快速中性粒子。

    Ion beam diagnostics
    19.
    发明授权
    Ion beam diagnostics 失效
    离子束诊断

    公开(公告)号:US07479644B2

    公开(公告)日:2009-01-20

    申请号:US11589156

    申请日:2006-10-30

    IPC分类号: H01J37/317 H01L21/265

    摘要: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.

    摘要翻译: 本发明涉及一种测量离子束的性质的方法,例如离子束电流分布或离子束的发射率。 采用包括离子束电流传感器阵列的法拉第阵列。 阵列可以在阵列的平面处提供离子束电流分布。 法拉第阵列还与可以通过法拉第阵列上游的离子束移动的阻塞元件结合使用,这掩盖了来自法拉第阵列的离子束的变化部分。 适当地操纵来自法拉第的信号允许针对封闭元件的平面确定离子束电流轮廓,并且还确定待确定的阻塞元件平面处的离子束的发射率。