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公开(公告)号：US20230299851A1
公开(公告)日：2023-09-21
申请号：US17700043
申请日：2022-03-21
Applicant: Intel Corporation
Inventor： Joshua B. FRYMAN , Khaled AHMED , Sergey SHUMARAYEV , Thomas LILJEBERG , Divya PRATAP , James E. JAUSSI
CPC classification number: H04B10/25891 , G02B6/4246 , G02B6/4202 , G02B6/423 , H04B10/502
Abstract: A system enables optical communication with direct conversion of the electrical signal into an optical signal with an array of optical sources. The use of the array of optical sources can eliminate the need for a large serializer/deserializer (SERDES). With an array of optical sources, the optical communication can occur at lower power and lower frequency per optical source, with multiple parallel optical sources combining to provide a signal.
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公开(公告)号：US20210135048A1
公开(公告)日：2021-05-06
申请号：US17146453
申请日：2021-01-11
Applicant: Intel Corporation
Inventor： Khaled AHMED , Anup PANCHOLI , Ali KHAKIFIROOZ
Abstract: Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.
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公开(公告)号：US20200212022A1
公开(公告)日：2020-07-02
申请号：US16235831
申请日：2018-12-28
Applicant: Intel Corporation
Inventor： Khaled AHMED
IPC: H01L25/16 , H01L27/12 , H01L33/62 , H01L33/44 , H01L33/60 , H01L33/42 , H01L33/24 , H01L33/00 , H01L21/67
Abstract: Micro light-emitting diode display fabrication processes and assembly apparatuses are described. In an example, a micro light emitting diode pixel structure includes a backplane including a glass substrate having an insulating layer disposed thereon, and a pixel thin film transistor circuit disposed in and on the insulating layer, the pixel thin film transistor circuit including a gate electrode and a channel. The micro light emitting diode pixel structure also includes a front plane including a metal pad coupled to the pixel thin film transistor circuit of the backplane, a micro light emitting diode device bonded to the metal pad, a spacer adjacent sidewalls of the micro light emitting diode, the spacer including a high refractive index material, and an insulating layer surrounding the spacer.
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公开(公告)号：US20190335553A1
公开(公告)日：2019-10-31
申请号：US15962965
申请日：2018-04-25
Applicant: Intel Corporation
Inventor： Khaled AHMED , Kunjal PARIKH
IPC: H05B33/08 , G02B3/00 , H01L25/075 , H01L27/12 , H01L29/24 , H01L29/786
Abstract: Micro light-emitting diode display driver architectures and pixel structures are described. In an example, a driver circuit for a micro light emitting diode device includes a current mirror. A linearized transconductance amplifier is coupled to the current mirror. The linearized transconductance amplifier is to generate a pulse amplitude modulated current that is provided to a set of micro LEDs connected in parallel to provide fault tolerance architecture.
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公开(公告)号：US20190157598A1
公开(公告)日：2019-05-23
申请号：US16239193
申请日：2019-01-03
Applicant: Intel Corporation
Inventor： Khaled AHMED , Ali KHAKIFIROOZ , Richmond HICKS
IPC: H01L51/50 , H01L33/20 , H01L27/32 , H01L51/56 , H01L33/24 , H01S5/183 , G02B27/01 , G06F3/01 , G02B27/10 , G02B6/35 , G02B6/27
Abstract: Embodiments related to emissive devices for displays are discussed. Some embodiments include light emitting diodes including an electron transport layer core having a tube shape with an inner and an outer sidewall, an emission layer on the inner and outer sidewalls, and a hole transport layer on the emission layer, displays and systems including such light emitting diodes, and methods for fabricating them. Other embodiments include emissive laser devices having an emission layer between a hole transport layer and an electron transport layer and first and second metasurface mirrors adjacent to the hole transport layer and the electron transport layer, respectively, displays and systems including such emissive laser devices, and methods for fabricating them.
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Patent Agency Ranking
公开(公告)号：US20240097079A1
公开(公告)日：2024-03-21
申请号：US17949857
申请日：2022-09-21
Applicant: Intel Corporation
Inventor： Brandon C. MARIN , Khaled AHMED , Srinivas V. PIETAMBARAM , Hiroki TANAKA , Paul WEST , Kristof DARMAWIKARTA , Gang DUAN , Jeremy D. ECTON , Suddhasattwa NAD
IPC: H01L33/48 , H01L25/075 , H01L33/00 , H01L33/32 , H01L33/62
CPC classification number: H01L33/486 , H01L25/0753 , H01L33/0075 , H01L33/32 , H01L33/62 , H01L2933/0066
Abstract: Integrated circuit (IC) packages are disclosed. In some embodiments, an IC package includes a glass substrate, a micro light emitting diode (LED), a semiconductor die, one or more through glass vias (TGVs) and a package substrate. The micro LED is positioned over the glass substrate. The TGVs are integrated into the glass substrate and connect the micro LED to the semiconductor die. The semiconductor die is connected to the package substrate to receive external signals when connected to a motherboard.
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公开(公告)号：US20220037572A1
公开(公告)日：2022-02-03
申请号：US17499741
申请日：2021-10-12
Applicant: Intel Corporation
Inventor： Khaled AHMED , Anup PANCHOLI
Abstract: Micro light-emitting diode (LED) display fabrication and assembly are described. In an example, a micro-light emitting diode (LED) display panel includes a display backplane substrate having a plurality of metal bumps thereon. A plurality of LED pixel elements includes ones of LED pixel elements bonded to corresponding ones of the plurality of metal bumps of display backplane substrate. One or more of the plurality of LED pixel elements has a graphene layer thereon. The graphene layer is on a side of the one or more of the plurality of LED pixel elements opposite the side of the metal bumps.
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公开(公告)号：US20190295992A1
公开(公告)日：2019-09-26
申请号：US15933163
申请日：2018-03-22
Applicant: Intel Corporation
Inventor： Khaled AHMED , Anup PANCHOLI
Abstract: Micro light-emitting diode (LED) display fabrication and assembly are described. In an example, a micro-light emitting diode (LED) display panel includes a display backplane substrate having a plurality of metal bumps thereon. A plurality of LED pixel elements includes ones of LED pixel elements bonded to corresponding ones of the plurality of metal bumps of display backplane substrate. One or more of the plurality of LED pixel elements has a graphene layer thereon. The graphene layer is on a side of the one or more of the plurality of LED pixel elements opposite the side of the metal bumps.
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公开(公告)号：US20180277523A1
公开(公告)日：2018-09-27
申请号：US15467974
申请日：2017-03-23
Applicant: INTEL CORPORATION
Inventor： Khaled AHMED , Kunjal PARIKH
CPC classification number: H01L25/0753 , H01L27/14 , H01L27/156 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/405 , H01L33/60 , H01L2933/0083
Abstract: Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.
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公开(公告)号：US20180175248A1
公开(公告)日：2018-06-21
申请号：US15381937
申请日：2016-12-16
Applicant: Intel Corporation
Inventor： Khaled AHMED
IPC: H01L33/44 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/62 , H01L25/075 , H01L25/16 , H01L23/66 , H01L33/00
CPC classification number: H01L33/44 , H01L23/66 , H01L25/0753 , H01L25/167 , H01L31/035236 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/62 , H01L2223/6677
Abstract: LED structures passivated with a III-N passivation material including Al. The III-N passivation material may reduce nonradiative recombination, reducing leakage current of an LED structure, and/or improve luminous efficacy. An LED structure may include III-N materials in a multiple quantum well (MQW) structure, and the III-N passivation material including Al may have a wider bandgap than any of the materials in the MQW structure. The III-N passivation material may be AlN, which can be deposited as a binary compound at low temperatures to maintain quality of the MQW structure. The III-N passivation material can be selectively deposited on a sidewall of at least the MQW structure. The III-N passivation material can be unselectively deposited over an LED structure and then etched to form a III-N spacer along a sidewall of at least the MQW structure. Energy efficient RGB micro(μ) LED emissive displays may include passivated LED structures.
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