公开(公告)号：US20230317455A1

公开(公告)日：2023-10-05

申请号：US18206514

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC classification number: H01L21/0338 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  C23C16/32 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20190252158A1

公开(公告)日：2019-08-15

申请号：US16188722

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Abdul Aziz KHAJA ,  Zheng John YE ,  Amit Kumar BANSAL

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/44 ,  C23C16/36 ,  C23C16/34 ,  C23C16/458 ,  C23C16/02 ,  H01L21/683

CPC classification number: H01J37/32477 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/347 ,  C23C16/36 ,  C23C16/4404 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/6831

Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

公开(公告)号：US20180337061A1

公开(公告)日：2018-11-22

申请号：US15599920

申请日：2017-05-19

Applicant: Applied Materials, Inc.

Inventor： Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Ziqing DUAN ,  Abhijit Basu MALLICK

IPC: H01L21/32 ,  H01L21/306

Abstract: Embodiments described herein generally relate methods for selective deposition of carbon structures. In one embodiment, a method includes forming energized carbon species in a process chamber, diffusing the energized carbon species through a metal layer, wherein the metal layer is disposed on a first surface of a first material that is coplanar with a second surface of a second material, and forming a carbon structure between the first surface of the first material and the metal layer from the energized carbon species. Because the carbon structure is selectively deposited on the first surface and self-aligned to the first material, the possibility of overlay or misalignment of subsequent device layers formed on the first surface of the first material after the removal of the carbon structure is significantly reduced.

公开(公告)号：US20180076042A1

公开(公告)日：2018-03-15

申请号：US15695269

申请日：2017-09-05

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Ziqing DUAN ,  Milind GADRE ,  Praket P. JHA ,  Abhijit Basu MALLICK ,  Deenesh PADHI

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/30

CPC classification number: H01L21/28525 ,  C23C16/045 ,  C23C16/24 ,  C23C16/30 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/32055

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate and selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer.

公开(公告)号：US20170162417A1

公开(公告)日：2017-06-08

申请号：US15370682

申请日：2016-12-06

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Pramit MANNA ,  Michael Wenyoung TSIANG ,  Allen KO ,  Wenjiao WANG ,  Yongjing LIN ,  Prashant Kumar KULSHRESHTHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Kwangduk Douglas LEE ,  Karthik Thimmavajjula NARASIMHA ,  Ziqing DUAN ,  Deenesh PADHI

IPC: H01L21/683 ,  C23C16/505 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.