公开(公告)号：US20230317869A1

公开(公告)日：2023-10-05

申请号：US17709181

申请日：2022-03-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran Krishnasamy ,  John J. Ellis-Monaghan ,  Siva P. Adusumilli ,  Ramsey Hazbun ,  Steven M. Shank

IPC: H01L31/105 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/1812

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and methods of manufacture. The structure includes: a top terminal; an intrinsic material in contact with the top terminal; and a bottom terminal in contact with the intrinsic material, the bottom terminal including a P semiconductor material and a fully depleted N semiconductor material.

公开(公告)号：US11664470B2

公开(公告)日：2023-05-30

申请号：US17863922

申请日：2022-07-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran Krishnasamy ,  Steven M. Shank ,  John J. Ellis-Monaghan ,  Ramsey Hazbun

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/028

CPC classification number: H01L31/035281 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1808

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

公开(公告)号：US11569170B2

公开(公告)日：2023-01-31

申请号：US17064602

申请日：2020-10-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. Adusumilli ,  Mark David Levy ,  Ramsey Hazbun ,  Alvin Joseph ,  Steven Bentley

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/768 ,  H01L23/367 ,  H01L23/48 ,  H01L29/10 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/778 ,  H01L29/735

Abstract: A semiconductor device is provided, the semiconductor device comprising a substrate having merged cavities in the substrate. An active region is over the merged cavities in the substrate. A thermally conductive layer is in the merged cavities in the substrate, whereby the thermally conductive layer at least partially fills up the merged cavities in the substrate. A first contact pillar connects the thermally conductive layer in the merged cavities in the substrate with a metallization layer above the active region.

公开(公告)号：US20250054908A1

公开(公告)日：2025-02-13

申请号：US18232876

申请日：2023-08-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett Cucci ,  Ramsey Hazbun ,  Richard Rassel ,  Zhong-Xiang He ,  Patrick Mitchell

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/48

Abstract: Structures including a compound semiconductor layer stack and methods of forming such structures. The structure comprises a device region on a substrate. The device region includes a first section of a layer stack that has a plurality of semiconductor layers, and each semiconductor layer comprises a compound semiconductor material. The structure further comprises an isolation structure disposed about the section of the layer stack, and a device in the device region. The isolation structure penetrates through the layer stack to the substrate.

公开(公告)号：US12040252B2

公开(公告)日：2024-07-16

申请号：US17858660

申请日：2022-07-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey Hazbun ,  Cameron Luce ,  Siva P. Adusumilli ,  Mark Levy

IPC: H01L23/473 ,  H01L21/762 ,  H01L23/367 ,  H01L29/51

CPC classification number: H01L23/473 ,  H01L21/76229 ,  H01L23/367 ,  H01L29/515

Abstract: Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a trench in a semiconductor substrate and a semiconductor layer inside the trench. The trench has an entrance and a sidewall extending from the entrance into the semiconductor substrate. The semiconductor layer has a first portion surrounding a portion of the trench to define a cavity and a second portion positioned to obstruct the entrance to the trench. The second portion of the semiconductor layer is thicker than the first portion of the semiconductor layer.

公开(公告)号：US20230223254A1

公开(公告)日：2023-07-13

申请号：US17571932

申请日：2022-01-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey Hazbun ,  Mark Levy ,  Alvin Joseph ,  Siva P. Adusumilli

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/20 ,  H01L27/085 ,  H01L21/762

CPC classification number: H01L21/0243 ,  H01L21/02381 ,  H01L21/76224 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/66462 ,  H01L21/02433

Abstract: Structures including a compound-semiconductor-based device and a silicon-based device integrated on a semiconductor substrate and methods of forming such structures. The structure includes a first semiconductor layer having a top surface and a faceted surface that fully surrounds the top surface. The top surface has a first surface normal, and the faceted surface has a second surface normal that is inclined relative to the first surface normal. A layer stack that includes second semiconductor layers is positioned on the faceted surface of the first semiconductor layer. Each of the second semiconductor layers contains a compound semiconductor material. A silicon-based device is located on the top surface of the first semiconductor layer, and a compound-semiconductor-based device is located on the layer stack.

公开(公告)号：US11424377B2

公开(公告)日：2022-08-23

申请号：US17065862

申请日：2020-10-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran Krishnasamy ,  Steven M. Shank ,  John J. Ellis-Monaghan ,  Ramsey Hazbun

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/028

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

公开(公告)号：US11322639B2

公开(公告)日：2022-05-03

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. Levy ,  Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Vibhor Jain ,  Ramsey Hazbun ,  Pernell Dongmo ,  Cameron E. Luce ,  Steven M. Shank ,  Rajendran Krishnasamy

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0376

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.

公开(公告)号：US11195925B2

公开(公告)日：2021-12-07

申请号：US16732755

申请日：2020-01-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Judson R. Holt ,  Vibhor Jain ,  Qizhi Liu ,  Ramsey Hazbun ,  Pernell Dongmo ,  John J. Pekarik ,  Cameron E. Luce

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/08 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the sub-collector region, the collector region composed of semiconductor material; an intrinsic base region composed of intrinsic base material surrounded by the semiconductor material above the collector region; and an emitter region above the intrinsic base region.

公开(公告)号：US11949034B2

公开(公告)日：2024-04-02

申请号：US17849285

申请日：2022-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Siva P. Adusumilli ,  Ramsey Hazbun

IPC: H01L31/105 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/105 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/0216

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.