公开(公告)号：US20110223749A1

公开(公告)日：2011-09-15

申请号：US12913062

申请日：2010-10-27

申请人： Hiromu SHIOMI ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

发明人： Hiromu SHIOMI ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

IPC分类号： H01L21/205 ,  H01L21/3063

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/7813

摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

摘要翻译： 本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入 其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解 从而将氮化物半导体外延层与氮化物半导体衬底分离。 由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

公开(公告)号：US08349078B2

公开(公告)日：2013-01-08

申请号：US12913062

申请日：2010-10-27

申请人： Hiromu Shiomi ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

发明人： Hiromu Shiomi ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

IPC分类号： C30B25/20 ,  C30B25/22 ,  C30B29/40 ,  H01L21/306

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/7813

摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

摘要翻译： 本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入 其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解 从而将氮化物半导体外延层与氮化物半导体衬底分离。 由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

公开(公告)号：US20110133209A1

公开(公告)日：2011-06-09

申请号：US13027649

申请日：2011-02-15

申请人： Keiji ISHIBASHI ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji ISHIBASHI ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

摘要： A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

摘要翻译： 得到可以形成质量良好的外延生长层的GaN衬底。 作为III族氮化物衬底的GaN衬底具有表面的每平方厘米的氯原子数不大于2×1014的表面，并且每平方厘米表面的硅原子数不大于3 ×1013，其中所述表面的平面取向为（0001）面，（11-20）面，（10-12）面，（10-10）面，（20-21）面 ，（10-11）面，（11-21）面，（11-22）面和（11-24）面的纤锌矿结构。

公开(公告)号：US20100187540A1

公开(公告)日：2010-07-29

申请号：US12445681

申请日：2007-10-09

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20 ,  H01L21/306 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US08101968B2

公开(公告)日：2012-01-24

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US08283694B2

公开(公告)日：2012-10-09

申请号：US13027649

申请日：2011-02-15

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： H01L21/02658 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

摘要： A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

摘要翻译： 得到可以形成质量良好的外延生长层的GaN衬底。 作为III族氮化物衬底的GaN衬底具有表面的每平方厘米的氯原子数不大于2×1014的表面，并且每平方厘米表面的硅原子数不大于3 ×1013，其中所述表面的平面取向为（0001）面，（11-20）面，（10-12）面，（10-10）面，（20-21）面 ，（10-11）面，（11-21）面，（11-22）面和（11-24）面的纤锌矿结构。

公开(公告)号：US20110133207A1

公开(公告)日：2011-06-09

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×1013, and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and a haze level of the surface (3) is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底（1）是以下之一：III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且硅原子数 每平方厘米的表面（3）不大于3×1013; III族氮化物衬底，其中每平方厘米表面（3）的硅原子数不大于3×1013，并且表面（3）的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且表面（3）的雾度水平不大于5ppm。

公开(公告)号：US07901960B2

公开(公告)日：2011-03-08

申请号：US12445681

申请日：2007-10-09

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US20100207138A1

公开(公告)日：2010-08-19

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/30 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US20070164306A1

公开(公告)日：2007-07-19

申请号：US10598934

申请日：2005-05-13

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 本发明提供适合于半导体器件的尺寸的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始衬底分离由III族氮化物半导体晶体衬底和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。