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    Nanowire formation methods
    11.
    发明授权
    Nanowire formation methods 有权

    公开(公告)号：US10290768B2

    公开(公告)日：2019-05-14

    申请号：US15704982

    申请日：2017-09-14

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa Banna ,  Deepak Nayak

    IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/24

    Abstract: Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming trenches having a v-shaped bottom through an oxide layer and a portion of a substrate; forming AlN or GaAs in the v-shaped bottom; forming a n-GaN or n-InGaP pillar on the AlN or GaAs through and above the first oxide layer; forming an InGaN/GaN MQW or AlInGaP/InGaP MQW over the n-GaN or n-InGaP pillar; forming a p-GaN or p-InGaP layer over the n-GaN pillar and InGaN/GaN MQW or the n-InGaP pillar and AlInGaP/InGaP MQW down to the first oxide layer; forming a TCO layer over the first oxide layer and the p-GaN or p-InGaP layer; forming a second oxide layer over the TCO layer; and forming a metal pad on the TCO layer above each n-GaN or n-InGaP pillar.

    Methods to form merged spacers for use in fin generation in IC devices
    13.
    发明授权
    Methods to form merged spacers for use in fin generation in IC devices 有权

    公开(公告)号：US09627389B1

    公开(公告)日：2017-04-18

    申请号：US15003304

    申请日：2016-01-21

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Youngtag Woo ,  Lei Yuan ,  Srinivasa Banna

    IPC: H01L21/311 ,  H01L27/11 ,  H01L29/66

    CPC classification number: H01L27/1104 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

    Abstract: Methods to utilize efficient processes to form and use merged spacers in fin generation and the resulting devices are disclosed. Embodiments include providing mandrels separated from each other across two adjacent bit-cells on an upper surface of a dielectric layer on an upper surface of a silicon (Si) layer; forming first spacers on opposite sides of each mandrel; forming second spacers on exposed sides of the first spacers; removing the mandrels; removing exposed sections of the dielectric layer; removing the first and second spacers; forming fin-spacers on opposite sides of remaining sections of the dielectric layer; removing the remaining sections of the dielectric layer; removing exposed sections of the Si layer; and removing the fin-spacers to reveal Si fins.

    FinFETs for light emitting diode displays
    14.
    发明授权
    FinFETs for light emitting diode displays 有权

    公开(公告)号：US10396121B2

    公开(公告)日：2019-08-27

    申请号：US15680948

    申请日：2017-08-18

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Ajey P. Jacob ,  Srinivasa Banna ,  Deepak Nayak

    IPC: H01L27/15 ,  H01L33/06 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/60 ,  H01L33/50 ,  H01L29/78

    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs for light emitting diode displays and methods of manufacture. The method includes: forming replacement fin structures with a doped core region, on doped substrate material; forming quantum wells over the replacement fin structures; forming a first color emitting region by doping at least one of the quantum wells over at least a first replacement fin structure of the replacement fin structures, while protecting at least a second replacement fin structure of the replacement fin structures; and forming a second color emitting region by doping another one of the quantum wells over the at least second replacement fin structure of the replacement fin structures, while protecting the first replacement fin structure and other replacement fin structures which are not to be doped.

    Method of manufacturing a 3 color LED integrated Si CMOS driver wafer using die to wafer bonding approach
    16.
    发明授权
    Method of manufacturing a 3 color LED integrated Si CMOS driver wafer using die to wafer bonding approach 有权

    公开(公告)号：US10193011B1

    公开(公告)日：2019-01-29

    申请号：US15650427

    申请日：2017-07-14

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa Banna ,  Deepak Nayak ,  Luke England ,  Rahul Agarwal

    IPC: H01L27/30 ,  H01L31/18 ,  H01L27/15

    Abstract: Methods of forming an integrated RGB LED and Si CMOS driver wafer and the resulting devices are provided. Embodiments include providing a plurality of first color die over a CMOS wafer, each first color die being laterally separated with a first oxide and electrically connected to the CMOS wafer; providing a second color die above each first color die, each second color die being separated from each other with a second oxide, bonded to a first color die, and electrically connected to the CMOS wafer through the bonded first color die; removing a portion of each second color die to expose a portion of each bonded first color die; forming a conformal TCO layer over each first and second color die and on a side surface of each second color die and oxide; forming a PECVD oxide layer over the CMOS wafer; and planarizing the PECVD oxide layer.

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