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公开(公告)号：US20070025172A1
公开(公告)日：2007-02-01
申请号：US11494748
申请日：2006-07-28
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C11/40603 , G11C2211/4061
摘要： A memory allowing reduction of the period of an external access operation is provided. This memory comprises an access control portion performing an internal access operation on the basis of an external access operation, a refresh control portion performing a refresh operation and a refresh division control portion dividing the refresh operation into a read operation RFRD and rewrite operations RFRS1 and RFRS2. The memory performs the read operation RFRD and the rewrite operations RFRS1 and RFRS2 at least either before or after different internal access operations corresponding to different external access operations respectively.
摘要翻译： 提供了允许减少外部访问操作的周期的存储器。 该存储器包括访问控制部分，其基于外部访问操作执行内部访问操作，执行刷新操作的刷新控制部分和将刷新操作分为读取操作RFRD和重写操作RFRS 1的刷新分配控制部分，以及 RFRS 2.存储器分别在对应于不同外部访问操作的不同内部访问操作之前或之后至少执行读取操作RFRD和重写操作RFRS 1和RFRS 2。
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公开(公告)号：US06977402B2
公开(公告)日：2005-12-20
申请号：US10802786
申请日：2004-03-18
IPC分类号： H01L27/105 , G11C11/15 , G11C11/22 , H01L21/02 , H01L21/82 , H01L21/8246 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on average, a second electrode film formed on the storage part of the storage material film. The thickness of the thin-film part may be between 15% and 95% of the thickness of the storage part. An insulator film may be formed on the thin-film part and the second electrode part, the insulator film formed on the thin-film part having a same pattern as the thin-film part.
摘要翻译： 存储器包括：第一电极膜，形成在第一电极膜上的存储材料膜，设置有存储部分和具有小于存储部分的厚度的厚度的薄膜部分，并且其厚度小于存储部分的厚度的至少约15％ 平均存储部分的厚度，形成在存储材料膜的存储部分上的第二电极膜。 薄膜部分的厚度可以在存储部件的厚度的15％至95％之间。 可以在薄膜部分和第二电极部分上形成绝缘体膜，在薄膜部分上形成的绝缘膜具有与薄膜部分相同的图案。
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公开(公告)号：US06891742B2
公开(公告)日：2005-05-10
申请号：US10480247
申请日：2002-07-12
申请人： Yoh Takano , Shigeharu Matsushita
发明人： Yoh Takano , Shigeharu Matsushita
IPC分类号： G11C11/00 , H01L27/02 , H01L27/105 , H01L27/11 , H01L27/112 , H01L27/115 , H01L27/22 , H01L45/00 , G11C11/22
CPC分类号： H01L27/0207 , G11C11/005 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1116 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11502 , H01L27/11509 , H01L27/228 , H01L27/24
摘要： A semiconductor memory device having a first memory including a bit line, a word line arranged to intersect with the bit line and a storage unit arranged between the bit line and the word line, and a second memory different in type from the first memory. The first memory and the second memory are formed on a semiconductor substrate in a stacked manner reducing the thickness in the height direction and attaining further miniaturization (thinning). Further, no wire having a large parasitic capacitance or solder is employed for connecting the first memory and the second memory, thereby enabling high-speed data transfer between the first memory and the second memory.
摘要翻译： 一种具有第一存储器的半导体存储器件，包括位线，布置成与位线交叉的字线和布置在位线和字线之间的存储单元，以及与第一存储器不同类型的第二存储器。 第一存储器和第二存储器以堆叠的方式形成在半导体衬底上，从而减小了高度方向的厚度并进一步小型化（变薄）。 此外，没有使用具有大的寄生电容或焊料的电线来连接第一存储器和第二存储器，从而使得能够在第一存储器和第二存储器之间进行高速数据传送。
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公开(公告)号：US5982023A
公开(公告)日：1999-11-09
申请号：US951160
申请日：1997-10-15
申请人： Shigeharu Matsushita , Emi Fujii , Daijiro Inoue
发明人： Shigeharu Matsushita , Emi Fujii , Daijiro Inoue
IPC分类号： H01L21/285 , H01L21/338 , H01L21/76 , H01L29/812 , H01L29/06 , H01L29/80 , H01L31/0328
CPC分类号： H01L29/66871 , H01L21/28587 , H01L21/7605 , H01L29/812
摘要： A dummy gate is removed together with an SiO.sub.2 film thereon by lift-off to form a reverse dummy-gate pattern with the SiO.sub.2 film. A photoresist pattern is formed to cover the reverse dummy-gate pattern and an SiN protection film therebetween, and a mesa pattern is formed by mesa etching. The photoresist pattern is etched so that the edge of the photoresist pattern is located between the edge of the mesa pattern and the edge of the reverse dummy-gate pattern and the exposed part of the SiN protection film is etched. The edge of the SiN protection film is thus located inside the edge of the mesa pattern.
摘要翻译： 通过剥离将虚拟栅极与其上的SiO 2膜一起除去，以形成具有SiO 2膜的反虚拟栅极图案。 形成光致抗蚀剂图案以覆盖其间的反虚拟栅极图案和SiN保护膜，并且通过台面蚀刻形成台面图案。 蚀刻光致抗蚀剂图案，使得光致抗蚀剂图案的边缘位于台面图案的边缘和反虚拟栅极图案的边缘之间，并且SiN保护膜的暴露部分被蚀刻。 因此，SiN保护膜的边缘位于台面图案的边缘内。
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公开(公告)号：US20060063279A1
公开(公告)日：2006-03-23
申请号：US11260243
申请日：2005-10-28
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.
摘要翻译： 提供一种制造能够提高从存储单元读取的信号的强度的存储器的方法。 这种制造存储器的方法包括以下步骤：通过将形成在第一电极膜上的存储材料膜部分地蚀刻预定厚度来形成存储部分和蚀刻的薄膜部分，形成绝缘膜以至少覆盖薄膜 部分储存材料膜，并通过在绝缘膜的规定区域上形成蚀刻掩模，然后蚀刻绝缘膜和存储材料的薄膜部分来对绝缘膜和存储材料膜的薄膜部分进行图案化 材料膜通过蚀刻掩模。
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16.发明授权Dielectric element including oxide dielectric film and method of manufacturing the same 有权包含氧化物介电膜的电介质元件及其制造方法公开(公告)号：US06762476B2
公开(公告)日：2004-07-13
申请号：US10060260
申请日：2002-02-01
IPC分类号： H01L2900
摘要： A dielectric element capable of attaining excellent element characteristics by suppressing an oxide dielectric film from deterioration of characteristics caused by hydrogen is obtained. This dielectric element comprises a lower electrode including a first conductor film containing a metal, silicon and nitrogen, a first insulator film including the oxide dielectric film and an upper electrode including a second conductor film containing the metal, silicon and nitrogen, while the metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. According to this structure, the first conductor film and the second conductor film function as barrier films preventing diffusion of hydrogen. Consequently, the first conductor film and the second conductor film suppress hydrogen from diffusing into the oxide dielectric film. Thus, the oxide dielectric film is prevented from deterioration of characteristics.
摘要翻译： 获得能够通过抑制氧化物电介质膜由氢引起的特性劣化而获得优异元素特性的电介质元件。 该电介质元件包括下电极，其包括含有金属，硅和氮的第一导体膜，包括氧化物电介质膜的第一绝缘膜和包括含有金属，硅和氮的第二导体膜的上电极，而金属包括 选自由Ir，Pt，Ru，Re，Ni，Co和Mo组成的组中的至少一种金属。根据该结构，第一导体膜和第二导体膜用作阻止氢扩散的阻挡膜。 因此，第一导体膜和第二导体膜抑制氢扩散到氧化物介电膜中。 因此，防止了氧化物介电膜的特性劣化。
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公开(公告)号：US07297559B2
公开(公告)日：2007-11-20
申请号：US11260243
申请日：2005-10-28
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.
摘要翻译： 提供一种制造能够提高从存储单元读取的信号的强度的存储器的方法。 这种制造存储器的方法包括以下步骤：通过将形成在第一电极膜上的存储材料膜部分地蚀刻预定厚度来形成存储部分和蚀刻的薄膜部分，形成绝缘膜以至少覆盖薄膜 部分储存材料膜，并通过在绝缘膜的规定区域上形成蚀刻掩模，然后蚀刻绝缘膜和存储材料的薄膜部分来对绝缘膜和存储材料膜的薄膜部分进行图案化 材料膜通过蚀刻掩模。
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18.发明授权Dielectric element including oxide-based dielectric film and method of fabricating the same 有权包含氧化物基电介质膜的电介质元件及其制造方法公开(公告)号：US06888189B2
公开(公告)日：2005-05-03
申请号：US09956817
申请日：2001-09-21
IPC分类号： H01L27/105 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/8242 , H01L21/8246 , H01L27/108 , H10L27/108
CPC分类号： H01L21/0217 , H01L21/02126 , H01L21/0214 , H01L21/02178 , H01L21/02186 , H01L21/02197 , H01L21/3144 , H01L21/31604 , H01L21/3162 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L28/55 , H01L28/75
摘要： A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.
摘要翻译： 得到能够有效地抑制氧化物系电介质膜烧结的热处理中的氧扩散到位于下部电极下方的区域的电介质元件。 该电介质元件包括下电极，该下电极包括具有抑制氧扩散功能的第一导体膜，形成在下电极上的包括氧化物类电介质膜的第一电介质膜和布置在区域上的第一绝缘膜 除了下部电极之外，具有抑制氧的扩散的功能。 因此，第一导体膜和第一绝缘膜用作防止氧扩散的阻挡膜，由此第一导体膜有效地防止氧沿着下电极的晶界向下扩散，而第一绝缘膜有效地防止氧向下扩散 在用于烧结氧化物基电介质膜的热处理中除下电极之外的区域。
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19.发明授权公开(公告)号：US06617660B2
公开(公告)日：2003-09-09
申请号：US09391507
申请日：1999-09-08
IPC分类号： H01L29095
CPC分类号： H01L29/66871 , H01L21/28587 , H01L29/42316 , H01L29/812
摘要： This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor semiconductor of this invention comprises a source/drain electrode 6 positioned in a predetermined position in a GaAs substrate 1, a channel region provided in the GaAs substrate 1 and between the source/drain electrodes 6, a gate electrode 11 which is in schottky contact with a part of a channel region and is positioned between the source/drain electrodes 6, and an insulating film 7 which electrically insulates a surface of the GaAs substrate and the gate electrode 11 at both side surfaces of the gate electrode 11. The gate electrode 11 covers a part of the insulating film 7 and the surface of the GaAs substrate serving as the channel region, and a bottom metallic layer 8 contained in the gate electrode 11 is covered with a second metallic layer 9 which is highly adhesive to the insulating film 7.
摘要翻译： 本发明的目的是提供一种场效应晶体管半导体，其在栅极金属和限定栅电极端的绝缘膜之间具有很大的粘合性，并提高其生产成品率。本发明的场效应晶体管半导体包括源极/漏极 6位于GaAs衬底1中的预定位置，设置在GaAs衬底1中并在源/漏电极6之间的沟道区，与沟道区的一部分肖特基接触并位于 源极/漏极6以及绝缘膜7，其将栅极电极11的两个侧表面处的GaAs衬底的表面和栅极电极11电绝缘。栅电极11覆盖绝缘膜7的一部分，并且 作为沟道区的GaAs衬底的表面和包含在栅极11中的底部金属层8被第二个元件覆盖 与绝缘膜7高度粘合的层9。
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公开(公告)号：US07440307B2
公开(公告)日：2008-10-21
申请号：US11584491
申请日：2006-10-23
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223 , G11C11/5657
摘要： This memory comprises a bit line, a first word line and a second word line arranged to intersect with the bit line while holding the bit line therebetween and a first ferroelectric film and a second ferroelectric film, having capacitances different from each other, arranged between the bit line and the first word line and between the bit line and the second word line respectively at least on a region where the bit line and the first and second word lines intersect with each other. The bit line, the first word line and the first ferroelectric film constitute a first ferroelectric capacitor while the bit line, the second word line and the second ferroelectric film constitute a second ferroelectric capacitor, and the first ferroelectric capacitor and the second ferroelectric capacitor constitute a memory cell.
摘要翻译： 该存储器包括位线，第一字线和第二字线，其被布置成在保持位线之间与位线相交并且具有电容彼此不同的第一铁电体膜和第二铁电体膜，第一铁电体膜和第二铁电体膜布置在 至少在位线和第一和第二字线彼此相交的区域上分别位于第一字线和第一字线之间以及位线与第二字线之间。 位线，第一字线和第一铁电体膜构成第一铁电电容器，而位线，第二字线和第二铁电体膜构成第二铁电电容器，并且第一铁电电容器和第二铁电电容器构成 记忆单元
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