公开(公告)号：US08177911B2

公开(公告)日：2012-05-15

申请号：US11907322

申请日：2007-10-11

申请人： Akihiro Hachigo ,  Takayuki Nishiura

发明人： Akihiro Hachigo ,  Takayuki Nishiura

IPC分类号： C30B29/14

CPC分类号： G01N21/9501 ,  G01N21/6489

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.

摘要翻译： 一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光致发光的测定的工序; 在通过光致发光测定得到的发光光谱中，使用在与化合物半导体部件的带隙对应的波长下的峰值的半值宽度来评价化合物半导体部件的表面的损伤的工序。

公开(公告)号：US08124498B2

公开(公告)日：2012-02-28

申请号：US12535201

申请日：2009-08-04

申请人： Akihiro Hachigo

发明人： Akihiro Hachigo

IPC分类号： H01L21/00

CPC分类号： H01L21/187

摘要： The present method of manufacturing a group III nitride semiconductor layer bonded substrate includes the steps of: implanting ions I of at least any of hydrogen and helium in a region having a prescribed depth D from one main surface of a group III nitride semiconductor substrate; bonding a different-composition substrate with the main surface of the group III nitride semiconductor substrate; obtaining a group III nitride semiconductor layer bonded substrate by separating the group III nitride semiconductor substrate at a region implanted with the ions I; and annealing the group III nitride semiconductor layer bonded substrate at a temperature not lower than 700° C. in an atmosphere of a nitrogen-containing gas N. Thus, a group III nitride semiconductor layer bonded substrate high in crystallinity of a group III nitride semiconductor layer is provided.

摘要翻译： 本发明的制造III族氮化物半导体层键合衬底的方法包括以下步骤：在III族氮化物半导体衬底的一个主表面上，在具有规定深度D的区域中注入氢和氦中的至少一种的离子I; 将不同组成的衬底与III族氮化物半导体衬底的主表面接合; 通过在注入离子I的区域分离III族氮化物半导体衬底来获得III族氮化物半导体层键合衬底; 并且在含氮气体N的气氛中，在不低于700℃的温度下退火III族氮化物半导体层键合衬底。因此，III族氮化物半导体的结晶度高的III族氮化物半导体层接合衬底 提供层。

公开(公告)号：US08101968B2

公开(公告)日：2012-01-24

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US20110223749A1

公开(公告)日：2011-09-15

申请号：US12913062

申请日：2010-10-27

申请人： Hiromu SHIOMI ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

发明人： Hiromu SHIOMI ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

IPC分类号： H01L21/205 ,  H01L21/3063

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/7813

摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

摘要翻译： 本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入 其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解 从而将氮化物半导体外延层与氮化物半导体衬底分离。 由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

公开(公告)号：US20110018105A1

公开(公告)日：2011-01-27

申请号：US12890129

申请日：2010-09-24

申请人： Akihiro Hachigo ,  Takayuki Nishiura

发明人： Akihiro Hachigo ,  Takayuki Nishiura

IPC分类号： H01L21/30 ,  H01L29/34 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L33/007

摘要： There is provided a method of producing a nitride-based compound semiconductor device that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. The method of producing a nitride-based compound semiconductor device in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, the nitride-based compound semiconductor is cleaned with a cleaning liquid having a pH of 7.1 or higher ultrasonically.

摘要翻译： 提供一种制造氮化物系化合物半导体装置的方法，其抑制在化合物半导体的表面上包含杂质，微粒等的杂质的附着。 本发明的氮化物类化合物半导体装置的制造方法具有以下步骤：制备氮化物类化合物半导体（或基板制备工序）; 和清洁。 在清洁步骤中，用超声波pH为7.1或更高的清洗液清洗氮化物类化合物半导体。

公开(公告)号：US20080296584A1

公开(公告)日：2008-12-04

申请号：US12124161

申请日：2008-05-21

申请人： Akihiro Hachigo

发明人： Akihiro Hachigo

IPC分类号： H01L29/20

CPC分类号： H01L21/2007 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Affords III-V nitride semiconductor layer-bonded substrates from which semiconductor device of enhanced properties can be manufactured, and semiconductor devices incorporating the III-V nitride semiconductor layer-bonded substrates. The III-V nitride semiconductor layer-bonded substrate, in which a III-V nitride semiconductor layer and a base substrate are bonded together, is characterized in that thermal expansion coefficient difference between the III-V nitride semiconductor layer and the base substrate is 4.5×10−6 K−1 or less, and in that the thermal conductivity of the base substrate is 50 W·m−1·K−1 or more.

摘要翻译： 提供可以制造具有增强性能的半导体器件的III-V族氮化物半导体层结合的衬底，以及掺入III-V族氮化物半导体层结合衬底的半导体器件。 其中III-V族氮化物半导体层和基底结合在一起的III-V族氮化物半导体层键合衬底的特征在于，III-V族氮化物半导体层和基底衬底之间的热膨胀系数差为4.5 x10-6K-1以下，基底基板的热导率为50Wm-1.K-1以上。

公开(公告)号：US06984918B1

公开(公告)日：2006-01-10

申请号：US10089804

申请日：2000-10-04

申请人： Akihiro Hachigo ,  Katsuhiro Itakura ,  Satoshi Fujii ,  Hideaki Nakahata ,  Shinichi Shikata

发明人： Akihiro Hachigo ,  Katsuhiro Itakura ,  Satoshi Fujii ,  Hideaki Nakahata ,  Shinichi Shikata

IPC分类号： H01L41/04 ,  H03H9/145

CPC分类号： H03H9/02582 ,  H03H9/02574

摘要： The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.

摘要翻译： 本发明提供一种表面声波装置，其包括金刚石，其工作频率在几百MHz至几十GHz的范围内，并且能够在高频下操作。 本发明的声表面波器件包括金刚石层或基底层和金刚石层，ZnO压电层，叉指式换能器和短路电极层，其特征在于（2pi.H /λ< M 3）在3.0至10.0的范围内，其中ZnO层的厚度为H，声表面波的波长为λM。

公开(公告)号：US06710513B2

公开(公告)日：2004-03-23

申请号：US10203423

申请日：2002-08-08

申请人： Hideaki Nakahata ,  Akihiro Hachigo ,  Natsuo Tatsumi ,  Takahiro Imai ,  Shinichi Shikata

发明人： Hideaki Nakahata ,  Akihiro Hachigo ,  Natsuo Tatsumi ,  Takahiro Imai ,  Shinichi Shikata

IPC分类号： H03H925

CPC分类号： H03H9/02582 ,  H03H9/02574

摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.

摘要翻译： 提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件 根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

公开(公告)号：US06469416B1

公开(公告)日：2002-10-22

申请号：US09959954

申请日：2001-11-13

申请人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Satoshi Fujii ,  Shinichi Shikata

发明人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Satoshi Fujii ,  Shinichi Shikata

IPC分类号： H03H925

CPC分类号： H03H9/02984 ,  H03H9/02574 ,  H03H9/02582

摘要： A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.

摘要翻译： 提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波（SAW）装置。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ，其方程式为kh1 = 5.2pi（tz / lambd）和kh2 = 5.2pi（ts / lambd），其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。

公开(公告)号：US06337531B1

公开(公告)日：2002-01-08

申请号：US09504911

申请日：2000-02-16

申请人： Hideaki Nakahata ,  Masashi Narita ,  Akihiro Hachigo ,  Shin-ichi Shikata

发明人： Hideaki Nakahata ,  Masashi Narita ,  Akihiro Hachigo ,  Shin-ichi Shikata

IPC分类号： H01L4104

CPC分类号： H03H9/02582 ,  H03H9/02543

摘要： A surface-acoustic-wave (SAW) device that has not only an increased propagation velocity of SAWs but also an increased electromechanical coupling coefficient of 20% or more. The SAW device comprises a diamond substrate 10, a KNbO3 layer 30, and IDTs 40. The KNbO3 layer 30 is composed of a single crystal having the layer thickness and the crystal orientation that are controlled so as to obtain a propagation velocity of 5,000 m/s or more and an electromechanical coupling coefficient of 20% or more for the SAW in a specified mode.

摘要翻译： 一种表面声波（SAW）器件，其不仅具有增加的SAW的传播速度，而且增加了机电耦合系数的20％以上。 SAW器件包括金刚石衬底10，KNbO 3层30和IDT 40.KNbO 3层30由具有层厚度和晶体取向的单晶组成，以获得传播速度为5000m / s以上，在特定模式下，SAW的机电耦合系数为20％以上。