公开(公告)号：US20050233079A1

公开(公告)日：2005-10-20

申请号：US11155575

申请日：2005-06-20

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

IPC分类号： C23C16/18 ,  C23C16/02 ,  C23C16/16 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  C23C16/00 ,  H05H1/24

CPC分类号： C23C16/455 ,  C23C16/16 ,  H01L21/28556

摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

摘要翻译： 公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。 执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

公开(公告)号：US07344754B2

公开(公告)日：2008-03-18

申请号：US11155575

申请日：2005-06-20

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： C23C16/455 ,  C23C16/16 ,  H01L21/28556

摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

摘要翻译： 公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。 执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

公开(公告)号：US07456109B2

公开(公告)日：2008-11-25

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US20060124151A1

公开(公告)日：2006-06-15

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： B08B6/00

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US08029621B2

公开(公告)日：2011-10-04

申请号：US12067714

申请日：2006-07-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.

摘要翻译： 将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元， 放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料 设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华 在第二边。

公开(公告)号：US07361595B2

公开(公告)日：2008-04-22

申请号：US10471588

申请日：2002-03-14

申请人： Hideaki Yamasaki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： H01L21/44

CPC分类号： H01L28/65 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/18 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/3105 ,  H01L21/31612 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.

摘要翻译： 将半导体衬底放置在预定的处理容器中，并且通过例如氧化铝活化的氧气。 将转换成等离子体供给到绝缘膜上。 层间绝缘膜和绝缘膜的表面暴露于活性氧气。 之后，过渡金属膜，例如 通过CVD形成钌膜。

公开(公告)号：US06436203B1

公开(公告)日：2002-08-20

申请号：US09551393

申请日：2000-04-18

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： B05D136

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

摘要翻译： 本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。 在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中 引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。 对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

公开(公告)号：US20090197410A1

公开(公告)日：2009-08-06

申请号：US12306096

申请日：2007-06-21

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/443

CPC分类号： C23C16/34 ,  C23C16/52 ,  H01L21/28097 ,  H01L21/28556 ,  H01L29/4975 ,  H01L29/517

摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.

摘要翻译： 衬底设置在处理室中。 将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。 在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为 从而调节膜中的Si浓度。 特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

公开(公告)号：US07482283B2

公开(公告)日：2009-01-27

申请号：US10450161

申请日：2001-12-11

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45565 ,  C23C16/0218 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/52 ,  H01J37/32935 ,  H01L21/28556 ,  H01L21/28568

摘要： The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.

摘要翻译： 本发明涉及使用ALD工艺形成薄膜的方法和装置。 在ALD过程之前，一个接一个地提供多个源气体中的每一个，多次进行预处理过程，其中同时供给源气体以缩短潜伏期并提高生产量。

公开(公告)号：US20060068097A1

公开(公告)日：2006-03-30

申请号：US10711717

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Paul Jamison

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Paul Jamison

IPC分类号： C23C16/00

CPC分类号： H01L21/28556 ,  C23C16/16 ,  H01L21/28079 ,  H01L21/28247 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76856 ,  H01L29/517

摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

摘要翻译： 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层 从而抑制铼金属表面上含铼结核的氧诱导生长。