公开(公告)号：US06650683B2

公开(公告)日：2003-11-18

申请号：US10228217

申请日：2002-08-27

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18388 ,  H01S2301/166 ,  H01S2301/18

摘要： The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.

摘要翻译： 本发明提供一种表面发射半导体激光器，包括：半导体衬底，其上依次层叠有下层多层反射镜，有源层区域和上层多层反射镜，其与下层多层反射镜一起贡献 形成一个空腔; 上电极，其设置在所述上​​多层反射镜的上层上，并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分，其设置在所述上​​电极和所述下多层反射镜之间，并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径，使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值，并且抑制高阶横向模式，并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。

公开(公告)号：US06529541B1

公开(公告)日：2003-03-04

申请号：US09714980

申请日：2000-11-20

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/18388 ,  H01S2301/166

摘要： A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.

摘要翻译： 一种易于制造且具有高强度基本横向模式光输出功率的表面发射半导体激光器。 表面发射半导体激光器具有半导体衬底，其上依次层叠下n型DBR层，有源层区域，上p型DBR层，作为上层n型DBR层的上层的p侧电极， 型的DBR层，并且作为设置有形成激光束的发射区域的孔的上电极和通过氧化形成的电流限制部分起作用。 基于对应于p侧电极的区域中的空腔的反射率，确定孔的金属孔直径（Wmetal）和电流限制部分的直径（Woxide），使得光学 在激光束的高阶横向模式中的腔的损失和激光束的基本横向模式中的空腔的光学损耗变大。

公开(公告)号：US07058104B2

公开(公告)日：2006-06-06

申请号：US10375110

申请日：2003-02-28

申请人： Nobuaki Ueki ,  Hiromi Otoma ,  Akemi Murakami ,  Akira Sakamoto

发明人： Nobuaki Ueki ,  Hiromi Otoma ,  Akemi Murakami ,  Akira Sakamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01L2224/48463 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18344

摘要： A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The electrode portion includes a conductive layer electrically connected to the contact region and extends therefrom.

公开(公告)号：US07346089B2

公开(公告)日：2008-03-18

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US20060227835A1

公开(公告)日：2006-10-12

申请号：US11259096

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

发明人： Nobuaki Ueki ,  Jun Sakurai ,  Hiromi Otoma ,  Masateru Yamamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18397 ,  H01S5/3095

摘要： A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

摘要翻译： 隧道结型的表面发射半导体激光二极管包括半导体衬底，第一反射器，第二反射器，串联布置在第一和第二反射器之间的有源区，以及串联设置在第一和第二反射器之间的隧道结区域 反射器。 隧道结区域包括第一导电类型的第一半导体层和与第一半导体层形成结的第二导电类型的第二半导体层，第一半导体层由超晶格层组成，所述超晶格层至少部分地 包括铝并被部分氧化。

公开(公告)号：US06201825B1

公开(公告)日：2001-03-13

申请号：US09320711

申请日：1999-05-27

申请人： Jun Sakurai ,  Hideo Nakayama ,  Hiromi Otoma ,  Yasuaki Miyamoto

发明人： Jun Sakurai ,  Hideo Nakayama ,  Hiromi Otoma ,  Yasuaki Miyamoto

IPC分类号： H01S3082

CPC分类号： H01S5/1833 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/3432 ,  H01S2301/176

摘要： It is to provide a surface emitting semiconductor laser device having a long life time and uniform light output characteristics. A periphery of an upper surface and a side surface of a mesa structure is covered with a silicon oxide nitride film 34 as an inorganic insulating film, the mesa structure comprising a lower DBR 16 of a first conductive type formed on a first primary surface of an n-type GaAs substrate 12, having formed thereon an active region 24, an upper DBR 26 containing an AlAs layer 32 as the lowermost layer, and a p-type GaAs contact layer 28.

摘要翻译： 本发明提供一种寿命长，光输出特性均匀的表面发射半导体激光器件。在作为无机绝缘膜的氧化硅氮化物膜34覆盖台面结构的上表面和侧面的周围， 台面结构包括形成在n型GaAs衬底12的第一主表面上的第一导电类型的下DBR 16，其上形成有源区24，包含AlAs层32作为最下层的上DBR 26， 和p型GaAs接触层28。

公开(公告)号：US20090168819A1

公开(公告)日：2009-07-02

申请号：US11580579

申请日：2006-10-13

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/026 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06837 ,  H01S5/18311 ,  H01S5/2063 ,  H01S5/2081 ,  H01S5/423

摘要： A vertical-cavity surface-emitting laser diode (VCSEL) device, including a laser element portion formed on a substrate, the laser element portion comprising a multi-layer reflective mirror of a first conductivity type, an active layer, and a multi-layer reflective mirror of a second conductivity type, and a light absorbing heat converting region at a position thermally connected to the laser element portion on the substrate, the light absorbing heat converting region absorbing light and generating heat.

摘要翻译： 一种垂直腔表面发射激光二极管（VCSEL）器件，包括形成在衬底上的激光元件部分，激光元件部分包括第一导电类型的多层反射镜，有源层和多层 第二导电类型的反射镜，以及在与基板上的激光元件部分热连接的位置处的光吸收热转换区域，光吸收热转换区域吸收光并产生热量。

公开(公告)号：US20100208764A1

公开(公告)日：2010-08-19

申请号：US12542806

申请日：2009-08-18

申请人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

发明人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

IPC分类号： H01S5/18

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18311 ,  H01S5/18391 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/185

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 形成在半导体衬底上并包括第一导电类型的半导体多层的下反射器; 上反射器，其形成在所述半导体衬底上并且包括第二导电类型的半导体多层; 位于下反射器和上反射器之间的有源区; 介于所述下反射器和所述上反射器之间并且具有在垂直于光轴的平面中具有各向异性形状的导电区域的电流限制层; 以及电极，其形成在上反射体上并具有通过该开口射出激光束的开口，该开口在各向异性形状的方向上具有不同的边缘形状。

公开(公告)号：US07154927B2

公开(公告)日：2006-12-26

申请号：US10826354

申请日：2004-04-19

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/173

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a first semiconductor multilayer reflection film of a first conduction type on the semiconductor substrate; a second semiconductor multilayer reflection film of a second conduction type; an active region and a current confining layer interposed between the first and second semiconductor multilayer reflection films; and a low-resistance layer interposed between the current confining layer and the active region.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 半导体衬底上的第一导电类型的第一半导体多层反射膜; 第二导电类型的第二半导体多层反射膜; 插入在第一和第二半导体多层反射膜之间的有源区和电流限制层; 以及介于电流限制层和有源区之间的低电阻层。

公开(公告)号：US07098059B2

公开(公告)日：2006-08-29

申请号：US11109753

申请日：2005-04-20

申请人： Hiromi Otoma ,  Jun Sakurai

发明人： Hiromi Otoma ,  Jun Sakurai

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  G01R31/26

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/3054 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176

摘要： A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.

摘要翻译： 表面发射半导体激光器包括衬底，形成在衬底上的第一半导体多层反射器，形成在第一半导体多层反射器上的有源区，形成在有源区上的第二半导体多层反射器，介于第一和第二半导体层之间的电流限制层， 第二半导体多层反射器，并且部分地包括氧化物区域，以及形成在由半导体层提供的涂覆表面上的绝缘层，该半导体层是第一半导体多层反射器的一部分，并且在去除表面氧化层之后露出。