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155 条记录 (耗时 0.034 秒)

    Lithography laser system with in-place alignment tool
    16.
    发明授权
    Lithography laser system with in-place alignment tool 有权
    光刻激光系统具有就地对准工具

    公开(公告)号：US06704340B2

    公开(公告)日：2004-03-09

    申请号：US10255806

    申请日：2002-09-25

    申请人： Alexander I. Ershov ,  William N. Partlo ,  Palash P. Das ,  Laura S. Casas ,  Daniel J. W. Brown

    发明人： Alexander I. Ershov ,  William N. Partlo ,  Palash P. Das ,  Laura S. Casas ,  Daniel J. W. Brown

    IPC分类号： H01S310

    CPC分类号： H01S3/2333 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/7055 ,  G03F7/70575 ,  G03F7/70933 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0071 ,  H01S3/02 ,  H01S3/03 ,  H01S3/036 ,  H01S3/038 ,  H01S3/0385 ,  H01S3/0404 ,  H01S3/041 ,  H01S3/08004 ,  H01S3/08009 ,  H01S3/0943 ,  H01S3/097 ,  H01S3/09705 ,  H01S3/0971 ,  H01S3/0975 ,  H01S3/104 ,  H01S3/105 ,  H01S3/1305 ,  H01S3/134 ,  H01S3/139 ,  H01S3/22 ,  H01S3/2207 ,  H01S3/223 ,  H01S3/225 ,  H01S3/2251 ,  H01S3/2256 ,  H01S3/2258 ,  H01S3/2366

    摘要： The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path with optical components adjustable from outside of the enclosure without the need to open it. Targets and beam directors are included within the beam path enclosure and are used to judge the quality of alignment. These target and beam directors are located on a moveable mount which is insertable in the beam path for alignment and are removed out of the beam path for normal operation. The positions of the targets and beam directors are controlled from outside the beam path enclosure. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. In a preferred embodiment the beam directors clients laser beam being aligned to a monitor outside the beam path enclosure to permit the normal to image a cross-section of the beam and the target.

    摘要翻译： 本发明提供一种用于生产线机器的模块化高重复率紫外线气体放电激光源。 该系统包括封闭和清洗的光束路径，光学元件可从外壳外部调节，无需打开。 目标和光束导向器包含在光束路径外壳内，用于判断对准的质量。 这些目标和光束指向器位于可移动的安装件上，该安装件可插入到光束路径中用于对准，并且被移出光束路径以用于正常操作。 目标和光束导向器的位置由光束外壳外部控制。 在优选实施例中，生产线机器是光刻机，并且提供两个单独的放电室，其中之一是主振荡器的一部分，其产生在第二放电室中放大的非常窄的带状晶体束。 该MOPA系统能够以大大提高的光束质量将输出脉冲能量大约增加到相当的单室激光器系统的两倍。 与现有技术的激光系统相比，脉冲放大器使输出脉冲长度加倍，导致脉冲功率（mJ / ns）的降低。 在优选实施例中，光束导向器将激光束与射束路径外部的监视器对准，以允许对光束和靶的横截面进行法向成像。

    High resolution spectral measurement device
    19.
    发明授权
    High resolution spectral measurement device 有权
    高分辨率光谱测量装置

    公开(公告)号：US06713770B2

    公开(公告)日：2004-03-30

    申请号：US10098975

    申请日：2002-03-15

    申请人： Richard L. Sandstrom ,  Alexander I. Ershov ,  William N. Partlo ,  Igor V. Fomenkov ,  Scott T. Smith ,  Daniel J. W. Brown

    发明人： Richard L. Sandstrom ,  Alexander I. Ershov ,  William N. Partlo ,  Igor V. Fomenkov ,  Scott T. Smith ,  Daniel J. W. Brown

    IPC分类号： G01J314

    CPC分类号： G01J3/26 ,  G01J1/4257 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/12 ,  G01J3/1804 ,  G01J3/22 ,  G01J9/02

    摘要： A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the insulator and scanning the laser wavelength over a range which includes the monochromator slit wavelength. In a second embodiment the second slit and the light detector is replaced by a photodiod array and the bandwidth of a laser beam is determined by analyzing a set of scan data from the photodiode array. Alternately, the laser wavelength can be fixed near the middle of the spectrum range of the grating spectrometer, and the etalon can be scanned.

    摘要翻译： 高分辨率光谱测量装置。 优选的实施例在紫外线范围内呈现非常窄的狭缝功能，并且对于测量用于集成电路光刻的窄带准分子激光器的带宽是非常有用的。 来自激光的光被聚焦成漫射器，并且离开扩散器的漫射光照射标准具。 将其从标准具出射的光的一部分收集并引导到位于标准具的边缘图案处的狭缝中。 通过狭缝的光线被准直，并且准直光照射位于大约Littrow配置中的光栅，其根据波长散发光。 表示对应于所选择的标准具条纹的波长的调度光​​的一部分通过第二狭缝并由光检测器监视。 当标准具和光栅调谐到相同的精确波长时，定义狭缝功能，其极窄，例如约0.034μm（FWHM）和约0.091μm（95％积分）。 通过激光束的引导部分进入绝缘体并且在包括单色器狭缝波长的范围内扫描激光波长，可以非常精确地测量激光束的带宽。 在第二实施例中，第二狭缝和光检测器由光电二极管阵列替代，并且通过分析来自光电二极管阵列的一组扫描数据来确定激光束的带宽。 或者，激光波长可以固定在光栅光谱仪的光谱范围附近，可以扫描标准具。

    EUV collector debris management
    20.
    发明授权
    EUV collector debris management 失效
    EUV收集器碎片管理

    公开(公告)号：US08075732B2

    公开(公告)日：2011-12-13

    申请号：US10979945

    申请日：2004-11-01

    申请人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    发明人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    IPC分类号： C23F1/00

    CPC分类号： B08B7/00

    摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    摘要翻译： 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。