公开(公告)号：US09382625B2

公开(公告)日：2016-07-05

申请号：US14267865

申请日：2014-05-01

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Jingjing Liu ,  Yongmei Chen ,  Ludovic Godet ,  Chentsau Ying ,  Shambhu N. Roy

IPC: C23C16/56 ,  C23C16/27 ,  C23C16/46 ,  C23C16/455 ,  C23C16/505

CPC classification number: C23C16/56 ,  C23C16/27 ,  C23C16/272 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/505

Abstract: Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a deposition gas comprising an alkane and a hydrogen containing gas at a first pressure, delivering the activated deposition gas to the substrate at a second pressure which is less than the first pressure, forming a nanocrystalline diamond layer, treating the layer with an activated hydrogen containing gas to remove one or more polymers from the surface and repeating the cycle to achieve a desired thickness.

Abstract translation: 本文公开了制备纳米晶体金刚石层的方法。 形成层的方法可以包括在第一压力下激活包括烷烃和含氢气体的沉积气体，在小于第一压力的第二压力下将活化的沉积气体输送到衬底，形成纳米晶体金刚石层 用活化的含氢气体处理层以从表面去除一种或多种聚合物并重复该循环以达到所需的厚度。

公开(公告)号：US10096466B2

公开(公告)日：2018-10-09

申请号：US15073444

申请日：2016-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Srinivas Nemani ,  Michael W. Stowell ,  Qiwei Liang ,  Douglas A. Buchberger

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/768

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.

公开(公告)号：US09852902B2

公开(公告)日：2017-12-26

申请号：US14506536

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ludovic Godet ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

IPC: H01L21/02 ,  H01J37/32 ,  C23C14/04 ,  H01L21/033

CPC classification number: H01L21/02527 ,  C23C14/046 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/033 ,  H01L21/67253

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

公开(公告)号：US09773675B2

公开(公告)日：2017-09-26

申请号：US15432368

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/033 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L21/3105 ,  H01L27/108 ,  H01L27/12

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US09620407B2

公开(公告)日：2017-04-11

申请号：US14613545

申请日：2015-02-04

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/82 ,  H01L27/092 ,  H01L21/311 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/033 ,  H01L21/8238 ,  H01L21/3115 ,  H01L21/32

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US20160276150A1

公开(公告)日：2016-09-22

申请号：US15073444

申请日：2016-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Srinivas Nemani ,  Michael W. Stowell ,  Qiwei Liang ,  Douglas A. Buchberger

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/0217 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理设置在处理室中的衬底的方法包括：（a）通过将衬底暴露于从远程等离子体源产生的第一反应物质和第一前体而在衬底上沉积材料层，其中 第一活性物质与第一前体反应; 和（b）通过将衬底暴露于处理室内从等离子体源产生的等离子体处理所有或基本上全部沉积的材料层; 其中所述远程等离子体源或所述第二等离子体源中的至少一个被脉冲以控制沉积周期和处理周期。

公开(公告)号：US20160099154A1

公开(公告)日：2016-04-07

申请号：US14506536

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ludovic Godet ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

IPC: H01L21/306 ,  H01J37/32 ,  C23C16/50 ,  H01L21/02 ,  C23C14/48

CPC classification number: H01L21/02527 ,  C23C14/046 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/033 ,  H01L21/67253

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

Abstract translation: 离子物质被供给到包括衬底上的图案层的工件。 使用离子种类的注入工艺将材料层沉积在图案层上。 在一个实施例中，沉积的材料层对图案层具有蚀刻选择性。 在一个实施例中，在图案层上形成沟槽。 沟槽包括底部和侧壁。 使用离子注入工艺将材料层沉积到沟槽中。 材料层沿着侧壁的方向沉积在沟槽的底部上。

公开(公告)号：US09190290B2

公开(公告)日：2015-11-17

申请号：US14231180

申请日：2014-03-31

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Chentsau Ying ,  Srinivas D. Nemani

IPC: H01L37/00 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137 ,  H01L29/66545

Abstract: A method of selectively dry etching silicon from patterned heterogeneous structures is described. The method optionally includes a plasma process prior to a remote plasma etch. The plasma process may use a biased plasma to treat some crystalline silicon (e.g. polysilicon or single crystal silicon) to form amorphous silicon. Subsequently, a remote plasma is formed using a hydrogen-containing precursor to form plasma effluents. The plasma effluents are passed into the substrate processing region to etch the amorphous silicon from the patterned substrate. By implementing biased plasma processes, the normally isotropic etch may be transformed into a directional (anisotropic) etch despite the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了从图案化异质结构中选择性地干蚀刻硅的方法。 该方法可选地包括在远程等离子体蚀刻之前的等离子体处理。 等离子体工艺可以使用偏置等离子体来处理一些晶体硅（例如多晶硅或单晶硅）以形成非晶硅。 随后，使用含氢前体形成远程等离子体以形成等离子体流出物。 等离子体流出物流入衬底处理区域以从图案化衬底中蚀刻非晶硅。 通过实施偏压等离子体处理，尽管在蚀刻过程中等离子体激发的远端性质，但是通常的各向同性蚀刻可以转化为定向（各向异性）蚀刻。

公开(公告)号：US20150279687A1

公开(公告)日：2015-10-01

申请号：US14231180

申请日：2014-03-31

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Chentsau Ying ,  Srinivas D. Nemani

IPC: H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137 ,  H01L29/66545

Abstract: A method of selectively dry etching silicon from patterned heterogeneous structures is described. The method optionally includes a plasma process prior to a remote plasma etch. The plasma process may use a biased plasma to treat some crystalline silicon (e.g. polysilicon or single crystal silicon) to form amorphous silicon. Subsequently, a remote plasma is formed using a hydrogen-containing precursor to form plasma effluents. The plasma effluents are passed into the substrate processing region to etch the amorphous silicon from the patterned substrate. By implementing biased plasma processes, the normally isotropic etch may be transformed into a directional (anisotropic) etch despite the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了从图案化异质结构中选择性地干蚀刻硅的方法。 该方法可选地包括在远程等离子体蚀刻之前的等离子体处理。 等离子体工艺可以使用偏置等离子体来处理一些晶体硅（例如多晶硅或单晶硅）以形成非晶硅。 随后，使用含氢前体形成远程等离子体以形成等离子体流出物。 等离子体流出物流入衬底处理区域以从图案化衬底中蚀刻非晶硅。 通过实施偏压等离子体处理，尽管在蚀刻过程中等离子体激发的远端性质，但是通常的各向同性蚀刻可以转化为定向（各向异性）蚀刻。