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503 条记录 (耗时 0.047 秒)

    Methods of forming patterned photoresist layers over semiconductor substrates
    11.
    发明申请
    Methods of forming patterned photoresist layers over semiconductor substrates 有权
    在半导体衬底上形成图案化光致抗蚀剂层的方法

    公开(公告)号：US20050287816A1

    公开(公告)日：2005-12-29

    申请号：US10879367

    申请日：2004-06-28

    申请人： Guy Blalock ,  Gurtej Sandhu ,  Jon Daley

    发明人： Guy Blalock ,  Gurtej Sandhu ,  Jon Daley

    IPC分类号： G03F7/09 ,  H01L21/027 ,  H01L21/31 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： G03F7/091 ,  H01L21/0276

    摘要： This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the fluid therein. The positive photoresist is patterned and developed to form a patterned photoresist layer, with the fluid within the pores being effective to reduce photoresist footing in the patterned photoresist layer than would otherwise occur in the absence of the fluid within the pores. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括在半导体衬底上形成图案化光致抗蚀剂层的方法。 在一个实施方案中，在半导体衬底上形成多孔抗反射涂层。 在多孔抗反射涂层的孔内提供光致抗蚀剂页脚还原液。 在其中具有流体的多孔抗反射涂层上形成正性光致抗蚀剂。 正性光致抗蚀剂被图案化和显影以形成图案化的光致抗蚀剂层，孔内的流体有效地减少图案化光致抗蚀剂层中的光致抗蚀剂底脚，而不是在孔内不存在流体的情况下发生。 考虑了其他方面和实现。

    Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
    12.
    发明申请
    Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon 有权
    形成反应产物的方法和通过金属与硅的反应形成导电金属硅化物的方法

    公开(公告)号：US20050227487A1

    公开(公告)日：2005-10-13

    申请号：US10822118

    申请日：2004-04-08

    申请人： Gurtej Sandhu ,  Guy Blalock

    发明人： Gurtej Sandhu ,  Guy Blalock

    IPC分类号： C23C14/58 ,  H01L21/20 ,  H01L21/285

    CPC分类号： C23C14/5826 ,  H01L21/28512 ,  H01L21/28518

    摘要： A method of forming a reaction product includes providing a semiconductor substrate comprising a first material. A second material is formed over the first material. The first and second materials are of different compositions, and are proximate one another at an interface. The first and second materials as being proximate one another at the interface are capable of reacting with one another at some minimum reaction temperature when in an inert non-plasma atmosphere at a pressure. The interface is provided at a processing temperature which is at least 50° C. below the minimum reaction temperature, and is provided at the pressure. With the interface at the processing temperature and at the pressure, the substrate is exposed to a plasma effective to impart a reaction of the first material with the second material to form a reaction product third material of the first and second materials over the first material. Other aspects and implementations are contemplated.

    摘要翻译： 形成反应产物的方法包括提供包含第一材料的半导体衬底。 在第一材料上形成第二材料。 第一和第二材料具有不同的组成，并且在界面处彼此靠近。 在惰性非等离子体气氛中在压力下，在界面处彼此接近的第一和第二材料能够在某些最小反应温度下彼此反应。 界面的设置处于低于最低反应温度的至少50℃的处理温度，并且在压力下提供。 利用处理温度和压力下的界面，将基板暴露于等离子体中，以有效地使第一材料与第二材料发生反应，从而在第一材料上形成第一和第二材料的反应产物第三材料。 考虑了其他方面和实现。

    Deposition methods and apparatuses providing surface activation
    13.
    发明申请
    Deposition methods and apparatuses providing surface activation 审中-公开

    公开(公告)号：US20060183322A1

    公开(公告)日：2006-08-17

    申请号：US11394971

    申请日：2006-03-30

    申请人： Gurtej Sandhu ,  Garo Derderian ,  Guy Blalock ,  Terry Gilton

    发明人： Gurtej Sandhu ,  Garo Derderian ,  Guy Blalock ,  Terry Gilton

    IPC分类号： H01L21/44

    CPC分类号： C23C16/45544 ,  C23C16/44 ,  C23C16/45527 ,  C23C16/45534 ,  C30B25/02 ,  C30B25/18

    摘要： A deposition method includes, at a first temperature, contacting a substrate with a surface activation agent and adsorbing a first layer over the substrate. At a second temperature greater than the first temperature, the first layer may be contacted with a first precursor, chemisorbing a second layer at least one monolayer thick over the substrate. The first layer may enhance a chemisorption rate of the first precursor compared to the substrate without the surface activation agent adsorbed thereon. One deposition apparatus includes a deposition chamber with a precursor gas dispenser in a contacting zone and a cooling gas dispenser in a cooling zone. A substrate chuck moves by linear translational motion from the contacting zone to the cooling zone. The substrate chuck includes a substrate lift that positions a deposition substrate at an elevation above a heated surface of the substrate chuck when dispensing a cooling gas or surface activation agent. Another deposition apparatus includes a cooling chamber with a cooled substrate chuck and a contacting chamber with a heated substrate chuck. The contacting chamber also has a precursor gas dispenser and the heated substrate chuck includes a substrate lift. A robotic substrate handler moves a substrate from the cooled substrate chuck to the heated substrate chuck.

    Semiconductor constructions
    16.
    发明申请
    Semiconductor constructions 有权
    半导体结构

    公开(公告)号：US20050121794A1

    公开(公告)日：2005-06-09

    申请号：US11026822

    申请日：2004-12-29

    申请人： Werner Juengling ,  Kirk Prall ,  Ravi Iyer ,  Gurtej Sandhu ,  Guy Blalock

    发明人： Werner Juengling ,  Kirk Prall ,  Ravi Iyer ,  Gurtej Sandhu ,  Guy Blalock

    IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

    CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

    摘要翻译： 本发明包括在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

    Resistive heater for thermo optic device
    18.
    发明申请
    Resistive heater for thermo optic device 有权
    用于热光器件的电阻加热器

    公开(公告)号：US20050025424A1

    公开(公告)日：2005-02-03

    申请号：US10929904

    申请日：2004-08-30

    申请人： Gurtej Sandhu ,  Guy Blalock

    发明人： Gurtej Sandhu ,  Guy Blalock

    IPC分类号： G02F1/01 ,  G02F1/225 ,  G02B6/34

    CPC分类号： G02B6/125 ,  G02F1/0102 ,  G02F1/0147 ,  G02F1/2257 ,  G02F2201/30 ,  G02F2201/307 ,  G02F2202/104

    摘要： Resistive heaters formed in two mask counts on a surface of a grating of a thermo optic device thereby eliminating one mask count from prior art manufacturing methods. The resistive heater is comprised of a heater region and a conductive path region formed together in a first mask count from a relatively high resistance material. A conductor formed from a relatively low resistance material is formed directly on the conductive path region in a second mask count. Thermo optic devices formed by these two mask count methods are also described.

    摘要翻译： 在热光器件的光栅的表面上形成两个掩模计数的电阻加热器，从而从现有技术的制造方法中消除一个掩模计数。 电阻加热器包括加热器区域和形成在来自相对高电阻材料的第一掩模计数中的导电路径区域。 由相对低电阻材料形成的导体以第二掩模计数直接形成在导电路径区域上。 还描述了通过这两种掩模计数方法形成的热光学器件。

    Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
    19.
    发明申请
    Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon 有权

    公开(公告)号：US20060258154A1

    公开(公告)日：2006-11-16

    申请号：US11488579

    申请日：2006-07-17

    申请人： Gurtej Sandhu ,  Guy Blalock

    发明人： Gurtej Sandhu ,  Guy Blalock

    IPC分类号： H01L21/4763

    CPC分类号： C23C14/5826 ,  H01L21/28512 ,  H01L21/28518

    摘要： A method of forming a reaction product includes providing a semiconductor substrate comprising a first material. A second material is formed over the first material. The first and second materials are of different compositions, and are proximate one another at an interface. The first and second materials as being proximate one another at the interface are capable of reacting with one another at some minimum reaction temperature when in an inert non-plasma atmosphere at a pressure. The interface is provided at a processing temperature which is at least 50° C. below the minimum reaction temperature, and is provided at the pressure. With the interface at the processing temperature and at the pressure, the substrate is exposed to a plasma effective to impart a reaction of the first material with the second material to form a reaction product third material of the first and second materials over the first material. Other aspects and implementations are contemplated.

    Methods of forming patterned photoresist layers over semiconductor substrates
    20.
    发明申请
    Methods of forming patterned photoresist layers over semiconductor substrates 有权
    在半导体衬底上形成图案化光致抗蚀剂层的方法

    公开(公告)号：US20060246734A1

    公开(公告)日：2006-11-02

    申请号：US11477287

    申请日：2006-06-28

    申请人： Guy Blalock ,  Gurtej Sandhu ,  Jon Daley

    发明人： Guy Blalock ,  Gurtej Sandhu ,  Jon Daley

    IPC分类号： H01L21/302 ,  H01L21/31 ,  H01L21/4763 ,  G03C5/00

    CPC分类号： G03F7/091 ,  H01L21/0276

    摘要： This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the fluid therein. The positive photoresist is patterned and developed to form a patterned photoresist layer, with the fluid within the pores being effective to reduce photoresist footing in the patterned photoresist layer than would otherwise occur in the absence of the fluid within the pores. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括在半导体衬底上形成图案化光致抗蚀剂层的方法。 在一个实施方案中，在半导体衬底上形成多孔抗反射涂层。 在多孔抗反射涂层的孔内提供光致抗蚀剂页脚还原液。 在其中具有流体的多孔抗反射涂层上形成正性光致抗蚀剂。 正性光致抗蚀剂被图案化和显影以形成图案化的光致抗蚀剂层，孔内的流体有效地减少图案化光致抗蚀剂层中的光致抗蚀剂底脚，而不是在孔内不存在流体的情况下发生。 考虑了其他方面和实现。