公开(公告)号：US20080311751A1

公开(公告)日：2008-12-18

申请号：US11658461

申请日：2005-07-01

申请人： Franz Laermer ,  Silvia Kronmueller ,  Tino Fuchs ,  Christina Leinenbach

发明人： Franz Laermer ,  Silvia Kronmueller ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/311 ,  H01L21/306

CPC分类号： H01L21/32137 ,  B81C1/00476 ,  B81C1/00595 ,  H01L21/3065 ,  H01L21/30655

摘要： A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.

摘要翻译： 在蚀刻气体辅助下，在气相蚀刻中至少在区域中蚀刻要除去的层的方法，其中Si1-xGex层是要去除的层，Si1-xGex层被去除的层， ，特别是ClF3。 可以通过Si1-xGex层中的Ge部分来控制Si1-xGex层的蚀刻行为。 蚀刻方法特别适用于在微机械传感器中制造自支撑结构，并且在封闭的中空空间中制造这种自支撑结构，因为作为牺牲层或填充层的Si1-xGex层被高度蚀刻 选择性地相对于硅。

公开(公告)号：US08329555B2

公开(公告)日：2012-12-11

申请号：US12734994

申请日：2008-10-20

申请人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Andreas Scheurle

发明人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Andreas Scheurle

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L21/76879 ,  H01L21/76898 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.

摘要翻译： 一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。

公开(公告)号：US08148234B2

公开(公告)日：2012-04-03

申请号：US12282842

申请日：2007-03-09

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L21/76

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。

公开(公告)号：US20110012248A1

公开(公告)日：2011-01-20

申请号：US12734994

申请日：2008-10-20

申请人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Andreas Scheurle

发明人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Andreas Scheurle

IPC分类号： H01L23/15 ,  H01L21/60 ,  H01R9/00 ,  B05D5/12 ,  C25D5/02

CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L21/76879 ,  H01L21/76898 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.

摘要翻译： 一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。

公开(公告)号：US20090236610A1

公开(公告)日：2009-09-24

申请号：US12282842

申请日：2007-03-09

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。

公开(公告)号：US20120132925A1

公开(公告)日：2012-05-31

申请号：US13366067

申请日：2012-02-03

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L29/24

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供一种制造半导体结构的方法，包括以下步骤：提供晶体半导体衬底（1）; 邻近半导体衬底（1）的表面（OF）设置多孔区域（10）; 从表面（OF）将掺杂剂（12）引入多孔区域（10）中; 并且多孔区域（10）被热再结晶成半导体衬底（1）的结晶掺杂区域（10'），其掺杂类型和/或掺杂浓度和/或掺杂分布与半导体衬底 基板（1）。 同样提供相应的半导体结构。

公开(公告)号：US20100035068A1

公开(公告)日：2010-02-11

申请号：US12308200

申请日：2007-04-27

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： C25D5/00 ,  B32B17/06 ,  H01L21/30

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

公开(公告)号：US08492850B2

公开(公告)日：2013-07-23

申请号：US12308200

申请日：2007-04-27

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L27/088

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

公开(公告)号：US20100203739A1

公开(公告)日：2010-08-12

申请号：US12452692

申请日：2008-07-02

申请人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/3065 ,  B81C1/00531 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/32135

摘要： A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

摘要翻译： 借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法， 包括添加到蚀刻气体中的Cl 2和/或HCl。

公开(公告)号：US08946090B2

公开(公告)日：2015-02-03

申请号：US12452692

申请日：2008-07-02

申请人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/02 ,  B81C1/00 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  B81C1/00531 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/32135

摘要： A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

摘要翻译： 借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法， 包括添加到蚀刻气体中的Cl 2和/或HCl。