公开(公告)号：US20150225601A1

公开(公告)日：2015-08-13

申请号：US14620935

申请日：2015-02-12

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Tomoki NAGAI

IPC: C09D153/00 ,  B05D3/02 ,  B05D3/06 ,  B05D3/10

CPC classification number: C09D153/00 ,  B05D1/185 ,  C08F212/08 ,  C08F230/08 ,  C08F297/026 ,  G03F7/0002

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.

Abstract translation: 用于图案形成的组合物包括嵌段共聚物和溶剂。 嵌段共聚物能够通过定向自组装形成相分离结构。 嵌段共聚物包括第一嵌段和第二嵌段。 第一块包括包含至少两个硅原子的第一重复单元。 第二块包括不包括硅原子的第二重复单元。 构成第一重复单元的原子的原子量之和不大于700。

公开(公告)号：US20150191829A1

公开(公告)日：2015-07-09

申请号：US14591323

申请日：2015-01-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: C23F1/02

CPC classification number: C23F1/02 ,  C08F297/02 ,  C09D153/00 ,  C23F1/12 ,  G03F7/0002 ,  H01L21/3081 ,  C08L83/04 ,  C08L25/08

Abstract: A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

Abstract translation: 图案形成方法包括直接或间接地在基底上提供含金属的膜。 直接或间接地在含金属膜上提供定向自组装膜，从而形成定向自组装膜的多个相。 定向自组装膜的多个相的至少一部分被去除，从而形成定向自组装膜的图案。 使用定向自组装膜的图案作为掩模，依次蚀刻含金属膜和基板。

公开(公告)号：US20140238956A1

公开(公告)日：2014-08-28

申请号：US14272587

申请日：2014-05-08

Applicant: JSR CORPORATION

Inventor： Yuji NAMIE ,  Shinya MINEGISHI ,  Tomoki NAGAI ,  Takuo SONE

IPC: G03F7/00

CPC classification number: C08F297/026 ,  B81C1/00031 ,  B81C2201/0149 ,  C08L53/005 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/70 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139

Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Abstract translation: 用于图案形成的定向自组装组合物包括嵌段共聚物。 嵌段共聚物包括具有苯乙烯单元的聚苯乙烯嵌段和具有（甲基）丙烯酸烷基酯单元的聚（甲基）丙烯酸烷基酯嵌段。 嵌段共聚物具有与嵌段共聚物的主链的至少一个末端结合并且包含杂原子的基团。

公开(公告)号：US20200004144A1

公开(公告)日：2020-01-02

申请号：US16569920

申请日：2019-09-13

Applicant: JSR CORPORATION

Inventor： Hisashi NAKAGAWA ,  Shinya MINEGISHI ,  Motohiro SHIRATANI

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: A radiation-sensitive composition contains: a compound that includes a metal and an oxygen atom, the metal and the oxygen atom being bonded by a covalent bond; and a solvent composition. The metal is a metal of an element belonging to any one of period 4 to period 7 of group 3 to group 15 in periodic table. The solvent contains: a first solvent having a viscosity at 20° C. of no greater than 10 mPa·s and a vapor pressure at 20° C. of no greater than 5 kPa; and a second solvent having a van der Waals volume of no greater than 150 Å3, and being different from the first solvent. The second solvent is: water; a monovalent alcohol represented by R1—OH; R2—COOH; or a combination thereof.

公开(公告)号：US20170088740A1

公开(公告)日：2017-03-30

申请号：US15374342

申请日：2016-12-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: C09D125/14 ,  G03F7/11 ,  C09D133/12 ,  G03F7/00

CPC classification number: C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

Abstract: A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200. (En-AD)m  (1)

公开(公告)号：US20150252216A1

公开(公告)日：2015-09-10

申请号：US14638844

申请日：2015-03-04

Applicant: JSR CORPORATION

Inventor： Shinya MINEGISHI ,  Takehiko NARUOKA ,  Tomoki NAGAI

IPC: C09D153/00

CPC classification number: C09D153/00 ,  C08F297/026 ,  G03F7/0002 ,  C08L33/14

Abstract: A pattern-forming method includes providing a coating film using a composition that includes: a first polymer which is a block copolymer; and a second polymer having a surface free energy lower than a surface free energy of the first polymer, such that the second polymer is unevenly distributed to be localized into a superficial layer region of the coating film. Phase separation is caused in the coating film along a direction substantially perpendicular to a thickness direction of the coating film such that at least a part of the coating film is converted into a directed self-assembling film which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

Abstract translation: 图案形成方法包括使用组合物提供涂膜，所述组合物包括：作为嵌段共聚物的第一聚合物; 以及具有比第一聚合物的表面自由能低的表面自由能的第二聚合物，使得第二聚合物不均匀地分布以定位在涂膜的表层层区域中。 在涂膜中沿着与涂膜的厚度方向大致垂直的方向引起相分离，使得至少一部分涂膜转化为包括多相的定向自组装膜。 去除定向自组装膜的多个相的一部分。

公开(公告)号：US20140248563A1

公开(公告)日：2014-09-04

申请号：US14273608

申请日：2014-05-09

Applicant: JSR CORPORATION

Inventor： Kiyoshi TANAKA ,  Shinya MINEGISHI ,  Kazunori KUSABIRAKI ,  Takahiro HAYAMA

IPC: G03F7/038

CPC classification number: G03F7/0388 ,  C07C69/734 ,  C07C2601/14 ,  C08F220/22 ,  C08F220/26 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

Abstract: A composition includes a polymer component including a first polymer having a first structural unit represented by a following formula (1), and a solvent. In the formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. R2 represents a single bond or a divalent organic group having 1 to 20 carbon atoms. R3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. RQ represents a perfluoroalkyl group having 1 to 5 carbon atoms. RX represents a hydrogen atom or a monovalent base-labile group.

Abstract translation: 组合物包括包含具有由下式（1）表示的第一结构单元的第一聚合物和溶剂的聚合物组分。 式（1）中，R 1表示氢原子或碳原子数1〜20的1价有机基团。 R2表示单键或碳原子数为1〜20的二价有机基团。 R3表示氢原子或碳原子数1〜20的1价有机基团。 RQ表示碳原子数1〜5的全氟烷基。 RX表示氢原子或一价碱基不稳定基团。

公开(公告)号：US20140220783A1

公开(公告)日：2014-08-07

申请号：US14249432

申请日：2014-04-10

Applicant: JSR Corporation

Inventor： Kazuhiko KOUMURA ,  Shinya MINEGISHI ,  Takashi MORI ,  Kyoyu YASUDA ,  Yoshio TAKIMOTO ,  Shinya NAKAFUJI ,  Toru KIMURA

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上提供抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括玻璃化转变温度为0至180℃的第一聚合物。在抗蚀剂下层膜的表面上提供硅基氧化物膜。 使用抗蚀剂组合物在硅基氧化膜的表面上设置抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次干蚀刻硅基氧化物膜和抗蚀剂下层膜。 使用干蚀刻抗蚀剂下层膜作为掩模对基板进行干蚀刻。

公开(公告)号：US20140093826A1

公开(公告)日：2014-04-03

申请号：US14032528

申请日：2013-09-20

Applicant: JSR CORPORATION

Inventor： Shinya MINEGISHI ,  Kiyoshi TANAKA ,  Kazunori KUSABIRAKI

IPC: G03F7/11 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F214/18 ,  C08F214/182 ,  C08F214/186 ,  C08F220/26 ,  C08L33/16 ,  C09D133/14 ,  G03F7/0046 ,  G03F7/2041 ,  C08F220/24 ,  C08F228/02 ,  C08F220/38

Abstract: A composition for forming a liquid immersion upper layer film includes a polymer component including a polymer having a structural unit represented by a formula (1); and a solvent. R1 represents a carboxy group or a group represented by a formula (2); X represents a single bond, a divalent hydrocarbon group having 1 to 20 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 20 carbon atoms; R2 represents a hydrocarbon group having 1 to 20 carbon atoms and a valency of (n+1), a fluorinated hydrocarbon group having 1 to 20 carbon atoms and a valency of (n+1), or one of these groups each including between adjacent two carbon atoms thereof —CO—, —COO—, —O—, —NR′—, —CS—, —S—, —SO—, —SO2— or a combination thereof; and R3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.

Abstract translation: 用于形成液浸上层膜的组合物包括含有具有由式（1）表示的结构单元的聚合物的聚合物组分; 和溶剂。 R1表示羧基或由式（2）表示的基团。 X表示单键，碳原子数1〜20的二价烃基或碳原子数1〜20的二价氟代烃基。 R 2表示碳原子数1〜20的烃基，（n + 1）的化合价，碳原子数1〜20的氟代烃基，（n + 1）的化合价， -CO - ， - CO-， - O - ， - NR' - ， - S-，-S - ， - SO - ， - SO 2 - 或其组合的两个碳原子; R3表示氢原子或碳原子数1〜20的1价有机基团。

公开(公告)号：US20130101942A1

公开(公告)日：2013-04-25

申请号：US13630245

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Hiromitsu TANAKA ,  Kazunori TAKANASHI ,  Shinya MINEGISHI ,  Takashi MORI ,  Tomoaki SEKO ,  Jyunya SUZUKI

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/091 ,  G03F7/325

Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

Abstract translation: 一种抗蚀剂图案形成方法，其能够形成在多层抗蚀剂工艺中用有机溶剂显影的情况下图案抗塌陷性优异的抗蚀剂图案。 该方法具有以下步骤：（1）使用形成抗蚀剂下层膜的组合物在基板上形成抗蚀剂下层膜; （2）使用光致抗蚀剂组合物在抗蚀剂下层膜上提供抗蚀剂膜; （3）曝光抗蚀膜; （4）使用含有不少于80质量％的有机溶剂的显影剂溶液显影曝光的抗蚀剂膜，其中形成抗蚀剂下层膜的组合物含有（A）包含聚硅氧烷链的组分，并且具有 羧基，可以通过酸，酸酐基或其组合产生羧基的基团。