摘要:
A bending transducer device for generating electrical energy from deformations, and a circuit module which has such a bending transducer. The bending transducer includes at least one electrically deformable, vibration-capable, electrically conductive support structure, one piezoelectric element and a first contacting element, the conductive support structure having a first restraining area and a second restraining area for restraining the support structure, the piezoelectric element being designed and situated on the support structure in such a way that the piezoelectric element is deformable due to the deformation of the support structure caused by vibrations, and a first electrode for picking up the voltage generated by the deformation of the piezoelectric element is formed and contacted by the support structure, the first contacting element being connected electrically conductively to the support structure outside the first restraining area and the second restraining area.
摘要:
In a method for manufacturing at least one mechanical-electrical energy conversion system including multiple individual parts, and a mechanical-electrical energy conversion, multiple different individual parts are positioned in an assembly device and joined in joining areas assigned to the individual parts in the assembly device, the individual parts including at least one piezoelectric element, one support structure and one seismic mass.
摘要:
A bending transducer device for generating electrical energy includes at least one elastically deformable support structure, one piezoelectric element, and a bearing device. The piezoelectric element is configured and situated on the support structure in such a way that the piezoelectric element is deformable due to a deformation of the support structure caused by vibration, and the support structure is supported vibration-capably in at least one bearing of the bearing device, the bearing being configured as an articulated receptacle, e.g., a hinge.
摘要:
A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要:
In a method for manufacturing at least one mechanical-electrical energy conversion system including multiple individual parts, and a mechanical-electrical energy conversion, multiple different individual parts are positioned in an assembly device and joined in joining areas assigned to the individual parts in the assembly device, the individual parts including at least one piezoelectric element, one support structure and one seismic mass.
摘要:
A piezoelectric generator includes a piezoelectric element, a spring element, a mass element, and at least one stop. The piezoelectric element, the spring element, and the mass element form a system which can oscillate. The stop limits the oscillation of the system which can oscillate, at least on one side. The stop is formed from a ductile material or has a coating of a ductile material.
摘要:
A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要:
A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.
摘要:
A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要:
A method for producing a component with at least one micro-structured or nano-structured element includes applying at least one micro-structured or nano-structured element to a carrier. The element has at least one area configure to make contact and the element is applied to the carrier such that the at least one area adjoins the carrier. The element is enveloped in an enveloping compound and the element-enveloping compound composite is detached from the carrier. A first layer comprising electrically conductive areas is applied to the side of the element-enveloping compound composite that previously adjoined the carrier. At least one passage is introduced into the enveloping compound. A conductor layer is applied to the surface of the passage and at least to a section of the layer comprising the first electrically conductive areas to generate a through contact, which enables space-saving contacting. A component is formed from the method.