公开(公告)号：US20180019346A1

公开(公告)日：2018-01-18

申请号：US15718778

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng GAO ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

公开(公告)号：US09812469B2

公开(公告)日：2017-11-07

申请号：US15150549

申请日：2016-05-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Feng Zhang ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Qi Yao ,  Zhengliang Li ,  Xiangchun Kong

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/42384

Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.

公开(公告)号：US20170098714A1

公开(公告)日：2017-04-06

申请号：US14905251

申请日：2015-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Qi Yao ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L29/786 ,  H01L21/28 ,  H01L29/49 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L29/78606 ,  H01L21/28 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

公开(公告)号：US09583646B2

公开(公告)日：2017-02-28

申请号：US14417355

申请日：2014-06-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shi Shu ,  Jingxia Gu ,  Xiangchun Kong ,  Feng Zhang ,  Guanbao Hui

IPC: H01L21/00 ,  H01L33/00 ,  H01L31/0216 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L31/02164 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/5284

Abstract: A bottom-emitting substrate, a display device and a method for manufacturing the bottom emitting substrate are provided. The bottom-emitting substrate comprises: a base substrate (1); a black matrix layer (2) with a plurality of opening regions and a plurality of non-opening regions disposed on the base substrate (1); and an array substrate unit disposed on the black matrix layer (2), projections of metal layers in the array substrate unit on the black matrix layer (2) locating within the plurality of non-opening regions of the black matrix layer (2). A method for manufacturing the bottom-emitting substrate and a display device comprising the bottom-emitting substrate are also provided.

Abstract translation: 提供底部发射基板，显示装置和制造底部发射基板的方法。 底部发射衬底包括：基底（1）; 具有多个开口区域的黑矩阵层（2）和设置在基底基板（1）上的多个非开口区域; 以及配置在所述黑矩阵层（2）上的阵列基板单元，位于所述黑矩阵层（2）上的所述阵列基板单元中的位于所述黑矩阵层（2）的所述多个非开口区域内的金属层的突起。 还提供了用于制造底部发射基板的方法和包括底部发射基板的显示装置。

公开(公告)号：US09455324B2

公开(公告)日：2016-09-27

申请号：US14376028

申请日：2013-11-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Qi Yao ,  Luke Ding ,  Bing Sun ,  Xiangchun Kong

IPC: H01L29/423 ,  H01L27/12 ,  H01L29/51 ,  G02F1/1368 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/42364 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2029/42388

Abstract: The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the array substrate, and a display device. The thin film transistor includes a substrate and a gate, an insulation layer, an active layer, a source and a drain which are provided on the substrate. A spacer layer is also provided between the gate and the active layer, and the spacer layer overlaps at least with one of the gate and the active layer having a smaller area in an orthographic projection direction. The spacer layer can effectively prevent material forming the gate from being diffused into the active layer, thereby ensuring stability of performance of the thin film transistor. In the array substrate utilizing the thin film transistor, the spacer layer further extends to a region corresponding to a gate line.

Abstract translation: 本发明提供一种薄膜晶体管和制造薄膜晶体管的方法，阵列基板和制造阵列基板的方法以及显示装置。 薄膜晶体管包括设置在基板上的基板和栅极，绝缘层，有源层，源极和漏极。 间隔层还设置在栅极和有源层之间，并且间隔层至少与栅极和有源层中的一个重叠，在正投影方向上具有较小的面积。 间隔层可以有效地防止形成栅极的材料扩散到有源层中，从而确保薄膜晶体管的性能的稳定性。 在利用薄膜晶体管的阵列基板中，间隔层进一步延伸到对应于栅极线的区域。

公开(公告)号：US10115765B2

公开(公告)日：2018-10-30

申请号：US14909712

申请日：2015-08-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Zhanfeng Cao ,  Qi Yao ,  Zhengliang Li ,  Xiaolong He ,  Bin Zhang ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L27/146 ,  G01T1/24

Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.

公开(公告)号：US10049612B2

公开(公告)日：2018-08-14

申请号：US14892521

申请日：2015-04-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Bin Zhang ,  Zhanfeng Cao ,  Xiangchun Kong ,  Qi Yao ,  Jincheng Gao ,  Zhengliang Li ,  Xiaolong He

IPC: G09G3/32 ,  G02B26/02 ,  H01L27/32 ,  H01L27/12 ,  G09G3/34

CPC classification number: G09G3/32 ,  G02B26/02 ,  G09G3/3433 ,  G09G2320/0646 ,  H01L27/1214 ,  H01L27/32

Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

公开(公告)号：US09873773B2

公开(公告)日：2018-01-23

申请号：US15134708

申请日：2016-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Zhang ,  Xiangchun Kong

IPC: G21F1/06 ,  G21F5/00 ,  C08K3/00 ,  C04B35/00 ,  C08K3/22 ,  C08K3/24 ,  H01F1/00

CPC classification number: C08K3/00 ,  C04B35/00 ,  C08K3/22 ,  C08K3/24 ,  C08K2003/2241 ,  G21F1/06 ,  G21F5/00 ,  H01F1/00 ,  H01F1/348 ,  H05K9/0083

Abstract: Disclosed are a composite material and a method for preparing the same. The composite material is consisted of TiO2 and BaZn1.2Co0.8Fe16O27. The composite material of the invention has the advantages of high absorption frequency band, good compatibility and wide frequency band, and it is applicable for the shell protection material of a mobile phone or a TV set, thereby absorbing the electromagnetic wave band that is the most harmful to human bodies, without influencing the normal communication function of an electronic device, for example, a mobile phone.

公开(公告)号：US09835921B2

公开(公告)日：2017-12-05

申请号：US14436004

申请日：2014-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Luke Ding ,  Wenlin Zhang ,  Xiangchun Kong ,  Feng Zhang ,  Qi Yao ,  Zhixing Zhang

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136222 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/124 ,  H01L27/127

Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a plurality of pixel unit regions each including a thin-film transistor (TFTs) and a pixel electrode. A first insulating layer provided with a first through hole and a second through hole is formed between an active layer of the TFT and the pixel electrode. A source electrode of the TFT is connected with the active layer through the first through hole. A drain electrode of the TFT is lapped onto the pixel electrode and connected with the active layer through the second through hole. The array substrate can prevent the oxidization of metal such as copper in the process of patterning a transparent conductive film.

公开(公告)号：US09735194B2

公开(公告)日：2017-08-15

申请号：US15088177

申请日：2016-04-01

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Zhanfeng Cao ,  Xiangchun Kong ,  Qi Yao ,  Zhengliang Li ,  Bin Zhang ,  Xiaolong He

IPC: H01L27/146 ,  G01T1/20 ,  G01T1/24

CPC classification number: H01L27/14663 ,  G01T1/2018 ,  G01T1/241 ,  H01L27/14612

Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.