Process gas focusing apparatus and method
    11.
    发明授权
    Process gas focusing apparatus and method 失效
    工艺气体聚焦装置及方法

    公开(公告)号:US5891348A

    公开(公告)日:1999-04-06

    申请号:US592821

    申请日:1996-01-26

    摘要: An apparatus (20) for uniformly processing substrates (25) having a surface with a center (80) and a peripheral edge (85). The apparatus (20) comprises (i) a process chamber (30) having a gas distributor (55) for distributing process gas in the process chamber (30); (ii) a support (75) for supporting a substrate (25) in the process chamber (30); (iii) a plasma generator for forming a plasma from the process gas in the process chamber (30); and (iv) a focus ring (90) in the process chamber (30). The focus ring (90) comprises (a) a wall (95) surrounding the substrate (25) to substantially contain the plasma on the substrate surface, and (b) a channel (100) in the wall (95). The channel (100) has an inlet (105) adjacent to, and extending substantially continuously around the peripheral edge (85) of the substrate surface. The inlet (105) of the channel (100) has a width w sized to allow a sufficient amount of process gas to flow into the channel (100) to maintain substantially equal processing rates at the center (80) and peripheral edge (85) of the substrate surface.

    摘要翻译: 一种用于均匀地处理具有中心(80)和周缘(85)的表面的基板(25)的装置(20)。 设备(20)包括(i)具有用于在处理室(30)中分配处理气体的气体分配器(55)的处理室(30)。 (ii)用于在处理室(30)中支撑衬底(25)的支撑件(75); (iii)用于在所述处理室(30)中从所述处理气体形成等离子体的等离子体发生器; 和(iv)处理室(30)中的聚焦环(90)。 聚焦环(90)包括(a)围绕基底(25)以在基底表面上基本上包含等离子体的壁(95),和(b)壁(95)中的通道(100)。 通道(100)具有与衬底表面的周边边缘(85)相邻并且基本上连续地延伸的入口(105)。 通道(100)的入口(105)具有宽度w,其尺寸允许足够量的处理气体流入通道(100),以在中心(80)和外围边缘(85)处保持基本上相等的处理速率, 的基板表面。

    System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
    12.
    发明授权
    System level in-situ integrated dielectric etch process particularly useful for copper dual damascene 失效
    系统级原位集成电介质蚀刻工艺特别适用于铜双镶嵌

    公开(公告)号:US06949203B2

    公开(公告)日:2005-09-27

    申请号:US10379439

    申请日:2003-03-03

    摘要: An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.

    摘要翻译: 在具有第一和第二蚀刻室的多室衬底处理系统中执行的集成原位蚀刻工艺。 在一个实施例中,第一室包括已经被粗糙化至少100个的内表面,而第二室包括具有小于约32μm的粗糙度的内表面, / SUB>。 该方法包括在向下的方向上转移其上形成有图案的光致抗蚀剂掩模,电介质层,阻挡层和衬底中的特征的衬底,以接触第一室,其中介电层被刻蚀在鼓励聚合物的过程中 在室的粗糙内表面上形成。 然后在真空条件下将衬底从第一室转移到第二室,并且在第二室中暴露于诸如氧的反应性等离子体以剥离沉积在衬底上的光致抗蚀剂掩模。 在光致抗蚀剂掩模被剥离之后,通过阻止在第二室的相对光滑的内表面上聚合物形成的工艺,阻挡层被蚀刻到多室基板处理系统的第二室中以接触的特征。 所有三个蚀刻步骤都是在系统级原位工艺中进行的,因此基板不会在台阶之间暴露于环境中。 在一些实施例中,第一室的内表面具有在100和200之间的粗糙度,而在其它实施例中,第一室的内表面的粗糙度在110和160之间, SUB>。

    Method and apparatus for cleaning by-products from plasma chamber
surfaces
    13.
    发明授权
    Method and apparatus for cleaning by-products from plasma chamber surfaces 失效
    从等离子体室表面清洗副产品的方法和设备

    公开(公告)号:US5756400A

    公开(公告)日:1998-05-26

    申请号:US568064

    申请日:1995-12-08

    CPC分类号: B08B7/0042 Y10S438/905

    摘要: The present invention provides an apparatus and process for plasma cleaning the interior surfaces of semiconductor processing chambers. The method is directed to the dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residues with the activated cleaning gas to volatilize the residues; and removing the gaseous by-products from the chamber. The etchant gaseous mixture comprises an even or greater amount of at least one fluorine-containing gas and an even or lesser amount of at least one chlorine-containing gas. The instant invention enables the intermittent use of the cleaning steps in an ongoing plasma processing of semiconductor wafers without chamber downtime and significant loss of wafer production.

    摘要翻译: 本发明提供了一种用于等离子体清洁半导体处理室内表面的装置和方法。 该方法涉及连接到等离子体处理室的内表面上的累积污染物残留物的干蚀刻,并且包括引入含卤素气体的清洁气体混合物; 在基本上不含氧物质的环境中激活等离子体; 使污染物残留物与活化的清洁气体接触以挥发残余物; 并从室中除去气态副产物。 蚀刻剂气体混合物包含甚至或更多量的至少一种含氟气体和甚至或更少量的至少一种含氯气体。 本发明能够在半导体晶片的持续等离子体处理中间歇地使用清洁步骤,而无需室停机和晶片生产的显着损失。

    Gas injection slit nozzle for a plasma process reactor
    17.
    发明授权
    Gas injection slit nozzle for a plasma process reactor 失效
    用于等离子体处理反应器的气体注入狭缝喷嘴

    公开(公告)号:US5746875A

    公开(公告)日:1998-05-05

    申请号:US551881

    申请日:1995-10-16

    摘要: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.

    摘要翻译: 本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置,其具有腔室壳体,保持要加工的工件的基座,用于将RF能量施加到腔室中的装置,该气体注入装置具有气体供应 在气体中含有蚀刻剂物质,在腔室中的开口,设置在腔室中的开口内的气体分配装置,其具有面向腔室内部的至少一个开口孔,以及用于控制气体流速的装置 从一个或多个开槽孔,以及从供给到气体分配装置的气体供给管线。 在优选实施例中,气体分配装置包括由至少一个环形构件包围的中心构件,其间具有间隙,包括开槽孔。 优选地,气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。 在一个示例中,气体分配装置的每个构件包括陶瓷,熔融石英,聚合物或阳极氧化铝材料中的一种,气体供给管线包括不锈钢。 优选地,每个构件在气体分配装置的组装之前具有其表面抛光。