公开(公告)号：US20150267081A1

公开(公告)日：2015-09-24

申请号：US14222086

申请日：2014-03-21

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Jeffrey Dysard ,  Steven Grumbine

IPC: C09G1/02 ,  C23F3/03 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/06

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括分散在液体载体中的水性液体载体和胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒具有至少6mV的永久正电荷。 大约30％以上的胶态二氧化硅磨料颗粒包括三个或更多个聚集的一次粒子。

公开(公告)号：US08920667B2

公开(公告)日：2014-12-30

申请号：US13754413

申请日：2013-01-30

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Matthias Stender

IPC: C03C15/00 ,  C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31058

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.

Abstract translation: 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）研磨颗粒，其中磨料颗粒包括氧化锆，（b）至少一种金属离子氧化剂，其中至少一种金属离子氧化剂包括Co3 +，Au +，Ag +，Pt2 +，Hg2 +，Cr3 + ，Fe3 +，Ce4 +或Cu2 +，和（c）水性载体，其中化学机械抛光组合物的pH在约1至约7的范围内，并且其中化学机械抛光组合物不含有过氧化物 型氧化器。

公开(公告)号：US09567491B2

公开(公告)日：2017-02-14

申请号：US14750204

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Tina Li

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321 ,  C09K3/14 ,  C09K13/00

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除层的至少一部分。

公开(公告)号：US09556363B2

公开(公告)日：2017-01-31

申请号：US14750271

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Wei Weng ,  Lei Liu ,  Alexei Leonov

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/321 ,  C09K13/00

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除铜，铜屏障和电介质层中的至少一种的至少一部分。

公开(公告)号：US09309442B2

公开(公告)日：2016-04-12

申请号：US14222086

申请日：2014-03-21

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Jeffrey Dysard ,  Steven Grumbine

IPC: C09G1/02 ,  C23F3/03 ,  B24B37/04 ,  C23F3/06

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/06

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括分散在液体载体中的水性液体载体和胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒具有至少6mV的永久正电荷。 大约30％以上的胶态二氧化硅磨料颗粒包括三个或更多个聚集的初级颗粒。

公开(公告)号：US09303189B2

公开(公告)日：2016-04-05

申请号：US14203693

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150376463A1

公开(公告)日：2015-12-31

申请号：US14750271

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Wei Weng ,  Lei Liu ,  Alexei Leonov

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除铜，铜屏障和电介质层中的至少一种的至少一部分。

公开(公告)号：US20150259574A1

公开(公告)日：2015-09-17

申请号：US14203693

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US08961807B2

公开(公告)日：2015-02-24

申请号：US13841344

申请日：2013-03-15

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine

IPC: C03C15/00 ,  C09G1/02 ,  B44C1/22

CPC classification number: C09G1/02 ,  C08L33/26

Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.

Abstract translation: 公开了抛光组合物和抛光基材的方法。 组合物具有低负荷（例如，高达约0.1重量％）的磨料颗粒。 抛光组合物还含有水和至少一种阴离子表面活性剂。 在一些实施方案中，磨料颗粒是α氧化铝颗粒（例如，涂覆有机聚合物）。 抛光组合物可以用于例如抛光弱强度的基材如有机聚合物。 在一些实施方案中，在组合物中包含氧化至少一种硅和有机聚合物的试剂。

公开(公告)号：US20140263184A1

公开(公告)日：2014-09-18

申请号：US13841344

申请日：2013-03-15

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： Lin Fu ,  Steven Grumbine

IPC: C09G1/02 ,  B44C1/22

CPC classification number: C09G1/02 ,  C08L33/26

Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.

Abstract translation: 公开了抛光组合物和抛光基材的方法。 组合物具有低负荷（例如，高达约0.1重量％）的磨料颗粒。 抛光组合物还含有水和至少一种阴离子表面活性剂。 在一些实施方案中，磨料颗粒是α氧化铝颗粒（例如，涂覆有机聚合物）。 抛光组合物可以用于例如抛光弱强度的基材如有机聚合物。 在一些实施方案中，在组合物中包含氧化至少一种硅和有机聚合物的试剂。