公开(公告)号：US20110175109A1

公开(公告)日：2011-07-21

申请号：US13074284

申请日：2011-03-29

申请人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： H01L29/16

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

公开(公告)号：US07960905B2

公开(公告)日：2011-06-14

申请号：US11994065

申请日：2006-06-21

申请人： Takatoshi Yamada ,  Christoph Nebel ,  Shinichi Shikata

发明人： Takatoshi Yamada ,  Christoph Nebel ,  Shinichi Shikata

IPC分类号： H01J1/00

CPC分类号： H01J9/025 ,  H01J1/304

摘要： The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.

摘要翻译： 本发明提供了可用于低电压可操作的冷阴极表面结构的稳定且优异的电子发射特性的金刚石电子源和用于制备金刚石电子源的方法。 具体地说，具有碳末端结构的金刚石电子源具有由电极和金刚石膜构成的结构，并且当施加电压时，从金刚石膜发射电子或电子束。 金刚石膜由具有碳末端结构的金刚石制成。 本文还提供了制备金刚石电子源的方法。

公开(公告)号：US20100247884A1

公开(公告)日：2010-09-30

申请号：US12681145

申请日：2008-10-03

申请人： Hideyuki Watanabe ,  Christoph Nebel ,  Shinichi Shikata

发明人： Hideyuki Watanabe ,  Christoph Nebel ,  Shinichi Shikata

IPC分类号： B32B7/02 ,  B32B9/04 ,  C30B25/20

CPC分类号： C23C16/27 ,  C23C16/45523 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02444 ,  H01L21/02507 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02634 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/30

摘要： The present invention aims at providing a high performance device that is not restricted by the current concept of a super-lattice and can overcome or loosen limitations on physical properties of materials and various problems related to hetero junction, and achieves an isotope diamond layered body formed by layering of 12C diamond film and 13C diamond film by epitaxially growing the 12C diamond film and the 13C diamond film.

摘要翻译： 本发明的目的在于提供一种不受现有超晶格概念限制的高性能器件，可以克服或松开材料的物理性质和与异质结有关的各种问题的限制，并且实现了形成的同位素金刚石层状体 通过外延生长12C金刚石膜和13C金刚石膜来分层12C金刚石膜和13C金刚石膜。

公开(公告)号：US20090121614A1

公开(公告)日：2009-05-14

申请号：US11994065

申请日：2006-06-21

申请人： Takatoshi Yamada ,  Christoph Nebel ,  Shinichi Shikata

发明人： Takatoshi Yamada ,  Christoph Nebel ,  Shinichi Shikata

IPC分类号： H01J1/62 ,  H01J9/02

CPC分类号： H01J9/025 ,  H01J1/304

摘要： The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.

摘要翻译： 本发明提供了可用于低电压可操作的冷阴极表面结构的稳定且优异的电子发射特性的金刚石电子源和用于制备金刚石电子源的方法。 具体地说，具有碳末端结构的金刚石电子源具有由电极和金刚石膜构成的结构，并且当施加电压时，从金刚石膜发射电子或电子束。 金刚石膜由具有碳末端结构的金刚石制成。 本文还提供了制备金刚石电子源的方法。

公开(公告)号：US5536952A

公开(公告)日：1996-07-16

申请号：US280805

申请日：1994-07-26

申请人： Shinichi Shikata

发明人： Shinichi Shikata

IPC分类号： H01L21/04 ,  H01L21/205 ,  H01L29/267 ,  H01L29/737 ,  H01L29/04 ,  H01L31/0256 ,  H01L31/0312 ,  H01L31/0328

CPC分类号： H01L29/66037 ,  H01L21/02376 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/267 ,  H01L29/66068 ,  H01L29/7371 ,  Y10S438/931 ,  Y10S438/932

摘要： This transistor is a pnp transistor having a heterojunction of p-type diamond (or BP.sub.x N.sub.1-x, 6HSiC) and n-type SiC (3CSiC)and having a structure in which a p.sup.+ -SiC (3CSiC ) layer, a p-SiC (3CSiC) layer, an n.sup.+ -SiC (3CSiC) layer, a p-diamond (or BP.sub.x N.sub.1-x, 6HSiC ) layer, and a p.sup.+ -diamond (or BP.sub.x N.sub.1-x, 6HSiC) layer are formed on a substrate, and a collector electrode, a base electrode, and an emitter electrode are formed on and electrically connected to the p.sup.+ -Sic layer, the n.sup.+ -SiC layer, and the layer, respectively. This semiconductor device has a high resistance to environment.

摘要翻译： 该晶体管是具有p型金刚石（或BPxN1-x，6HSiC）和n型SiC（3CSiC）的异质结的pnp晶体管，并且具有其中p + -SiC（3CSiC）层，p-SiC（ 3CSiC）层，n + -SiC（3CSiC）层，p金刚石（或BPxN1-x，6HSiC）层和p + - 金刚石（或BPxN1-x，6HSiC）层形成在基板上，并且集电体 电极，基极电极和发射极电极分别形成在p + -Sic层，n + -SiC层和层上并电连接。 该半导体器件具有高的耐环境性。

公开(公告)号：US08876973B2

公开(公告)日：2014-11-04

申请号：US13344104

申请日：2012-01-05

申请人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  B01J3/06 ,  B32B9/00 ,  C30B29/04 ,  C30B25/10 ,  C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  H01L21/02 ,  C30B25/18

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

公开(公告)号：US08075359B2

公开(公告)日：2011-12-13

申请号：US12066976

申请日：2006-08-28

申请人： Takatoshi Yamada ,  Shinichi Shikata

发明人： Takatoshi Yamada ,  Shinichi Shikata

IPC分类号： H01J9/04 ,  H01J9/12

CPC分类号： H01J9/025 ,  C23C16/274 ,  C23C16/278 ,  H01J1/304 ,  H01J2201/30457

摘要： A phosphorus-doped diamond film, which contains phosphorus at a concentration of 1015 cm−3 or more, has a resistivity of 107 Ωcm or less, and allows the voltage for initiation of electron emission to be 30V or less. A method for producing the phosphorus-doped diamond film by growing a diamond film on a diamond substrate by chemical vapor deposition method in an atmosphere containing methane and hydrogen gases and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorus. A diamond electron source having an electrode and a substrate which contains the phosphorous-doped diamond film and emitting electron beams from the phosphorous-doped diamond film when voltage is applied between the electrode and the substrate.

摘要翻译： 含有浓度为1015cm -3以上的磷的磷掺杂金刚石膜的电阻率为107Ω·cm以上，允许电子发射的电压为30V以下。 通过在含有甲烷和氢气和磷的气氛中，通过化学气相沉积法在金刚石基底上生长金刚石膜，使用叔丁基磷作为磷的添加来生产磷掺杂金刚石膜的方法。 一种金刚石电子源，具有电极和衬底，该电极和衬底包含磷掺杂金刚石膜，并且当电压施加在电极和衬底之间时，从掺杂磷的金刚石膜发射电子束。

公开(公告)号：US20100117098A1

公开(公告)日：2010-05-13

申请号：US12597578

申请日：2008-04-14

申请人： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata

发明人： Kazuhiro Ikeda ,  Hitoshi Umezawa ,  Shinichi Shikata

IPC分类号： H01L29/47 ,  H01L29/12 ,  H01L21/04

CPC分类号： H01L29/47 ,  C22C5/04 ,  H01L21/0435 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/872

摘要： To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.

摘要翻译： 为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低 并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。 一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％ 包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。

公开(公告)号：US20090140263A1

公开(公告)日：2009-06-04

申请号：US12300040

申请日：2007-04-27

申请人： Hitoshi Umezawa ,  Shinichi Shikata ,  Kazuhiro Ikeda

发明人： Hitoshi Umezawa ,  Shinichi Shikata ,  Kazuhiro Ikeda

IPC分类号： H01L29/16 ,  H01L21/22

CPC分类号： H01L29/1602 ,  H01L21/268 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/868 ,  H01L29/872

摘要： A method for surface treatment of diamond comprising exposing the surface of diamond to UV light containing wavelengths of 172 nm to 184.9 nm and 253.7 nm at an integrated exposure of 10 to 5,000 J/cm2 in an environment of an atmosphere having an oxygen concentration of 20 to 100% and an ozone concentration of 10 to 500,000 ppm to adsorb oxygen on the surface of diamond.

摘要翻译： 一种用于金刚石表面处理的方法，其特征在于，在氧浓度为20的气氛中，将金刚石的表面暴露于波长为172nm至184.9nm和253.7nm的紫外光，在10至5,000J / cm 2的整体曝光下 至100％，臭氧浓度为10〜500,000ppm，以吸附金刚石表面的氧。

公开(公告)号：US20080193366A1

公开(公告)日：2008-08-14

申请号：US11883488

申请日：2006-01-26

申请人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： C01B31/06 ,  C30B23/00

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基板（100）取向金刚石，用于化学气相沉积的装置在等离子体气相中提供氢，烃和磷化合物，等离子体气相中磷原子与碳原子的比例不小于0.1％，和 碳原子数与氢原子的比率为0.05％以上，制造方法为。