公开(公告)号：US11705365B2

公开(公告)日：2023-07-18

申请号：US17323381

申请日：2021-05-18

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng Lei ,  Kurtis Leschkies ,  Roman Gouk ,  Giback Park ,  Kyuil Cho ,  Tapash Chakraborty ,  Han-Wen Chen ,  Steven Verhaverbeke

IPC: H01L21/768 ,  H01L21/48

CPC classification number: H01L21/76825 ,  H01L21/486 ,  H01L21/76877

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

公开(公告)号：US10777405B2

公开(公告)日：2020-09-15

申请号：US15268162

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/67 ,  F26B5/04 ,  F26B21/14

Abstract: A method for processing a substrate is disclosed. The method includes delivering a solvent to a processing chamber and delivering a substrate to the processing chamber. The amount of solvent present in the processing chamber may be configured to submerse the substrate. Liquid CO2 may be delivered to the processing chamber and the liquid CO2 may be mixed with the solvent. Additional liquid CO2 may be delivered to the processing chamber in an amount greater than a volume of the processing chamber to displace the solvent. The liquid CO2 may be phase transitioned to supercritical CO2 in the processing chamber and the substrate may be dried by isothermally depressurizing the processing chamber and exhausting gaseous CO2 from the processing chamber.

公开(公告)号：US10727083B1

公开(公告)日：2020-07-28

申请号：US16284595

申请日：2019-02-25

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Chintan Buch ,  Kyuil Cho ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Vincent Dicaprio

IPC: G03F7/00 ,  H01L21/48

Abstract: The present disclosure generally relates to methods of micro-imprinting panels or substrates for advanced packaging applications. A redistribution layer comprising an epoxy material is deposited on a substrate layer and imprinted with a stamp to form an epoxy substrate patterned with a plurality of vias. The stamp is removed from the epoxy substrate, and the epoxy substrate is optionally etched with a plasma comprising oxygen to prevent the redistribution layer from becoming flowable when cured. A capping layer may optionally be deposited on the surface of the epoxy substrate.

公开(公告)号：US10573510B2

公开(公告)日：2020-02-25

申请号：US16039224

申请日：2018-07-18

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

公开(公告)号：US10304703B2

公开(公告)日：2019-05-28

申请号：US15268158

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC: H01L21/687 ,  B08B7/00 ,  H01L21/67 ,  F26B21/14 ,  H01L21/02 ,  H01L21/677 ,  C11D11/00

Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

公开(公告)号：US09935004B2

公开(公告)日：2018-04-03

申请号：US15382945

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76873 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/40 ,  C23C18/54 ,  C25D3/38 ,  C25D3/48 ,  C25D5/022 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76898

Abstract: A method and apparatus for processing a silicon substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the silicon substrate to an electroplating process by flowing a current through a backside of the silicon substrate to form a metal layer on the metal seed layer.

公开(公告)号：US11424137B2

公开(公告)日：2022-08-23

申请号：US16417124

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC: H01L21/67 ,  C11D11/00 ,  H01L21/02 ,  H01L21/687 ,  H01L21/677 ,  B08B7/00

Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

公开(公告)号：US11281094B2

公开(公告)日：2022-03-22

申请号：US16192546

申请日：2018-11-15

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Giback Park ,  Kyuil Cho ,  Han-Wen Chen ,  Chintan Buch ,  Steven Verhaverbeke ,  Vincent Dicaprio

IPC: G03F7/038 ,  G03F7/00 ,  H01L21/768 ,  G03F7/20

Abstract: A method and apparatus for forming a plurality of vias in panels for advanced packaging applications is disclosed, according to one embodiment. A redistribution layer is deposited on a substrate layer. The redistribution layer may be deposited using a spin coating process, a spray coating process, a drop coating process, or lamination. The redistribution layer is then micro-imprinted using a stamp inside a chamber. The redistribution layer and the stamp are then baked inside the chamber. The stamp is removed from the redistribution layer to form a plurality of vias in the redistribution layer. Excess residue built-up on the redistribution layer may be removed using a descumming process. A residual thickness layer disposed between the bottom of each of the plurality of vias and the top of the substrate layer may have thickness of less than about 1 μm.

公开(公告)号：US10211072B2

公开(公告)日：2019-02-19

申请号：US15840900

申请日：2017-12-13

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Roman Gouk ,  Guan Huei See ,  Yu Gu ,  Arvind Sundarrajan ,  Kyuil Cho ,  Colin Costano Neikirk ,  Boyi Fu

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/31

Abstract: Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the methods disclosed herein include depositing a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and the carrier substrate they are positioned on, before forming a reconstituted substrate with an epoxy molding compound. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.

公开(公告)号：US09343664B2

公开(公告)日：2016-05-17

申请号：US14677761

申请日：2015-04-02

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Alexander Kontos ,  Adolph Miller Allen ,  Kevin Moraes

IPC: B44C1/22 ,  H01L43/12 ,  H01F41/34 ,  H01L21/285 ,  H01L21/308

CPC classification number: H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

Abstract translation: 描述了在基板上形成具有磁特性图案的磁性层的方法和装置。 该方法包括使用金属氮化物硬掩模层通过等离子体曝光对磁性层进行图案化。 使用具有氧化硅图案负材料的纳米压印图案化工艺对金属氮化物层进行构图。 在使用含卤素和含氧远距离等离子体的金属氮化物中形成图案，并且在使用苛性湿法剥离法等离子体暴露后除去。 所有加工都是在低温下进行，以避免热损坏磁性材料。