公开(公告)号：US07361595B2

公开(公告)日：2008-04-22

申请号：US10471588

申请日：2002-03-14

申请人： Hideaki Yamasaki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： H01L21/44

CPC分类号： H01L28/65 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/18 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/3105 ,  H01L21/31612 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.

摘要翻译： 将半导体衬底放置在预定的处理容器中，并且通过例如氧化铝活化的氧气。 将转换成等离子体供给到绝缘膜上。 层间绝缘膜和绝缘膜的表面暴露于活性氧气。 之后，过渡金属膜，例如 通过CVD形成钌膜。

公开(公告)号：US06966936B2

公开(公告)日：2005-11-22

申请号：US10277914

申请日：2002-10-23

申请人： Hideaki Yamasaki ,  Yumiko Kawano ,  Kenichi Kubo ,  Susumu Arima

发明人： Hideaki Yamasaki ,  Yumiko Kawano ,  Kenichi Kubo ,  Susumu Arima

IPC分类号： B01D53/64 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/52 ,  B01D45/08

CPC分类号： C23C16/18 ,  C23C16/4412 ,  C23C16/45593 ,  H01L21/28556 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S55/15

摘要： An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.

摘要翻译： 本发明的目的是为了确保真空泵的稳定运行，用于从低压处理室排出未使用的源气体和反应副产物气体，以有效地回收反应副产物以有效利用资源并减少运行 费用 低压CVD系统具有用于进行用于形成铜膜的低压CVD工艺的处理容器（10），用于供应有机铜化合物作为源气体的源气体供给单元（12），例如Cu （I）hfacTMVS进入处理容器（10），以及用于抽空处理容器（10）的抽空系统（14）。 抽真空系统（14）包括真空泵（26），相对于气体的流动方向设置在真空泵（26）上方的高温捕集装置（28）和低温捕集装置（30） ）相对于气体的流动方向设置在真空泵下方。 高温捕集装置（28）分解从处理容器（10）中吸出的气体中所含的未使用的Cu（I）hfacTMVS，以捕获金属铜。 低温捕获装置捕获作为反应副产物产生的Cu（II）（hfac）2 。

公开(公告)号：US06797068B1

公开(公告)日：2004-09-28

申请号：US10049283

申请日：2002-02-11

申请人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

摘要翻译： 本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置 处理容器和用于加热被放置在台架上的待处理物体的加热装置。 分隔壁围绕台的侧面和下侧。 通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。 间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

公开(公告)号：US06399484B1

公开(公告)日：2002-06-04

申请号：US09425971

申请日：1999-10-25

申请人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

发明人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

IPC分类号： H01L214763

CPC分类号： C23C16/45565 ,  C23C16/0281 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051

摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

摘要翻译： 一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨 通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。 当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。

公开(公告)号：US08679913B2

公开(公告)日：2014-03-25

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/8242 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US20110014797A1

公开(公告)日：2011-01-20

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/30

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US09187822B2

公开(公告)日：2015-11-17

申请号：US13825579

申请日：2011-09-05

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/30 ,  H01L45/00 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/06 ,  C23C16/305 ,  C23C16/44 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

摘要： Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

摘要翻译： 公开了一种形成Ge-Sb-Te膜的方法，其中将衬底设置在处理室内，气态Ge材料，气态Sb材料和Te材料被引入处理室中，使得Ge 由Ge2Sb2Te5形成的-Sb-Te膜通过CVD形成在基板上。 形成Ge-Sb-Te膜的方法包括：步骤（步骤2），其中气态Ge材料和气态Sb材料或替代地少量气态Te材料不足以形成Ge2Sb2Te5，除了气体 将Ge材料和气态Sb材料引入处理室，使得在基板上形成不含Te或含有Te的量的前体膜，其量小于Ge 2 Sb 2 Te 5中的Te; 和步骤（步骤3），其中将气态Te材料引入处理室，并使前体膜吸附Te，从而调节膜中的Te浓度。

公开(公告)号：US20110036288A1

公开(公告)日：2011-02-17

申请号：US12918165

申请日：2009-02-18

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： C30B1/02

CPC分类号： H01L21/02197 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/02356 ,  H01L21/31691 ,  H01L28/40

摘要： Disclosed is a method for Sr—Ti—O-base film formation. The method comprises placing a substrate with a Ru film formed thereon in a treatment vessel, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a first Sr—Ti—O-base film having a thickness of not more than 10 nm on the Ru film, annealing the first Sr—Ti—O-base film for crystallization, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a second Sr—Ti—O-base film on the first Sr—Ti—O-base film, and annealing the second Sr—Ti—O-base film for crystallization.

摘要翻译： 公开了一种Sr-Ti-O基成膜方法。 该方法包括将其上形成有Ru膜的基板放置在处理容器中，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成第一Sr-Ti-O基膜，其具有 在Ru膜上的厚度不大于10nm，对第一Sr-Ti-O基膜进行结晶退火，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成 在第一Sr-Ti-O基膜上形成第二Sr-Ti-O基膜，并对第二Sr-Ti-O基膜进行退火以进行结晶化。

公开(公告)号：US08372688B2

公开(公告)日：2013-02-12

申请号：US13376749

申请日：2010-06-02

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： H01L21/06

CPC分类号： H01L45/06 ,  C23C16/02 ,  C23C16/305 ,  C23C16/4405 ,  H01L45/144 ,  H01L45/1616

摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.

摘要翻译： 成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中 在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中， 并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。

公开(公告)号：US20120108005A1

公开(公告)日：2012-05-03

申请号：US13376749

申请日：2010-06-02

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： H01L21/06 ,  C23C16/52

CPC分类号： H01L45/06 ,  C23C16/02 ,  C23C16/305 ,  C23C16/4405 ,  H01L45/144 ,  H01L45/1616

摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.

摘要翻译： 成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中 在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中， 并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。