Light-emitting device
    14.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US09232586B2

    公开(公告)日:2016-01-05

    申请号:US13336735

    申请日:2011-12-23

    IPC分类号: H05B37/02 H05B33/08

    摘要: A light-emitting device is capable of receiving a first voltage signal, a second voltage signal, and a third voltage signal in sequence. The light-emitting device includes a first light-emitting unit, a second light-emitting unit, and a switching. The first voltage signal, the second voltage signal, and the third voltage signal is configured to introduce a first current signal, a second current signal, and a third current signal, respectively. The light-emitting device is configured to emit a first light when introducing the first current signal, the second current signal, and the third current signal. The light-emitting device is configured to emit a second light when introducing the second current signal and the third current signal. The light-emitting device is configured to emit a third light when introducing the second current signal.

    摘要翻译: 发光装置能够依次接收第一电压信号,第二电压信号和第三电压信号。 发光装置包括第一发光单元,第二发光单元和开关。 第一电压信号,第二电压信号和第三电压信号被配置为分别引入第一电流信号,第二电流信号和第三电流信号。 发光装置被配置为在引入第一电流信号,第二电流信号和第三电流信号时发射第一光。 发光装置被配置为在引入第二电流信号和第三电流信号时发射第二光。 发光装置被配置为在引入第二电流信号时发射第三光。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    17.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号:US20130032848A1

    公开(公告)日:2013-02-07

    申请号:US13565993

    申请日:2012-08-03

    IPC分类号: H01L33/48

    摘要: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译: 光电子器件包括半导体堆叠,其包括第一半导体层,有源层和第二半导体层,与第一半导体层电连接的第一电极,与第二半导体层电连接的第二电极,其中存在最小距离 D1在第一电极和第二电极之间形成,第三电极形成在第一电极的一部分上并与第一电极电连接,第四电极形成在第一电极的一部分上并在第二电极的一部分上,以及 与第二电极电连接,其中在第三电极和第四电极之间具有最小距离D2,并且最小距离D2小于最小距离D1。

    OPTOELECTRONIC DEVICE
    19.
    发明申请
    OPTOELECTRONIC DEVICE 审中-公开
    光电器件

    公开(公告)号:US20110157884A1

    公开(公告)日:2011-06-30

    申请号:US12981788

    申请日:2010-12-30

    IPC分类号: F21V9/00 F21S4/00

    摘要: A light-emitting device includes an insulating carrier; a light-emitting array formed on the insulating carrier including a first light-emitting circuit having a first light-emitting unit, wherein the first light-emitting circuit is a one-way circuit, a second light-emitting circuit having a second light-emitting unit, wherein the second light-emitting circuit is a one-way circuit, a first conductive layer, a second conductive layer, and a third conductive layer, wherein the first light-emitting circuit is formed between the first conductive layer and the second conductive layer and connects with them electrically, the second light-emitting circuit is formed between the second conductive layer and the third conductive layer and connects with them electrically, wherein an area of the second conductive layer is greater or equal to 1.9×103 μm2.

    摘要翻译: 发光装置包括绝缘载体; 形成在绝缘载体上的发光阵列,包括具有第一发光单元的第一发光电路,其中所述第一发光电路是单向电路,第二发光电路具有第二发光单元, 发光单元,其中第二发光电路是单向电路,第一导电层,第二导电层和第三导电层,其中第一发光电路形成在第一导电层和第二导电层之间 导电层并与它们电连接,第二发光电路形成在第二导电层和第三导电层之间并与它们电连接,其中第二导电层的面积大于或等于1.9×10 3μm2。