公开(公告)号：US20060051937A1

公开(公告)日：2006-03-09

申请号：US11194941

申请日：2005-08-01

申请人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

发明人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

IPC分类号： H01L21/30

CPC分类号： H01L33/405 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/32014 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

摘要翻译： 对于使用薄膜技术的半导体芯片（1），将有源层序列（20）施加到生长衬底（3）上，然后在其上形成反射导电接触材料层（40）。 有源层序列被图案化以形成有源层堆叠（2），并且反射导电接触材料层（40）被图案化以位于每个有源层堆叠（2）上。 然后，将柔性导电箔（6）施加到作为辅助载体层的接触材料层，并除去生长衬底。

公开(公告)号：US20070117235A1

公开(公告)日：2007-05-24

申请号：US11654224

申请日：2007-01-16

申请人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

发明人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L33/40 ,  H01L33/32

摘要： A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.

摘要翻译： 一种用于制造光电半导体芯片（1）的电接触的方法，包括在半导体芯片上提供由金属或金属合金构成的镜层（2）; 在所述镜层上提供保护层（3）; 在所述保护层上提供阻挡层和耦合层（5）的层序列; 以及在所述层序列上提供焊料层（8）。

公开(公告)号：US07696078B2

公开(公告)日：2010-04-13

申请号：US11654224

申请日：2007-01-16

申请人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

发明人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

IPC分类号： H01L21/44

CPC分类号： H01L33/40 ,  H01L33/32

摘要： A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.

摘要翻译： 一种用于制造光电半导体芯片（1）的电接触的方法，包括在半导体芯片上提供由金属或金属合金构成的镜层（2）; 在所述镜层上提供保护层（3）; 在所述保护层上提供阻挡层和耦合层（5）的层序列; 以及在所述层序列上提供焊料层（8）。

公开(公告)号：US07164158B2

公开(公告)日：2007-01-16

申请号：US10789199

申请日：2004-02-26

申请人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

发明人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

摘要翻译： 一种用于光电器件的电接触件，其包括金属或金属合金的镜层（2），用于减少镜层（2）的腐蚀的保护层（3），阻挡层（4） ，耦合层（5）和焊料层（8）。 这种类型的接触的特征在于高反射率，与半导体的良好的欧姆接触，对半导体的良好的粘合性以及形成彼此接触的层的良好粘附性，良好的热稳定性，相对于环境影响的高稳定性， 以及可焊性和图案性。

公开(公告)号：US20110210357A1

公开(公告)日：2011-09-01

申请号：US12996622

申请日：2009-06-03

申请人： Stephan Kaiser ,  Andreas Ploessl

发明人： Stephan Kaiser ,  Andreas Ploessl

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).

摘要翻译： 一种制造光电子部件的方法，包括以下步骤：A）提供生长衬底（1）; B）外延生长至少一个半导体层（2），以产生操作上有效的区域; C）将金属镜层（3）施加到半导体层（2）上; D）施加用于所述部件的电子接触的至少一个接触层（8）; E）从半导体层（2）分离生长衬底（1），从而暴露半导体层（2）的表面; 以及F）通过蚀刻方法从方法步骤E）中暴露的表面侧构造半导体层（2）。

公开(公告)号：US10128405B2

公开(公告)日：2018-11-13

申请号：US12996622

申请日：2009-06-03

申请人： Stephan Kaiser ,  Andreas Ploessl

发明人： Stephan Kaiser ,  Andreas Ploessl

IPC分类号： H01L33/60 ,  H01L33/00 ,  H01L33/20 ,  H01L33/40

摘要： A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).

公开(公告)号：US07442966B2

公开(公告)日：2008-10-28

申请号：US11585632

申请日：2006-10-24

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

摘要翻译： 提出了发射电磁辐射的半导体芯片。 芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。 芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中 相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

公开(公告)号：US07129528B2

公开(公告)日：2006-10-31

申请号：US10671854

申请日：2003-09-25

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13). The textured reflection surface (131) can increase the amount of light which is decoupled at the radiation-outcoupling surface (111) by virtue of the fact that a beam (3), after double reflection on the reflection surface (131), is more likely not to be totally reflected.

摘要翻译： 发射电磁辐射的半导体芯片及其制造方法。 为了提高发射电磁辐射的半导体芯片的光输出，在半导体芯片的p侧上集成纹理化反射面（131）。 半导体芯片具有基于GaN的外延生产的半导体层堆叠（1），其包括n导电半导体层（11），p导电半导体层（13）和电磁辐射产生区域（12），其布置 在这两个半导体层（11,13）之间。 背离辐射产生区域（12）的p导电半导体层（13）的表面设置有三维金字塔状结构（15）。 镜面层（40）布置在整个这个纹理表面上。 在镜面层（40）和导电性半导体层（13）之间形成纹理反射面（131）。 纹理反射表面（131）可以通过在反射表面（131）上双重反射之后的光束（3）更多地增加在辐射输出耦合表面（111）处解耦的光量 可能不会被完全反映。

公开(公告)号：US20050239270A1

公开(公告)日：2005-10-27

申请号：US10503042

申请日：2003-01-30

申请人： Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

发明人： Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC分类号： B23K26/00 ,  B23K26/40 ,  B23K101/40 ,  C30B33/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/762 ,  H01L33/00 ,  H01S5/323 ,  H01L21/301

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

摘要翻译： 一种用于制造半导体部件的方法，特别是薄膜部件，通过用具有平板空间光束轮廓的激光束照射与基板分离的半导体层。 此外，半导体层在分离之前被施加到具有适应的热膨胀系数的载体上。 该方法特别适用于含有氮化物半导体的半导体层。

公开(公告)号：US06770542B2

公开(公告)日：2004-08-03

申请号：US10324428

申请日：2002-12-20

申请人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

发明人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

IPC分类号： H01L2130

CPC分类号： H01L21/2007

摘要： A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

摘要翻译： 提供了一种用于制造含有至少一个半导体层的有用层的方法，其中有用层与载体分离。 在这种情况下，将有用层施加到载体上，并且在接合温度下通过连接层将辅助载体施加到远离载体的有用层的该侧。 之后，载体在大于或等于接合温度的温度下剥离，并且小于连接层的熔点。 将有用层的至少一部分与辅助载体一起从载体上除去。