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11.VAPOR TRANSPORT DEPOSITION METHOD AND SYSTEM FOR MATERIAL CO-DEPOSITION 审中-公开
Title translation: 蒸气运输沉积方法和材料沉积系统公开(公告)号:US20130089948A1
公开(公告)日:2013-04-11
申请号:US13633664
申请日:2012-10-02
Applicant: First Solar, Inc.
Inventor: Gang Xiong , John Barden
IPC: H01L21/365 , B05B1/24
CPC classification number: C23C14/246 , C23C14/0629 , C23C14/228 , C23C16/45568
Abstract: An improved feeder system and method for vapor transport deposition that includes at least two vaporizers couple to a common distributor for vaporizing and co-depositing at least any two vaporizable materials as a material layer on a substrate. Composition of the material layer can be controlled by changing the flow of vapors from the respective vaporizers into the distributor to adjust the proportion of respective vapors in the combined vapor prior to deposition. Flow of the vapors from the respective vaporizers into the distributor may be controlled by adjusting the flow of carrier gas transporting the raw material into the vaporizer and/or by adjusting the vibration speed and/or amplitude of the powder feeders that process the raw material.
Abstract translation: 一种用于蒸气传输沉积的改进的馈送系统和方法,其包括至少两个蒸发器,其耦合到共同的分配器,用于将至少任意两种可蒸发材料作为材料层共沉积在基板上。 材料层的组成可以通过将蒸气从各蒸发器的流动改变为分布器来控制,以在沉积之前调节蒸气中各蒸气的比例。 可以通过调节将原料输送到蒸发器中的载气的流动和/或通过调节处理原料的粉末进料器的振动速度和/或振幅来控制从相应的蒸发器到分配器的蒸气的流动。
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公开(公告)号:US20200270744A1
公开(公告)日:2020-08-27
申请号:US16758258
申请日:2018-10-24
Applicant: First Solar, Inc.
Inventor: Zhigang Ban , John Barden , Jerry Drennan , Litian Liu , Rick Powell , Nirav Vora , Yaojun Xu
IPC: C23C14/24
Abstract: Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.
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13.Method and apparatus providing multi-step deposition of thin film layer 有权
Title translation: 提供薄膜层多步沉积的方法和装置公开(公告)号:US09337376B2
公开(公告)日:2016-05-10
申请号:US14551707
申请日:2014-11-24
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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14.METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE 审中-公开
Title translation: 在半导体器件的不同层中提供掺杂浓度控制的方法和系统公开(公告)号:US20150171258A1
公开(公告)日:2015-06-18
申请号:US14625649
申请日:2015-02-19
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , John Barden , Feng Liao , Xilin Peng , Rick C. Powell , Kenneth M. Ring , Gang Xiong
IPC: H01L31/18 , C23C16/455 , H01J37/34 , C23C16/48 , C23C16/448 , C23C16/28 , C23C16/52 , C23C16/40
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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15.Method and system of providing dopant concentration control in different layers of a semiconductor device 有权
Title translation: 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统公开(公告)号:US09006020B2
公开(公告)日:2015-04-14
申请号:US13739183
申请日:2013-01-11
Applicant: First Solar, Inc.
Inventor: Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18 , H01L21/02 , H01L31/0296 , H01L31/073
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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16.METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER 有权
Title translation: 提供薄膜层的多步沉积的方法和装置公开(公告)号:US20150079725A1
公开(公告)日:2015-03-19
申请号:US14551707
申请日:2014-11-24
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
IPC: H01L31/18 , H01L21/02 , H01L31/0296
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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17.Method and apparatus providing multi-step deposition of thin film layer 有权
Title translation: 提供薄膜层多步沉积的方法和装置公开(公告)号:US08921147B2
公开(公告)日:2014-12-30
申请号:US13966663
申请日:2013-08-14
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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18.METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER 有权
Title translation: 提供薄膜层的多步沉积的方法和装置公开(公告)号:US20140051206A1
公开(公告)日:2014-02-20
申请号:US13966663
申请日:2013-08-14
Applicant: First Solar, Inc
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
IPC: H01L31/18
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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19.
公开(公告)号:US20130183794A1
公开(公告)日:2013-07-18
申请号:US13739183
申请日:2013-01-11
Applicant: First Solar, Inc.
Inventor: Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
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