Memory device having storage part and thin-film part
    1.
    发明授权
    Memory device having storage part and thin-film part 有权
    具有存储部分和薄膜部分的存储器件

    公开(公告)号:US06977402B2

    公开(公告)日:2005-12-20

    申请号:US10802786

    申请日:2004-03-18

    摘要: A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on average, a second electrode film formed on the storage part of the storage material film. The thickness of the thin-film part may be between 15% and 95% of the thickness of the storage part. An insulator film may be formed on the thin-film part and the second electrode part, the insulator film formed on the thin-film part having a same pattern as the thin-film part.

    摘要翻译: 存储器包括:第一电极膜,形成在第一电极膜上的存储材料膜,设置有存储部分和具有小于存储部分的厚度的厚度的薄膜部分,并且其厚度小于存储部分的厚度的至少约15% 平均存储部分的厚度,形成在存储材料膜的存储部分上的第二电极膜。 薄膜部分的厚度可以在存储部件的厚度的15%至95%之间。 可以在薄膜部分和第二电极部分上形成绝缘体膜,在薄膜部分上形成的绝缘膜具有与薄膜部分相同的图案。

    Dielectric device having dielectric film terminated by halogen atoms
    2.
    发明授权
    Dielectric device having dielectric film terminated by halogen atoms 有权
    具有由卤素原子终止的电介质膜的介电器件

    公开(公告)号:US07247900B2

    公开(公告)日:2007-07-24

    申请号:US10631858

    申请日:2003-08-01

    摘要: A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.

    摘要翻译: 提供了具有优异特性的电介质器件。 该电介质器件包括这样的第一电极层,其表面上的构成元件被卤素原子封端,并且形成在由卤素原子终止的第一电极层的表面上的电介质膜。 为了形成具有铋层结构的铁电体膜,为了形成具有铋层结构的铁电体膜而将位于其表面上的第一电极层的构成元件端接,因此,阻止构成铁电体膜的Bi与位于 第一电极层的表面。

    Method of fabricating memory and memory
    3.
    发明申请
    Method of fabricating memory and memory 失效
    制造记忆和记忆的方法

    公开(公告)号:US20060063279A1

    公开(公告)日:2006-03-23

    申请号:US11260243

    申请日:2005-10-28

    IPC分类号: H01L21/00 H01L29/94

    摘要: A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

    摘要翻译: 提供一种制造能够提高从存储单元读取的信号的强度的存储器的方法。 这种制造存储器的方法包括以下步骤:通过将形成在第一电极膜上的存储材料膜部分地蚀刻预定厚度来形成存储部分和蚀刻的薄膜部分,形成绝缘膜以至少覆盖薄膜 部分储存材料膜,并通过在绝缘膜的规定区域上形成蚀刻掩模,然后蚀刻绝缘膜和存储材料的薄膜部分来对绝缘膜和存储材料膜的薄膜部分进行图案化 材料膜通过蚀刻掩模。

    Method of fabricating memory and memory
    4.
    发明授权
    Method of fabricating memory and memory 失效
    制造记忆和记忆的方法

    公开(公告)号:US07297559B2

    公开(公告)日:2007-11-20

    申请号:US11260243

    申请日:2005-10-28

    IPC分类号: H01L21/00

    摘要: A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

    摘要翻译: 提供一种制造能够提高从存储单元读取的信号的强度的存储器的方法。 这种制造存储器的方法包括以下步骤:通过将形成在第一电极膜上的存储材料膜部分地蚀刻预定厚度来形成存储部分和蚀刻的薄膜部分,形成绝缘膜以至少覆盖薄膜 部分储存材料膜,并通过在绝缘膜的规定区域上形成蚀刻掩模,然后蚀刻绝缘膜和存储材料的薄膜部分来对绝缘膜和存储材料膜的薄膜部分进行图案化 材料膜通过蚀刻掩模。

    Dielectric element including oxide-based dielectric film and method of fabricating the same
    5.
    发明授权
    Dielectric element including oxide-based dielectric film and method of fabricating the same 有权
    包含氧化物基电介质膜的电介质元件及其制造方法

    公开(公告)号:US06888189B2

    公开(公告)日:2005-05-03

    申请号:US09956817

    申请日:2001-09-21

    摘要: A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.

    摘要翻译: 得到能够有效地抑制氧化物系电介质膜烧结的热处理中的氧扩散到位于下部电极下方的区域的电介质元件。 该电介质元件包括下电极,该下电极包括具有抑制氧扩散功能的第一导体膜,形成在下电极上的包括氧化物类电介质膜的第一电介质膜和布置在区域上的第一绝缘膜 除了下部电极之外,具有抑制氧的扩散的功能。 因此,第一导体膜和第一绝缘膜用作防止氧扩散的阻挡膜,由此第一导体膜有效地防止氧沿着下电极的晶界向下扩散,而第一绝缘膜有效地防止氧向下扩散 在用于烧结氧化物基电介质膜的热处理中除下电极之外的区域。

    Electrostatic operation device
    6.
    发明授权
    Electrostatic operation device 有权
    静电操作装置

    公开(公告)号:US08466600B2

    公开(公告)日:2013-06-18

    申请号:US13464741

    申请日:2012-05-04

    IPC分类号: H02N1/00

    CPC分类号: H02N1/006 H01G7/023 H02N1/08

    摘要: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

    摘要翻译: 可以抑制由物理冲击引起的驻留体膜中累积的电荷量的变化的静电操作装置。 静电感应发生装置(静电感应发生装置(1))包括可移动电极(8),在它们之间的空间与可动电极(8)相对形成的驻极体膜(5),以及用于 抑制在预定空间内可移动电极(8)到驻极体膜(5)的接近​​。

    Semiconductor memory device with stack type memory cell
    7.
    发明授权
    Semiconductor memory device with stack type memory cell 失效
    具有堆叠型存储单元的半导体存储器件

    公开(公告)号:US5444653A

    公开(公告)日:1995-08-22

    申请号:US227509

    申请日:1994-04-13

    CPC分类号: H01L27/10852

    摘要: Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.

    摘要翻译: 公开了一种半导体存储器件,其具有堆叠型存储单元,每个堆叠型存储单元包括一个MIS晶体管和一个MIS电容器。 布置具有预定厚度的第一导电膜以覆盖与MIS晶体管的源极或漏极区对应的存储单元的存储器节点接触。 在第一导电膜的表面上形成具有预定厚度的第二导电膜,并且通过形成在存储器节点接触件内部的存储节点接触孔与源区或漏区接触。 第一和第二导电膜形成MIS电容器的电容器电极。

    ENERGY CONVERTER
    9.
    发明申请
    ENERGY CONVERTER 审中-公开
    能源转换器

    公开(公告)号:US20080296984A1

    公开(公告)日:2008-12-04

    申请号:US12128884

    申请日:2008-05-29

    IPC分类号: H02K35/00

    CPC分类号: H02K35/02 H02K41/03

    摘要: This energy converter includes a first flat coil and a magnet opposed to the first flat coil at an interval, and the first flat coil and the magnet are so formed as to be relatively movable, for converting kinetic energy to electric energy by electromagnetic induction.

    摘要翻译: 该能量转换器包括第一扁平线圈和与间隔的第一扁平线圈相对的磁体,并且第一扁平线圈和磁体形成为可相对移动的,用于通过电磁感应将动能转换成电能。

    LINEAR MOTOR AND MOBILE DEVICE HAVING LINEAR MOTOR
    10.
    发明申请
    LINEAR MOTOR AND MOBILE DEVICE HAVING LINEAR MOTOR 审中-公开
    具有线性电动机的线性电动机和移动装置

    公开(公告)号:US20110204732A1

    公开(公告)日:2011-08-25

    申请号:US13126349

    申请日:2009-08-10

    IPC分类号: H02K33/00

    CPC分类号: H02K33/16 H02K3/26

    摘要: A linear motor capable of attaining thinning is obtained. This linear motor (100) includes a spiral coil (141, 142, 441, 442); and a movable portion (120, 220), including a first pole face (121a) having a first polarity and a second pole face (122a) having a second polarity different from the first polarity on a surface opposed to the spiral coil, provided to be movable in a direction along the surface of the spiral coil.

    摘要翻译: 获得能够获得稀化的线性电动机。 该线性马达(100)包括螺旋线圈(141,142,441,442); 和包括具有第一极性的第一极面(121a)和在与所述螺旋线圈相对的表面上具有与所述第一极性不同的第二极性的第二极面(122a)的可动部分(120,220),其设置成 可沿着螺旋线圈表面的方向移动。