公开(公告)号：US20170114462A1

公开(公告)日：2017-04-27

申请号：US15290029

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Zheng YUAN ,  Jang Seok OH ,  Joseph Jamil FARAH ,  Rongping WANG

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/32899 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

Abstract: Embodiments of the present disclosure generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool includes a plurality of process chambers connected to a transfer chamber and each process chamber may simultaneously process four or more substrates. In order to reduce cost, each process chamber includes a substrate support for supporting four or more substrates, single showerhead disposed over the substrate support, and a single radio frequency power source electrically coupled to the showerhead. The showerhead may include a first surface facing the substrate support and a second surface opposite the first surface. A plurality of gas passages may be formed in the showerhead extending from the first surface to the second surface. Process uniformity is improved by increasing the density of the gas passages from the center of the showerhead to the edge of the showerhead.

公开(公告)号：US20170027049A1

公开(公告)日：2017-01-26

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  H01L21/67 ,  H01J37/32

CPC classification number: H05H1/2406 ,  H01J37/3211 ,  H01J37/32348 ,  H01J2237/022 ,  H01J2237/327 ,  H01J2237/335 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4667 ,  H05H2245/1225 ,  H05H2245/123

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Abstract translation: 本文公开的实施例包括用于减轻半导体工艺中产生的化合物的等离子体源，减排系统和真空处理系统。 在一个实施例中，等离子体源包括介电管和围绕管的线圈天线。 线圈天线​​包括多个匝，并且至少一匝短路。 选择性地短路一圈或多圈线圈天线有助于降低线圈天线的电感，从而允许更高的功率供应到覆盖更多处理量的线圈天线。 提供给线圈天线的较高功率和较大的处理量导致改进的DRE。

公开(公告)号：US20160133442A1

公开(公告)日：2016-05-12

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US20150255256A1

公开(公告)日：2015-09-10

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。