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    LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL
    11.
    发明申请
    LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL 审中-公开

    公开(公告)号：US20200316724A1

    公开(公告)日：2020-10-08

    申请号：US16909299

    申请日：2020-06-23

    Applicant: Cree, Inc.

    Inventor： Matthew Donofrio ,  John Edmond ,  Harshad Golakia

    IPC: B23K26/53 ,  B23K26/06 ,  B23K26/08 ,  B23K26/359 ,  H01L21/02 ,  H01L21/268 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L21/82 ,  H01L29/16 ,  B23K26/00

    Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

    CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION
    12.
    发明申请
    CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION 审中-公开

    公开(公告)号：US20200211850A1

    公开(公告)日：2020-07-02

    申请号：US16274045

    申请日：2019-02-12

    Applicant: Cree, Inc.

    Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

    IPC: H01L21/18 ,  H01L21/02 ,  B23K26/00 ,  H01L21/20

    Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

    Laser-assisted method for parting crystalline material
    13.
    发明授权
    Laser-assisted method for parting crystalline material 有权

    公开(公告)号：US10576585B1

    公开(公告)日：2020-03-03

    申请号：US16274064

    申请日：2019-02-12

    Applicant: Cree, Inc.

    Inventor： Matthew Donofrio ,  John Edmond ,  Harshad Golakia

    IPC: H01L29/16 ,  H01L21/67 ,  B23K26/53 ,  H01L21/268 ,  H01L21/683 ,  H01L21/02 ,  H01L21/82 ,  H01L21/306 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/359 ,  B23K103/00 ,  B23K101/40

    Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

    Optoelectronic Structures with High Lumens Per Wafer
    15.
    发明申请
    Optoelectronic Structures with High Lumens Per Wafer 审中-公开
    具有高流明每个晶圆的光电结构

    公开(公告)号：US20130146904A1

    公开(公告)日：2013-06-13

    申请号：US13693776

    申请日：2012-12-04

    Applicant: Cree, Inc.

    Inventor： John Edmond ,  David Todd Emerson

    IPC: H01L33/08

    CPC classification number: H01L33/08 ,  H01L33/0095 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.

    Abstract translation: 光电结构包括晶片，晶片表面上的多个发光二极管结构，以及在多个发光二极管结构上包括波长转换材料的涂层。 发光二极管结构和涂层被配置为响应于提供给发光二极管结构的电能而发出白光。 来自单个晶片的发光二极管结构被配置为产生超过80万流明的聚集光输出。

    CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION
    18.
    发明申请
    CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION 有权

    公开(公告)号：US20210225652A1

    公开(公告)日：2021-07-22

    申请号：US17225384

    申请日：2021-04-08

    Applicant: Cree, Inc.

    Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

    IPC: H01L21/18 ,  H01L21/20 ,  B23K26/00 ,  H01L21/02

    Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

    Silicon carbide wafers with relaxed positive bow and related methods
    19.
    发明授权
    Silicon carbide wafers with relaxed positive bow and related methods 有权

    公开(公告)号：US11034056B2

    公开(公告)日：2021-06-15

    申请号：US16784311

    申请日：2020-02-07

    Applicant: Cree, Inc.

    Inventor： Simon Bubel ,  Matthew Donofrio ,  John Edmond ,  Ian Currier

    IPC: B28D5/00 ,  H01L29/16

    Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

    Carrier-assisted method for parting crystalline material along laser damage region
    20.
    发明授权
    Carrier-assisted method for parting crystalline material along laser damage region 有权

    公开(公告)号：US11024501B2

    公开(公告)日：2021-06-01

    申请号：US16274045

    申请日：2019-02-12

    Applicant: Cree, Inc.

    Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

    IPC: C30B33/02 ,  H01L21/18 ,  H01L21/20 ,  B23K26/00 ,  H01L21/02

    Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

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