公开(公告)号：US07233008B1

公开(公告)日：2007-06-19

申请号：US11080036

申请日：2005-03-14

Applicant: Igor Petrov ,  Dror Shemesh

Inventor： Igor Petrov ,  Dror Shemesh

IPC: G03B27/54 ,  G03B27/42

CPC classification number: G03B27/42 ,  G03B27/54

Abstract: A inspection system includes: a lens arrangement adapted to generate a substantially symmetrical electrostatic field about an optical axis and to direct a primary electron beam towards an object that is oriented in relation to the optical axis at a non-normal angle; and at least on additional electrode, positioned outside the lens arrangement such as to increase symmetry of an electromagnetic field in the vicinity of an interaction point between the primary electron beam and the object. A method for inspecting an object includes: passing a primary electron beam, along an optical axis, through a substantially symmetrical electrostatic field defined within an electron lens arrangement; and propagating the primary electron beam from the lens arrangement towards an interaction point with an object that is oriented in relation to the optical axis at a non-normal angle, while maintaining, by at least one additional electrode positioned outside the lens arrangement, a substantially symmetrical electrical field in a vicinity of the interaction point.

Abstract translation: 检查系统包括：透镜装置，其适于产生围绕光轴的基本上对称的静电场，并且将一次电子束引向朝向相对于光轴以非正常角度取向的物体; 并且至少在位于透镜装置外部的另外的电极上，以增加电子束在一次电子束和物体之间的相互作用点附近的对称性。 用于检查物体的方法包括：使沿着光轴的一次电子束通过限定在电子透镜装置内的基本上对称的静电场; 并且将来自透镜装置的一次电子束传播到与以非正常角度相对于光轴定向的物体的相互作用点，同时通过位于透镜装置外部的至少一个附加电极基本上 在相互作用点附近的对称电场。

公开(公告)号：US06900065B2

公开(公告)日：2005-05-31

申请号：US10327398

申请日：2002-12-19

Applicant: Vicky Rashkovan ,  Dror Shemesh

Inventor： Vicky Rashkovan ,  Dror Shemesh

IPC: G01R31/311 ,  H01L23/544 ,  H01L21/66 ,  G01R31/08 ,  G01R31/26

CPC classification number: H01L22/34 ,  G01R31/311

Abstract: An apparatus and a method for electrically testing a semiconductor wafer, the method including: (i) depositing electrical charges at certain points of a test pattern; (ii) scanning at least a portion of the test pattern such as to enhance charge differences resulting from defects; and (iii) collecting charged particles emitted from the at least scanned portion as a result of the scanning, thus providing an indication about an electrical state of the respective test structure.

Abstract translation: 一种用于电测试半导体晶片的装置和方法，所述方法包括：（i）在测试图案的某些点放置电荷; （ii）扫描至少一部分测试图案，以增强由缺陷导致的电荷差异; 和（iii）作为扫描的结果收集从至少扫描的部分发射的带电粒子，从而提供关于各个测试结构的电状态的指示。

公开(公告)号：US06670610B2

公开(公告)日：2003-12-30

申请号：US10005190

申请日：2001-11-26

Applicant: Dror Shemesh ,  Ariel Ben-Porath ,  Dubi Shachal ,  Alexey Stepanov

Inventor： Dror Shemesh ,  Ariel Ben-Porath ,  Dubi Shachal ,  Alexey Stepanov

IPC: H01J3726

CPC classification number: H01J37/3056 ,  H01J37/304 ,  H01J2237/28

Abstract: A system and method for directing the object, such as a semiconductor die. The system includes a first images such as a scanning electron microscope, a stage for moving the object and a second imager and miller such as a focused ion beam generator. The object is images to locate a desired location in which the object is to be milled and a landmark that is utilized for directing the miller. The system can include additional steps of milling, analyzing and movement of the object.

公开(公告)号：US07683317B2

公开(公告)日：2010-03-23

申请号：US11532465

申请日：2006-09-15

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: H01J40/00 ,  H01J47/00

CPC classification number: H01J37/28 ,  H01J2237/057

Abstract: A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band. A scanning electron microscope that includes a stage for supporting an object that comprises an opaque layer positioned above an intermediate layer; a controller, adapted to receive or define an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illumination optics adapted to illuminate the object with a primary electron beam; an electron spectrometer, controlled by the controller such as to selectively reject electrons in response to the defined energy band; and a processor, coupled to the spectrometer, adapted to generate images from detection signals provided by the spectrometer.

Abstract translation: 一种用于检测隐藏的缺陷和图案的方法，所述方法包括：接收包含位于中间层上方的不透明层的对象; 响应于不透明层的至少一个特性和扫描电子显微镜的至少一个特征限定能带; 用一次电子束照射物体; 以及从到达具有能带内的能量的光谱仪的电子产生图像。 一种扫描电子显微镜，其包括用于支撑物体的台，所述台包括位于中间层上方的不透明层; 控制器，适于响应于所述不透明层的至少一个特性和扫描电子显微镜的至少一个特性接收或限定能带; 适于用一次电子束照射物体的照明光学器件; 由控制器控制的电子光谱仪，以便响应于限定的能带选择性地拒绝电子; 以及耦合到所述光谱仪的处理器，适于从由所述光谱仪提供的检测信号产生图像。

公开(公告)号：US20080258060A1

公开(公告)日：2008-10-23

申请号：US11923407

申请日：2007-10-24

Applicant: JUERGEN FROSIEN ,  Helmut Banzhof ,  Jacob Levin ,  Dror Shemesh

Inventor： JUERGEN FROSIEN ,  Helmut Banzhof ,  Jacob Levin ,  Dror Shemesh

IPC: G01N23/00

CPC classification number: H01J37/1478 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1506 ,  H01J2237/2448 ,  H01J2237/26 ,  H01J2237/2806 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.

Abstract translation: 提供带电粒子束装置，其包括用于产生初级带电粒子束的带电粒子束柱; 聚焦组件，例如带电粒子透镜，例如静电透镜，用于将初级带电粒子束聚焦在样本上; 用于检测从样本出现的带电信号颗粒的检测器; 以及用于偏转初级带电粒子束的偏转器装置。 偏转器布置布置在聚焦组件的下游，并且适于允许带电信号颗粒通过其中。 检测器在由后聚焦偏转器布置限定的偏转方向上相对于光轴横向移位。

公开(公告)号：US07297965B2

公开(公告)日：2007-11-20

申请号：US11119207

申请日：2005-04-28

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: G21K5/10

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract translation: 公开了用于形成物体样品的方法和装置，从物体中提取样品，并对该样品进行微量分析，包括真空室中的表面分析和电子透过性分析。 在一些实施例中，提供了用于对提取的样品的物体横截面进行成像的方法。 任选地，将样品迭代地稀释并在真空室内成像。 在一些实施例中，样品位于包括任选孔的样品支架上。 可选地，样品位于样品载体的表面上，使得物体横截面基本上平行于样品载体的表面。 一旦安装在样品支架上，样品就可以在真空室中进行微量分析，或者加载到装载站上。 在一些实施例中，用基本上正常地入射到物体横截面表面的电子束成像样品。

公开(公告)号：US20060054811A1

公开(公告)日：2006-03-16

申请号：US10530178

申请日：2003-10-08

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: G01N23/00 ,  G21K7/00

CPC classification number: G01N23/2252

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions include a system and method for process monitoring that analyze a cavity before being filled and then analyze emitted X-rays from the cavity after the cavity has been filled with a conductive material. Also included are system and methods for process monitoring that apply a quantitative analysis correction technique on detected X-ray emissions.

Abstract translation: 基于由诸如电子或离子的带电粒子束引起的X射线发射的过程监测的系统和方法包括用于过程监测的系统和方法，其在填充之前分析空腔，然后分析来自腔的发射的X射线 空腔已经填充有导电材料。 还包括用于过程监测的系统和方法，其应用定量分析校正技术检测X射线发射。

公开(公告)号：US20060011868A1

公开(公告)日：2006-01-19

申请号：US11119207

申请日：2005-04-28

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: G21K5/10

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract translation: 公开了用于形成物体样品的方法和装置，从物体中提取样品，并对该样品进行微量分析，包括真空室中的表面分析和电子透过性分析。 在一些实施例中，提供了用于对提取的样品的物体横截面进行成像的方法。 任选地，将样品迭代地稀释并在真空室内成像。 在一些实施例中，样品位于包括任选孔的样品支架上。 可选地，样品位于样品载体的表面上，使得物体横截面基本上平行于样品载体的表面。 一旦安装在样品支架上，样品就可以在真空室中进行微量分析，或者加载到装载站上。 在一些实施例中，用基本上正常地入射到物体横截面表面的电子束成像样品。

公开(公告)号：US20060011867A1

公开(公告)日：2006-01-19

申请号：US11119230

申请日：2005-08-18

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: H01J37/08

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

公开(公告)号：US08709269B2

公开(公告)日：2014-04-29

申请号：US12103458

申请日：2008-04-15

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: H01J37/08

CPC classification number: G01N1/32

Abstract: A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, in which the cross section comprises at least one first portion made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are performed while the specimen is placed in a vacuum chamber.

Abstract translation: 一种用于获得试样横截面图像的方法和系统，该方法包括：研磨试样以暴露试样的横截面，其中横截面包括至少一个由第一部分制成的第一部分 材料和由第二材料制成的至少一个第二部分; 平滑横截面; 执行所述横截面的气体辅助蚀刻，以便在所述截面的所述至少一个第一部分和所述至少一个第二部分之间产生形貌差异; 用导电材料薄层涂覆横截面; 并获得横截面的图像; 其中在将样品放置在真空室中时进行研磨，平滑，执行，涂覆和获得。