公开(公告)号：US09558935B2

公开(公告)日：2017-01-31

申请号：US14926684

申请日：2015-10-29

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L21/02 ,  H01L23/532 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L23/485

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract translation: 本发明的实施例提供无氢介电膜和制造方法。 化学气相沉积工艺（PECVD，热CVD，SACVD，HDP CVD和PE等）使用无氢前体，如四异氰酸酯硅烷和无氢反应物，如氮，氧（O 2 / O 3）和一氧化二氮 热ALD）以产生无氢介电膜。 在一些实施例中，存在具有各种材料的子层的多层电介质膜，例如氧化硅，氮化硅和氮氧化硅。 在实施方案中，无氢反应物可以包括四异氰酸酯硅烷，以及这些无H气体的无氢气体，包括但不限于N 2，O 2，O 3，N 2 O，CO 2，CO及其组合。 等离子体可用于增强TICS和其他无H气体之间的反应。 可以在膜沉积期间控制等离子体以在膜的每个子层内实现可变密度。

公开(公告)号：US09449812B2

公开(公告)日：2016-09-20

申请号：US14929719

申请日：2015-11-02

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L29/10 ,  H01L21/02 ,  H01L23/532 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423 ,  H01L23/485

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract translation: 本发明的实施例提供无氢介电膜和制造方法。 化学气相沉积工艺（PECVD，热CVD，SACVD，HDP CVD和PE等）使用无氢前体，如四异氰酸酯硅烷和无氢反应物，如氮，氧（O 2 / O 3）和一氧化二氮 热ALD）以产生无氢介电膜。 在一些实施例中，存在具有各种材料的子层的多层电介质膜，例如氧化硅，氮化硅和氮氧化硅。 在实施方案中，无氢反应物可以包括四异氰酸酯硅烷，以及这些无H气体的无氢气体，包括但不限于N 2，O 2，O 3，N 2 O，CO 2，CO及其组合。 等离子体可用于增强TICS和其他无H气体之间的反应。 可以在膜沉积期间控制等离子体以在膜的每个子层内实现可变密度。

公开(公告)号：US20160056111A1

公开(公告)日：2016-02-25

申请号：US14929719

申请日：2015-11-02

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

公开(公告)号：US20240312834A1

公开(公告)日：2024-09-19

申请号：US18185481

申请日：2023-03-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ashim Dutta ,  SON NGUYEN ,  Matthew T. Shoudy ,  Chih-Chao Yang

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329

Abstract: A first BEOL layer, including a first and a second signal line, a conformal dielectric surrounding an upper portion of a vertical sidewall of each of the first signal line and the second signal line, an air gap between the first and the second signal line, a vertical side boundary of the air gap is a vertical side surface of the first signal line. Forming a first and a second metal line in a sacrificial material in a first BEOL layer, removing the sacrificial material, forming a conformal dielectric surrounding vertical side surfaces of the first and the second metal line, an air gap between the first and the second metal line exposes an upper horizontal surface of a dielectric layer below the first BEOL layer, growing a dielectric selectively from an upper portion of the conformal dielectric, the air gap remains between the first and the second metal line.

公开(公告)号：US11688632B2

公开(公告)日：2023-06-27

申请号：US17136595

申请日：2020-12-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alex Joseph Varghese ,  Marc A. Bergendahl ,  Andrew M. Greene ,  Dallas Lea ,  Matthew T. Shoudy ,  Yann Mignot ,  Ekmini A. De Silva ,  Gangadhara Raja Muthinti

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768

CPC classification number: H01L21/76829 ,  H01L21/7682 ,  H01L21/7688 ,  H01L21/76805 ,  H01L21/76844

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

公开(公告)号：US20230098562A1

公开(公告)日：2023-03-30

申请号：US17489602

申请日：2021-09-29

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Timothy Mathew Philip ,  Andrew Herbert Simon ,  Matthew T. Shoudy ,  Injo Ok

IPC: H01L45/00

Abstract: A phase change memory (PCM) cell having a mushroom configuration includes a first electrode, a heater electrically connected to the first electrode, a first projection liner electrically connected to the heater, a PCM material electrically connected to the first projection liner, a second electrode electrically connected to the PCM material, and a second projection liner electrically connected to the first projection liner and the second electrode.

公开(公告)号：US20210151351A1

公开(公告)日：2021-05-20

申请号：US17136595

申请日：2020-12-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alex Joseph Varghese ,  Marc A. Bergendahl ,  Andrew M. Greene ,  Dallas Lea ,  Matthew T. Shoudy ,  Yann Mignot ,  Ekmini A. De Silva ,  Gangadhara Raja Muthinti

IPC: H01L21/768

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

公开(公告)号：US20200303246A1

公开(公告)日：2020-09-24

申请号：US16359442

申请日：2019-03-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alex Joseph Varghese ,  Marc A. Bergendahl ,  Andrew M. Greene ,  Dallas Lea ,  Matthew T. Shoudy ,  Yann Mignot ,  Ekmini A. De Silva ,  Gangadhara Raja Muthinti

IPC: H01L21/768

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

公开(公告)号：US09607825B2

公开(公告)日：2017-03-28

申请号：US14247559

申请日：2014-04-08

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L21/20 ,  H01L21/02 ,  H01L23/532 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L23/485

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

公开(公告)号：US09536733B2

公开(公告)日：2017-01-03

申请号：US14926858

申请日：2015-10-29

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L29/792 ,  H01L21/02 ,  H01L23/532 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L23/485

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.