Abstract:
A laser device according to an aspect of the present disclosure includes a chamber into which laser gas is introduced; a pair of electrodes arranged in the chamber; a power source configured to apply a voltage between the electrodes; a nozzle structure which includes an internal passage for receiving the laser gas and a slit connected to the internal passage and is configured to generate flow of the laser gas between the electrodes due to the laser gas blowing out from the slit; a gas flow path which has a suction port through which the laser gas in the chamber is suctioned and introduces, to the nozzle structure, the laser gas suctioned through the suction port; and a blower device configured to cause the laser gas to blow toward the internal passage of the nozzle structure through the gas flow path.
Abstract:
There is provided a laser unit that may include: a master oscillator configured to output a linear-polarized laser light beam; a first polarization device disposed in a light path of the linear-polarized laser light beam and provided with a polarization axis substantially aligned with a polarization direction of the linearly-polarized incident laser light beam; a second polarization device disposed in the light path of the linear-polarized laser light beam and provided with a polarization axis substantially aligned with a direction of the polarization axis of the first polarization device; and a laser amplifier disposed between the first polarization device and the second polarization device in the light path of the linear-polarized laser light beam and including a pair of discharge electrodes disposed to oppose each other, an opposing direction of the pair of discharge electrodes being substantially aligned with the direction of the polarization axis of the first polarization device.
Abstract:
A system includes a chamber, a laser beam apparatus configured to generate a laser beam to be introduced into the chamber, a laser controller for the laser beam apparatus to control at least a beam intensity and an output timing of the laser beam, and a target supply unit configured to supply a target material into the chamber, the target material being irradiated with the laser beam for generating extreme ultraviolet light.
Abstract:
A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.
Abstract:
A cleaning method for an EUV light generation apparatus may include closing a connection portion so that a chamber interior and the interior of an exposure apparatus do not communicate when EUV light is not being generated, supplying an etchant gas for etching debris that has accumulated on a reflective surface of an optical element to the chamber interior in a state where the connection portion is closed, and exhausting the chamber interior using an exhaust apparatus while supplying the etchant gas.
Abstract:
An apparatus used with a laser apparatus may include a chamber, a target supply for supplying a target material to a region inside the chamber, a laser beam focusing optical system for focusing a laser beam from the laser apparatus in the region, and an optical system for controlling a beam intensity distribution of the laser beam.
Abstract:
Included are a laser light source (10) configured to output pulsed laser light with an intensity peak in a wavelength range from 8 μm to 11 μm and a pulse width of 30 ns or less, an optical system (40) configured to condense the pulsed laser light toward a workpiece (70) and allow the workpiece to be irradiated with the condensed pulsed laser light, and a controller (60) configured to control a repetition frequency of the pulsed laser light that is to be outputted from the laser light source (10) to be 25 kHz or greater. This suppresses thermal diffusion and increases an absorption coefficient of a laser irradiated part of the workpiece (70), and suppresses a formed hole from being in a tapered shape and suppresses formation of uplifting around the hole upon performing of minute drilling.
Abstract:
A target supply apparatus mounted in a chamber in which extreme ultraviolet light is generated by introducing a target material and a laser beam into the chamber may include a target generator having a nozzle, a first pipe configured to cover the nozzle, a cover opening provided in the first pipe to allow the target material to pass through the first pipe, and a first valve configured to open and close the cover opening.