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公开(公告)号：US06977402B2
公开(公告)日：2005-12-20
申请号：US10802786
申请日：2004-03-18
IPC分类号： H01L27/105 , G11C11/15 , G11C11/22 , H01L21/02 , H01L21/82 , H01L21/8246 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on average, a second electrode film formed on the storage part of the storage material film. The thickness of the thin-film part may be between 15% and 95% of the thickness of the storage part. An insulator film may be formed on the thin-film part and the second electrode part, the insulator film formed on the thin-film part having a same pattern as the thin-film part.
摘要翻译： 存储器包括：第一电极膜，形成在第一电极膜上的存储材料膜，设置有存储部分和具有小于存储部分的厚度的厚度的薄膜部分，并且其厚度小于存储部分的厚度的至少约15％ 平均存储部分的厚度，形成在存储材料膜的存储部分上的第二电极膜。 薄膜部分的厚度可以在存储部件的厚度的15％至95％之间。 可以在薄膜部分和第二电极部分上形成绝缘体膜，在薄膜部分上形成的绝缘膜具有与薄膜部分相同的图案。
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公开(公告)号：US20060063279A1
公开(公告)日：2006-03-23
申请号：US11260243
申请日：2005-10-28
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.
摘要翻译： 提供一种制造能够提高从存储单元读取的信号的强度的存储器的方法。 这种制造存储器的方法包括以下步骤：通过将形成在第一电极膜上的存储材料膜部分地蚀刻预定厚度来形成存储部分和蚀刻的薄膜部分，形成绝缘膜以至少覆盖薄膜 部分储存材料膜，并通过在绝缘膜的规定区域上形成蚀刻掩模，然后蚀刻绝缘膜和存储材料的薄膜部分来对绝缘膜和存储材料膜的薄膜部分进行图案化 材料膜通过蚀刻掩模。
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公开(公告)号：US07297559B2
公开(公告)日：2007-11-20
申请号：US11260243
申请日：2005-10-28
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.
摘要翻译： 提供一种制造能够提高从存储单元读取的信号的强度的存储器的方法。 这种制造存储器的方法包括以下步骤：通过将形成在第一电极膜上的存储材料膜部分地蚀刻预定厚度来形成存储部分和蚀刻的薄膜部分，形成绝缘膜以至少覆盖薄膜 部分储存材料膜，并通过在绝缘膜的规定区域上形成蚀刻掩模，然后蚀刻绝缘膜和存储材料的薄膜部分来对绝缘膜和存储材料膜的薄膜部分进行图案化 材料膜通过蚀刻掩模。
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4.发明授权Dielectric element including oxide-based dielectric film and method of fabricating the same 有权包含氧化物基电介质膜的电介质元件及其制造方法公开(公告)号：US06888189B2
公开(公告)日：2005-05-03
申请号：US09956817
申请日：2001-09-21
IPC分类号： H01L27/105 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/8242 , H01L21/8246 , H01L27/108 , H10L27/108
CPC分类号： H01L21/0217 , H01L21/02126 , H01L21/0214 , H01L21/02178 , H01L21/02186 , H01L21/02197 , H01L21/3144 , H01L21/31604 , H01L21/3162 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L28/55 , H01L28/75
摘要： A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.
摘要翻译： 得到能够有效地抑制氧化物系电介质膜烧结的热处理中的氧扩散到位于下部电极下方的区域的电介质元件。 该电介质元件包括下电极，该下电极包括具有抑制氧扩散功能的第一导体膜，形成在下电极上的包括氧化物类电介质膜的第一电介质膜和布置在区域上的第一绝缘膜 除了下部电极之外，具有抑制氧的扩散的功能。 因此，第一导体膜和第一绝缘膜用作防止氧扩散的阻挡膜，由此第一导体膜有效地防止氧沿着下电极的晶界向下扩散，而第一绝缘膜有效地防止氧向下扩散 在用于烧结氧化物基电介质膜的热处理中除下电极之外的区域。
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公开(公告)号：US07247900B2
公开(公告)日：2007-07-24
申请号：US10631858
申请日：2003-08-01
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L28/60 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L28/55
摘要： A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.
摘要翻译： 提供了具有优异特性的电介质器件。 该电介质器件包括这样的第一电极层，其表面上的构成元件被卤素原子封端，并且形成在由卤素原子终止的第一电极层的表面上的电介质膜。 为了形成具有铋层结构的铁电体膜，为了形成具有铋层结构的铁电体膜而将位于其表面上的第一电极层的构成元件端接，因此，阻止构成铁电体膜的Bi与位于 第一电极层的表面。
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公开(公告)号：US06891742B2
公开(公告)日：2005-05-10
申请号：US10480247
申请日：2002-07-12
申请人： Yoh Takano , Shigeharu Matsushita
发明人： Yoh Takano , Shigeharu Matsushita
IPC分类号： G11C11/00 , H01L27/02 , H01L27/105 , H01L27/11 , H01L27/112 , H01L27/115 , H01L27/22 , H01L45/00 , G11C11/22
CPC分类号： H01L27/0207 , G11C11/005 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/1116 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11502 , H01L27/11509 , H01L27/228 , H01L27/24
摘要： A semiconductor memory device having a first memory including a bit line, a word line arranged to intersect with the bit line and a storage unit arranged between the bit line and the word line, and a second memory different in type from the first memory. The first memory and the second memory are formed on a semiconductor substrate in a stacked manner reducing the thickness in the height direction and attaining further miniaturization (thinning). Further, no wire having a large parasitic capacitance or solder is employed for connecting the first memory and the second memory, thereby enabling high-speed data transfer between the first memory and the second memory.
摘要翻译： 一种具有第一存储器的半导体存储器件，包括位线，布置成与位线交叉的字线和布置在位线和字线之间的存储单元，以及与第一存储器不同类型的第二存储器。 第一存储器和第二存储器以堆叠的方式形成在半导体衬底上，从而减小了高度方向的厚度并进一步小型化（变薄）。 此外，没有使用具有大的寄生电容或焊料的电线来连接第一存储器和第二存储器，从而使得能够在第一存储器和第二存储器之间进行高速数据传送。
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公开(公告)号：US5982023A
公开(公告)日：1999-11-09
申请号：US951160
申请日：1997-10-15
申请人： Shigeharu Matsushita , Emi Fujii , Daijiro Inoue
发明人： Shigeharu Matsushita , Emi Fujii , Daijiro Inoue
IPC分类号： H01L21/285 , H01L21/338 , H01L21/76 , H01L29/812 , H01L29/06 , H01L29/80 , H01L31/0328
CPC分类号： H01L29/66871 , H01L21/28587 , H01L21/7605 , H01L29/812
摘要： A dummy gate is removed together with an SiO.sub.2 film thereon by lift-off to form a reverse dummy-gate pattern with the SiO.sub.2 film. A photoresist pattern is formed to cover the reverse dummy-gate pattern and an SiN protection film therebetween, and a mesa pattern is formed by mesa etching. The photoresist pattern is etched so that the edge of the photoresist pattern is located between the edge of the mesa pattern and the edge of the reverse dummy-gate pattern and the exposed part of the SiN protection film is etched. The edge of the SiN protection film is thus located inside the edge of the mesa pattern.
摘要翻译： 通过剥离将虚拟栅极与其上的SiO 2膜一起除去，以形成具有SiO 2膜的反虚拟栅极图案。 形成光致抗蚀剂图案以覆盖其间的反虚拟栅极图案和SiN保护膜，并且通过台面蚀刻形成台面图案。 蚀刻光致抗蚀剂图案，使得光致抗蚀剂图案的边缘位于台面图案的边缘和反虚拟栅极图案的边缘之间，并且SiN保护膜的暴露部分被蚀刻。 因此，SiN保护膜的边缘位于台面图案的边缘内。
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8.发明授权公开(公告)号：US07933161B2
公开(公告)日：2011-04-26
申请号：US11509057
申请日：2006-08-24
IPC分类号： G11C7/20
CPC分类号： G11C11/22
摘要： A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained. This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell. The refresh portion reads data from and rewrites data in the memory cell in a power-down state.
摘要翻译： 获得能够防止存储器单元从累积干扰导致的数据消失的存储器。 该存储器包括非易失性存储器单元和用于重写存储单元中的数据的刷新部分。 刷新部分在掉电状态下从存储器单元读取数据并重新写入数据。
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公开(公告)号：US07379323B2
公开(公告)日：2008-05-27
申请号：US11524273
申请日：2006-09-21
IPC分类号： G11C11/22 , G11C11/406 , G06F12/00 , G06F13/00
CPC分类号： G11C11/22
摘要： This memory comprises a first frequency detecting portion detecting access frequencies with respect to a plurality of memory cell blocks respectively, a comparator comparing the access frequencies with respect to the plurality of memory cell blocks detected by the first frequency detecting portion with each other and a refresh portion exercising control for selecting a prescribed memory cell block from among the plurality of memory cell blocks on the basis of comparison data output from the comparator and preferentially rewriting data in the memory cells included in the selected memory cell block.
摘要翻译： 该存储器包括分别检测相对于多个存储单元块的存取频率的第一频率检测部分，比较第一频率检测部分检测到的与多个存储单元块相关的存取频率的比较器和刷新 基于从比较器输出的比较数据，从多个存储单元块中选择规定的存储单元块的部分运动控制，并优先地重写在所选择的存储单元块中包括的存储单元中的数据。
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10.发明授权Dielectric element including oxide dielectric film and method of manufacturing the same 有权包含氧化物介电膜的电介质元件及其制造方法公开(公告)号：US06762476B2
公开(公告)日：2004-07-13
申请号：US10060260
申请日：2002-02-01
IPC分类号： H01L2900
摘要： A dielectric element capable of attaining excellent element characteristics by suppressing an oxide dielectric film from deterioration of characteristics caused by hydrogen is obtained. This dielectric element comprises a lower electrode including a first conductor film containing a metal, silicon and nitrogen, a first insulator film including the oxide dielectric film and an upper electrode including a second conductor film containing the metal, silicon and nitrogen, while the metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. According to this structure, the first conductor film and the second conductor film function as barrier films preventing diffusion of hydrogen. Consequently, the first conductor film and the second conductor film suppress hydrogen from diffusing into the oxide dielectric film. Thus, the oxide dielectric film is prevented from deterioration of characteristics.
摘要翻译： 获得能够通过抑制氧化物电介质膜由氢引起的特性劣化而获得优异元素特性的电介质元件。 该电介质元件包括下电极，其包括含有金属，硅和氮的第一导体膜，包括氧化物电介质膜的第一绝缘膜和包括含有金属，硅和氮的第二导体膜的上电极，而金属包括 选自由Ir，Pt，Ru，Re，Ni，Co和Mo组成的组中的至少一种金属。根据该结构，第一导体膜和第二导体膜用作阻止氢扩散的阻挡膜。 因此，第一导体膜和第二导体膜抑制氢扩散到氧化物介电膜中。 因此，防止了氧化物介电膜的特性劣化。
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