Abstract:
An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof and including a first side, a second side opposite the first side, a central bore extending between the first and second sides and adapted to receive a light emitting diode, and extraction features on the second side. A light diverter extends into the central bore for diverting light into and generally along the width of the body of material. The extraction features direct light out of the first side and wherein at least one extraction feature has an extraction surface dimension transverse to the thickness that is between about 5% and about 75% the overall thickness of the body of material.
Abstract:
An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof and including a first side, a second side opposite the first side, a central bore extending between the first and second sides and adapted to receive a light emitting diode, and extraction features on the second side. A light diverter extends into the central bore for diverting light into and generally along the width of the body of material. The extraction features direct light out of the first side and wherein at least one extraction feature has an extraction surface dimension transverse to the thickness that is between about 5% and about 75% the overall thickness of the body of material.
Abstract:
A LED lamp includes a plurality of red LEDs and a plurality of blue LEDs, a phosphor covering at least the plurality of blue LEDs, where the lamp has an LPW of at least 200 in a steady state operation.
Abstract:
Solid state light emitting apparatuses include blue LEDs (including but not limited to a combination of short wavelength and long wavelength blue LEDs) to stimulate green lumiphors, with supplemental emissions by either red lumiphors and/or red solid state light emitters, to provide aggregate emissions with high S/P ratio (e.g., at least 1.95) and favorably high color rendering values (e.g., 85 or greater), preferably in combination with high brightness and high luminous efficacy. In certain embodiments, a solid state light emitting apparatus may be devoid of a LED having a peak wavelength of from 470-599 nm and/or devoid of lumiphors peak wavelengths in the yellow range. Multiple LEDs may be arranged in an emitter package.
Abstract:
Methods for fabricating light emitting diode (LED) chips one of which comprises flip-chip mounting a plurality of LEDs on a surface of a submount wafer and forming a coating over said LEDs. The coating comprising a conversion material at least partially covering the LEDs. The coating is planarized to the desired thickness with the coating being continuous and unobstructed on the top surface of the LEDs. The LEDs chips are then singulated from the submount wafer. An LED chip comprising a lateral geometry LED having first and second contacts, with the LED flip-chip mounted to a submount by a conductive bonding material. A phosphor loaded binder coats and at least partially covers the LED. The binder provides a substantially continuous and unobstructed coating over the LED. The phosphor within the coating absorbs and converts the wavelength of at least some of the LED light with the coating planarized to achieve the desired emission color point of the LED chip.
Abstract:
An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two quantities of different phosphor particles and are arranged in a densely packed layer within the coating at the light emitting surface. The densely packed layer of phosphor particles does not extend all the way through the coating.
Abstract:
The present disclosure is directed to LED components, methods and systems using such components, having light emitter devices with emissions tuned to meet CRI and LER goal values at a defined CCT. These emitter devices and methods may use a combination of light emitting diodes and quantum dots to tune the emission to meet these criteria. The quantum dots may incorporate additional features to protect the quantum dots from environmental conditions and improve heat dissipation, such as coatings and thermally conductive features.
Abstract:
An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.
Abstract:
This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.
Abstract:
An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof and including a first side, a second side opposite the first side, a central bore extending between the first and second sides and adapted to receive a light emitting diode, and extraction features on the second side. A light diverter extends into the central bore for diverting light into and generally along the width of the body of material. The extraction features direct light out of the first side and wherein at least one extraction feature has an extraction surface dimension transverse to the thickness that is between about 5% and about 75% the overall thickness of the body of material.