公开(公告)号：US09240370B1

公开(公告)日：2016-01-19

申请号：US14569797

申请日：2014-12-15

Applicant: Industrial Technology Research Institute

Inventor： Shu-Jung Yang ,  Yu-Lin Chao ,  June-Chien Chang ,  Jing-Yao Chang

IPC: H01L23/495 ,  H01L23/522 ,  H01L23/00 ,  H01L25/07

CPC classification number: H01L25/072 ,  H01L23/13 ,  H01L23/3735 ,  H01L23/427 ,  H01L23/492 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/83447 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A power module includes a first substrate, at least two power elements, at least one conductive structure and at least one leadframe. The first substrate includes a first dielectric layer and two first metal layers. The first dielectric layer has at least two concavities and two opposite surfaces, the two first metal layers are respectively disposed on the two surfaces, and the two concavities are respectively formed on the two surfaces. The two power elements are respectively embedded in the two concavities of the first dielectric layer. The two power elements are electrically connected to each other through the conductive structure. The leadframe disposed at the first substrate is electrically connected to the two power elements, and is partially extended outside the first substrate.

Abstract translation: 功率模块包括第一衬底，至少两个功率元件，至少一个导电结构和至少一个引线框架。 第一衬底包括第一电介质层和两个第一金属层。 第一电介质层具有至少两个凹部和两个相对的表面，两个第一金属层分别设置在两个表面上，并且两个凹部分别形成在两个表面上。 两个功率元件分别嵌入在第一介电层的两个凹部中。 两个功率元件通过导电结构彼此电连接。 设置在第一基板处的引线框架电连接到两个功率元件，并且部分地延伸到第一基板的外部。

公开(公告)号：US10707143B2

公开(公告)日：2020-07-07

申请号：US15606355

申请日：2017-05-26

Applicant: Industrial Technology Research Institute

Inventor： Shu-Jung Yang ,  Yu-Lin Chao ,  Chun-Kai Liu ,  Ming Kaan Liang ,  Jiin Shing Perng

IPC: H01L23/36 ,  H01L23/373 ,  H01L25/065 ,  H01L23/427 ,  H01L25/11 ,  H01L25/07 ,  H01L23/31 ,  H01L23/467 ,  H01L23/367

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

公开(公告)号：US10197255B2

公开(公告)日：2019-02-05

申请号：US15479733

申请日：2017-04-05

Applicant: Industrial Technology Research Institute

Inventor： Heng-Chieh Chien ,  Yu-Lin Chao ,  Wen-Fu Hsu ,  Chih-Ming Shen ,  Chia-Wei Jui ,  Yao-Shun Chen

IPC: F21V21/35 ,  F21V21/14 ,  F21V23/06 ,  F21V19/02 ,  F21V19/00 ,  H01R25/14 ,  F21Y115/15

Abstract: A rail-type organic light emitting diode lamp assembly is provided. The lamp assembly includes a lamp module, an annular member, a connector, a conductive member, and a rail module. The annular member includes a protrusion portion having a pair of indentations. The connector is connected to the annular member, and includes a through hole, a first end provided with a pair of ears and a second end provided with a pair of hooks. The conductive member is provided in the through hole and has a first end in contact with the annular conductive coil. The rail module is connected with the connector and includes a conductor in contact with a second end of the conductive member. The connector can be slidably hooked to the rail module through the hooks, and after the ears are inserted into the indentations, the annular member can be rotatable with respect to the connector.

公开(公告)号：US10051742B2

公开(公告)日：2018-08-14

申请号：US14964575

申请日：2015-12-10

Applicant: Industrial Technology Research Institute

Inventor： Shu-Jung Yang ,  Yu-Lin Chao ,  Heng-Chieh Chien ,  Chun-Kai Liu

IPC: H05K1/18 ,  H01L29/02 ,  H05K3/46

Abstract: A power module and a manufacturing method thereof are provided, and the power module includes a carrier substrate, an interconnection layer, a first chip, a second chip, a ceramic bonding substrate, a top interconnection layer and a lead frame. The interconnection layer is disposed on the carrier substrate. The first chip and the second chip are disposed on the interconnection layer, and electrically connected to the interconnection layer. The ceramic bonding substrate is disposed on the interconnection layer, and is disposed in between the first chip and the second chip so as to separate the first chip from the second chip. The top interconnection layer is disposed on the ceramic bonding substrate, covers the first chip and the second chip, and is electrically connected to the first chip and the second chip. The lead frame is disposed on the top interconnection layer and electrically connected to the top interconnection layer.

公开(公告)号：US20170345735A1

公开(公告)日：2017-11-30

申请号：US15606355

申请日：2017-05-26

Applicant: Industrial Technology Research Institute

Inventor： Shu-Jung Yang ,  Yu-Lin Chao ,  Chun-Kai Liu ,  Ming Kaan Liang ,  Jiin Shing Perng

IPC: H01L23/373 ,  H01L25/065 ,  H01L23/31 ,  H01L23/467 ,  H01L23/367

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

公开(公告)号：US20170171978A1

公开(公告)日：2017-06-15

申请号：US14964575

申请日：2015-12-10

Applicant: Industrial Technology Research Institute

Inventor： Shu-Jung Yang ,  Yu-Lin Chao ,  Heng-Chieh Chien ,  Chun-Kai Liu

IPC: H05K1/18 ,  H05K3/30 ,  H05K3/46 ,  H05K1/02 ,  H05K1/03

CPC classification number: H05K1/185 ,  H01L29/02 ,  H05K1/186 ,  H05K3/4605 ,  H05K2201/10 ,  H05K2201/10166

Abstract: A power module and a manufacturing method thereof are provided, and the power module includes a carrier substrate, an interconnection layer, a first chip, a second chip, a ceramic bonding substrate, a top interconnection layer and a lead frame. The interconnection layer is disposed on the carrier substrate. The first chip and the second chip are disposed on the interconnection layer, and electrically connected to the interconnection layer. The ceramic bonding substrate is disposed on the interconnection layer, and is disposed in between the first chip and the second chip so as to separate the first chip from the second chip. The top interconnection layer is disposed on the ceramic bonding substrate, covers the first chip and the second chip, and is electrically connected to the first chip and the second chip. The lead frame is disposed on the top interconnection layer and electrically connected to the top interconnection layer.

公开(公告)号：US09252054B2

公开(公告)日：2016-02-02

申请号：US14484970

申请日：2014-09-12

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Sheng-Tsai Wu ,  Heng-Chieh Chien ,  John H. Lau ,  Yu-Lin Chao ,  Wei-Chung Lo

IPC: H01L23/367 ,  H01L21/768 ,  H01L21/48 ,  H01L23/42 ,  H01L23/427 ,  H01L23/433 ,  H01L21/50 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L25/18

CPC classification number: H01L21/76898 ,  H01L21/4882 ,  H01L21/50 ,  H01L21/563 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/4275 ,  H01L23/433 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L2224/16235 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/16153 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/167 ,  H01L2924/16724 ,  H01L2924/16747 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

Abstract: A thinned integrated circuit device and manufacturing process for the same are disclosed. The manufacturing process includes forming a through-silicon via (TSV) on a substrate, a first terminal of the TSV is exposed on a first surface of the substrate, disposing a bump on the first surface of the substrate to make the bump electrically connected with the TSV, disposing an integrated circuit chip (IC) on the bump so that a first side of the IC is connected to the bump, disposing a thermal interface material (TIM) layer on a second side of the IC opposite to the first side of the IC, attaching a heat-spreader cap on the IC by the TIM layer, and backgrinding a second surface of the substrate to expose the TSV to the second surface of the substrate while carrying the heat-spreader cap.

Abstract translation: 公开了一种薄型集成电路器件及其制造方法。 制造工艺包括在衬底上形成贯通硅通孔（TSV），将TSV的第一端子暴露在衬底的第一表面上，在衬底的第一表面上设置凸块以使凸块电连接到 所述TSV在所述突起上设置集成电路芯片（IC），使得所述IC的第一侧连接到所述凸块，在所述IC的第二侧的第二侧上设置热界面材料（TIM）层， IC，通过TIM层将散热器帽附接到IC上，并且背衬研磨衬底的第二表面以在承载散热器盖的同时将TSV暴露于衬底的第二表面。

公开(公告)号：US11942396B2

公开(公告)日：2024-03-26

申请号：US17564219

申请日：2021-12-29

Applicant: Industrial Technology Research Institute

Inventor： Heng-Chieh Chien ,  Shu-Jung Yang ,  Yu-Min Lin ,  Chih-Yao Wang ,  Yu-Lin Chao

IPC: H01L23/427 ,  H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/427 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16235

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer. The circuit substrate is electrically connected to the second redistribution structure layer of the package assembly through the connectors.

公开(公告)号：US20230170279A1

公开(公告)日：2023-06-01

申请号：US17564219

申请日：2021-12-29

Applicant: Industrial Technology Research Institute

Inventor： Heng-Chieh Chien ,  Shu-Jung Yang ,  Yu-Min Lin ,  Chih-Yao Wang ,  Yu-Lin Chao

IPC: H01L23/427 ,  H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L23/48

CPC classification number: H01L23/427 ,  H01L25/0655 ,  H01L24/16 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/481 ,  H01L2224/16235

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer. The circuit substrate is electrically connected to the second redistribution structure layer of the package assembly through the connectors.

公开(公告)号：US20200286808A1

公开(公告)日：2020-09-10

申请号：US16883470

申请日：2020-05-26

Applicant: Industrial Technology Research Institute

Inventor： Shu-Jung Yang ,  Yu-Lin Chao ,  Chun-Kai Liu ,  Ming Kaan Liang ,  Jiin Shing Perng

IPC: H01L23/373 ,  H01L25/065 ,  H01L23/427 ,  H01L25/11 ,  H01L23/36 ,  H01L25/07

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.