公开(公告)号：US20150170835A1

公开(公告)日：2015-06-18

申请号：US14571316

申请日：2014-12-16

Applicant: Infineon Technologies AG

Inventor： Gottfried Beer ,  Bernhard Knott ,  Rainer Leuschner

IPC: H01F41/02 ,  H01F27/28 ,  H01F27/29 ,  H01F27/255

CPC classification number: H01F41/0206 ,  H01F17/0013 ,  H01F41/046 ,  H01F2017/0066 ,  H01L23/645 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/13055 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/19105 ,  Y10T29/4902 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

Abstract: A method for manufacturing an inductor core is developed, wherein the method comprises the following: Forming a first electrical conductor on a first surface of a plate-shaped magnetic core; forming a second electrical conductor on a second surface of the plate-shaped magnetic core, which is opposite the first surface; and forming the inductor core by dicing the plate-shaped magnetic core transverse to the first electrical conductor and second electrical conductor.

Abstract translation: 开发了用于制造电感器芯的方法，其中所述方法包括以下步骤：在板状磁芯的第一表面上形成第一电导体; 在与所述第一表面相对的所述板状磁芯的第二表面上形成第二电导体; 以及通过横切所述第一电导体和第二电导体切割所述板状磁芯而形成所述电感器芯。

公开(公告)号：US08674800B2

公开(公告)日：2014-03-18

申请号：US13967053

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01F5/00 ,  H01F27/28

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。

公开(公告)号：US11655143B2

公开(公告)日：2023-05-23

申请号：US17116021

申请日：2020-12-09

Applicant: Infineon Technologies AG

Inventor： Mathias Vaupel ,  Bernhard Knott ,  Horst Theuss

IPC: B81B7/00 ,  H01L23/04 ,  H01L23/24 ,  H01L23/498 ,  H01L23/16 ,  B81C1/00 ,  H01L21/311 ,  H01L21/52 ,  H01L21/56 ,  H01L23/055 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

CPC classification number: B81B7/0058 ,  B81C1/00301 ,  H01L21/31144 ,  H01L21/52 ,  H01L21/56 ,  H01L23/04 ,  H01L23/055 ,  H01L23/16 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/49541 ,  H01L23/49861 ,  H01L24/48 ,  H01L24/85 ,  B81B2201/0264 ,  H01L23/49551 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/45144 ,  H01L2924/00014

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

公开(公告)号：US10947109B2

公开(公告)日：2021-03-16

申请号：US16142826

申请日：2018-09-26

Applicant: Infineon Technologies AG

Inventor： Mathias Vaupel ,  Bernhard Knott ,  Horst Theuss

IPC: H01L29/84 ,  B81B7/00 ,  H01L23/04 ,  H01L23/24 ,  H01L23/498 ,  H01L23/16 ,  B81C1/00 ,  H01L21/311 ,  H01L21/52 ,  H01L21/56 ,  H01L23/055 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the semiconductor chip and also on a region of the bond wire which is adjacent to the electrical contact of the semiconductor chip, and/or on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

公开(公告)号：US20160318759A1

公开(公告)日：2016-11-03

申请号：US15206836

申请日：2016-07-11

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R19/04 ,  H04R31/00 ,  H04R19/00

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract translation: 公开了一种制造MEMS器件的方法。 此外，公开了一种MEMS器件和包括MEMS器件的模块。 一个实施例包括用于制造MEMS器件的方法，包括在衬底的第一主表面上形成MEMS堆叠，在衬底的第二主表面上形成聚合物层，并在聚合物层和衬底中形成第一开口，使得 第一个开口与MEMS堆栈相邻。

公开(公告)号：US20140159220A1

公开(公告)日：2014-06-12

申请号：US14180146

申请日：2014-02-13

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01L23/495 ,  H01L23/64

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。

公开(公告)号：US20130328166A1

公开(公告)日：2013-12-12

申请号：US13967053

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01L49/02

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。