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    Composition for pattern formation, and pattern-forming method
    12.
    发明授权
    Composition for pattern formation, and pattern-forming method 有权

    公开(公告)号：US11370872B2

    公开(公告)日：2022-06-28

    申请号：US16240070

    申请日：2019-01-04

    Applicant: JSR CORPORATION

    Inventor： Masafumi Hori ,  Hiroyuki Komatsu ,  Tomohiro Oda ,  Hitoshi Osaki ,  Takehiko Naruoka

    IPC: C08F297/02 ,  G03F7/32 ,  C08K5/10 ,  C08L53/00 ,  B82Y40/00 ,  B82Y30/00 ,  H01L21/027 ,  G03F7/00 ,  C08L25/04

    Abstract: A composition for pattern formation includes a first polymer, a second polymer and a solvent. The first polymer includes: a first block including a first structural unit derived from a substituted or unsubstituted styrene; and a second block including a second structural unit other than the first structural unit. The second polymer includes: the first structural unit; and a group bonding to at least one end of a main chain thereof and including a polar group. The polar group is preferably a hydroxy group or a carboxyl group. A number average molecular weight of the second polymer is preferably no greater than 6,000. A mass ratio of the second polymer to the first polymer is preferably no less than 0.15 and no greater than 0.4. The solvent preferably comprises a compound comprising a hydroxyl group and an alkyl ester group.

    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD
    14.
    发明申请
    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD 审中-公开

    公开(公告)号：US20190135967A1

    公开(公告)日：2019-05-09

    申请号：US16240070

    申请日：2019-01-04

    Applicant: JSR Corporation

    Inventor： Masafumi HORI ,  Hiroyuki Komatsu ,  Tomohiro Oda ,  Hitoshi Osaki ,  Takehiko Naruoka

    IPC: C08F297/02 ,  C08K5/10 ,  C08L25/04 ,  H01L21/027 ,  C08L53/00

    Abstract: A composition for pattern formation includes a first polymer, a second polymer and a solvent. The first polymer includes: a first block including a first structural unit derived from a substituted or unsubstituted styrene; and a second block including a second structural unit other than the first structural unit. The second polymer includes: the first structural unit; and a group bonding to at least one end of a main chain thereof and including a polar group. The polar group is preferably a hydroxy group or a carboxyl group. A number average molecular weight of the second polymer is preferably no greater than 6,000. A mass ratio of the second polymer to the first polymer is preferably no less than 0.15 and no greater than 0.4. The solvent preferably comprises a compound comprising a hydroxyl group and an alkyl ester group.

    Pattern-forming method and composition
    15.
    发明授权
    Pattern-forming method and composition 有权

    公开(公告)号：US10175575B2

    公开(公告)日：2019-01-08

    申请号：US15170108

    申请日：2016-06-01

    Applicant: JSR Corporation

    Inventor： Hitoshi Osaki

    IPC: G03F7/00 ,  C09D133/06 ,  G03F7/038 ,  G03F7/40 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  C09D133/04 ,  G03F7/039

    Abstract: A pattern-forming method includes forming a base pattern including a first polymer on a front face side. A composition is applied on at least a lateral face of the base pattern. The composition includes at least one polymer that is capable of interacting with the first polymer. The composition is heated such that a portion of the at least one polymer interacts with the first polymer and that a coating film is formed on the lateral face of the base pattern. Another portion of the at least one polymer not having interacted with the first polymer is removed to form a resist pattern. The base pattern in a planar view has a shape with a long axis and a short axis, and a ratio of lengths of the long axis to the short axis is no less than 1.5 and no greater than 10.

    Pattern-forming method and patterned substrate
    16.
    发明授权
    Pattern-forming method and patterned substrate 有权

    公开(公告)号：US11462405B2

    公开(公告)日：2022-10-04

    申请号：US16597947

    申请日：2019-10-10

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Miki Tamada ,  Hitoshi Osaki ,  Tomoki Nagai

    IPC: G03F7/075 ,  H01L21/033 ,  B81C1/00 ,  G03F7/26 ,  H01L21/308

    Abstract: A pattern-forming method includes forming a prepattern and including a first polymer is formed on a silicon-containing film on a substrate. An underlayer film including a second polymer is formed in recessed portions of the prepattern. A composition for directed self-assembled film formation including a third polymer is applied on the underlayer film and the prepattern. The first polymer includes a first structural unit. The second polymer includes: a molecular chain including the first structural unit and a second structural unit that differs from the first structural unit; and an end structure that bonds to one end of the molecular chain and includes at least one selected from the group consisting of an amino group, a hydroxy group and a carboxy group. The third polymer is a block copolymer including a block of the first structural unit and a block of the second structural unit.

    Pattern-forming method
    18.
    发明授权
    Pattern-forming method 有权

    公开(公告)号：US11195714B2

    公开(公告)日：2021-12-07

    申请号：US16922010

    申请日：2020-07-07

    Applicant: JSR CORPORATION

    Inventor： Hitoshi Osaki ,  Jeffrey Kmiec

    IPC: H01L21/02 ,  H01L21/306

    Abstract: A pattern-forming method includes forming a patterned coating film on a part of a surface layer of a base. The surface layer includes regions each of which includes a material that differs from each other. A part of the regions is the part of the surface layer on which the patterned coating film is formed. The patterned coating film includes a first polymer including at an end of a main chain or a side chain thereof a group including a first functional group that is capable of bonding to an atom present in the part of the region. An atom layer is directly or indirectly formed on the surface layer of the base by a vapor deposition, after the forming of the patterned coating film.

    RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION
    20.
    发明申请
    RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION 有权
    电阻形成方法和光电子组成

    公开(公告)号：US20150010866A1

    公开(公告)日：2015-01-08

    申请号：US14491445

    申请日：2014-09-19

    Applicant: JSR Corporation

    Inventor： Hitoshi Osaki ,  Hayato Namai ,  Shinya Minegishi

    IPC: G03F7/038

    CPC classification number: G03F7/038 ,  C08F220/18 ,  C08F220/26 ,  C08F220/34 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0275 ,  C08F220/38

    Abstract: A resist pattern-forming method includes forming a resist film using a photoresist composition. The resist film is exposed. The exposed resist film is developed. The photoresist composition includes an acid generator and a polymer. The acid generator generates a protonic acid upon application of exposure light. The protonic acid generates a proton. The polymer includes a first structural unit which includes a first group. The first group and the proton form a cationic group. The polymer substantially does not include a structural unit which includes an acid-labile group.

    Abstract translation: 抗蚀剂图案形成方法包括使用光致抗蚀剂组合物形成抗蚀剂膜。 抗蚀剂膜被曝光。 显影出抗蚀剂膜。 光致抗蚀剂组合物包括酸发生剂和聚合物。 酸发生剂在施加曝光光时产生质子酸。 质子酸产生质子。 聚合物包括包含第一组的第一结构单元。 第一组和质子形成阳离子基团。 聚合物基本上不包括包含酸不稳定基团的结构单元。

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