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    Methods for Forming Back-Channel-Etch Devices with Copper-Based Electrodes
    12.
    发明申请
    Methods for Forming Back-Channel-Etch Devices with Copper-Based Electrodes 有权
    用铜基电极形成背沟槽蚀刻器件的方法

    公开(公告)号：US20140273341A1

    公开(公告)日：2014-09-18

    申请号：US14133421

    申请日：2013-12-18

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Sang Lee ,  Zhi-Wen Sun

    IPC: H01L21/465 ,  H01L21/70 ,  H01L29/66 ,  H01L21/02

    CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    Abstract: Embodiments described herein provide methods for forming indium-gallium-zinc oxide (IGZO) devices. A substrate is provided. An IGZO layer is formed above the substrate. A copper-containing layer is formed above the IGZO layer. A wet etch process is performed on the copper-containing layer to form a source region and a drain region above the IGZO layer. The performing of the wet etch process on the copper-containing layer includes exposing the copper-containing layer to an etching solution including a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.

    Abstract translation: 本文所述的实施方案提供了形成铟镓锌氧化物（IGZO）器件的方法。 提供基板。 在基板上形成IGZO层。 在IGZO层上形成含铜层。 在含铜层上进行湿式蚀刻处理，以在IGZO层上形成源极区域和漏极区域。 在含铜层上执行湿法蚀刻工艺包括将含铜层暴露于包括过氧化物化合物和柠檬酸，甲酸，丙二酸，乳酸，依替膦酸，膦酸或其中的一种的蚀刻溶液 其组合。

    Method of Fabricating High Efficiency CIGS Solar Cells
    14.
    发明申请
    Method of Fabricating High Efficiency CIGS Solar Cells 审中-公开
    制造高效CIGS太阳能电池的方法

    公开(公告)号：US20140041722A1

    公开(公告)日：2014-02-13

    申请号：US14053863

    申请日：2013-10-15

    Applicant: Intermolecular, Inc.

    Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

    IPC: H01L31/065

    CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

    Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

    Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。

    Absorbers for High-Efficiency Thin-Film PV
    15.
    发明申请
    Absorbers for High-Efficiency Thin-Film PV 审中-公开
    高效薄膜光伏吸收器

    公开(公告)号：US20130344646A1

    公开(公告)日：2013-12-26

    申请号：US13973199

    申请日：2013-08-22

    Applicant: Intermolecular, Inc.

    Inventor： Haifan Liang ,  Jeroen Van Duren

    IPC: H01L31/18

    CPC classification number: H01L31/1832 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  Y02E10/541 ,  Y02P70/521

    Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.

    Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Ag增加吸收层前表面带隙的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了利用Na，Mg，K或Ca中的至少一种来增加吸收层前表面的带隙的方法。

    Absorbers for high efficiency thin-film PV
    17.
    发明授权
    Absorbers for high efficiency thin-film PV 有权
    吸收器用于高效薄膜光伏

    公开(公告)号：US09178097B2

    公开(公告)日：2015-11-03

    申请号：US14180120

    申请日：2014-02-13

    Applicant: Intermolecular, Inc.

    Inventor： Haifan Liang ,  Jeroen Van Duren

    IPC: H01L21/00 ,  H01L31/065 ,  H01L31/032 ,  H01L31/0749 ,  H01L21/02

    CPC classification number: H01L31/065 ,  H01L21/02472 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

    Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber.

    Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了用于形成Cu-In-Ga层的方法，然后进行部分或全部硒化。 这导致在后界面处的较高的Ga浓度。 然后将衬底暴露于铝CVD前体，同时衬底仍然在硒化设备中以沉积薄的Al层。 然后将衬底暴露于Se源以完全转换吸收层。 这导致吸收器前面的较高的Al浓度。

    Optical Absorbers
    19.
    发明申请
    Optical Absorbers 有权
    光学吸收器

    公开(公告)号：US20140264708A1

    公开(公告)日：2014-09-18

    申请号：US14034226

    申请日：2013-09-23

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Haifan Liang

    IPC: H01L31/18 ,  H01L31/065

    CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/1832 ,  Y02E10/541 ,  Y02P70/521

    Abstract: Optical absorbers, solar cells comprising the absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a semiconductor layer having a bandgap of between about 1.0 eV and about 1.6 eV disposed on a substrate, wherein the semiconductor comprises two or more earth abundant elements. The bandgap of the optical absorber is graded through the thickness of the layer by partial substitution of at least one grading element from the same group in the periodic table as the at least one of the two or more earth abundant elements.

    Abstract translation: 公开了光吸收剂，包含吸收体的太阳能电池和制造吸收体的方法。 光吸收器包括具有位于衬底上的约1.0eV至约1.6eV之间的带隙的半导体层，其中该半导体包括两个或更多个大量丰富的元素。 光吸收体的带隙通过至少一个分级元素从周期表中与两个或更多个地球丰富元素中的至少一个元素相同的基团部分地取代层的厚度。

    Combinatorial Methods and Systems for Developing Thermochromic Materials and Devices
    20.
    发明申请
    Combinatorial Methods and Systems for Developing Thermochromic Materials and Devices 审中-公开
    用于开发热变色材料和器件的组合方法和系统

    公开(公告)号：US20140178583A1

    公开(公告)日：2014-06-26

    申请号：US13721472

    申请日：2012-12-20

    Applicant: INTERMOLECULAR, INC.

    Inventor： Jeroen Van Duren ,  Sang Lee ,  Sandeep Nijhawan

    IPC: B05D5/00

    CPC classification number: G02F1/0147 ,  C23C14/3464 ,  C23C14/505

    Abstract: Embodiments provided herein describe methods and systems for evaluating thermochromic material processing conditions. A plurality of site-isolated regions on at least one substrate are designated. A first thermochromic material is formed on a first of the plurality of site-isolated regions on the at least one substrate with a first set of processing conditions. A second thermochromic material is formed on a second of the plurality of site-isolated regions on the at least one substrate with a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

    Abstract translation: 本文提供的实施例描述了用于评估热变色材料加工条件的方法和系统。 指定至少一个基板上的多个位置隔离区域。 第一热变色材料在具有第一组处理条件的至少一个衬底上的多个位置隔离区域的第一个上形成。 在第二组加工条件下，在至少一个基板上的多个位置隔离区域的第二个上形成第二热变色材料。 第二组处理条件与第一组处理条件不同。

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