公开(公告)号：US20210257402A1

公开(公告)日：2021-08-19

申请号：US17167081

申请日：2021-02-04

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Akihiro HANADA ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Fumiya KIMURA ,  Isao SUZUMURA

IPC分类号： H01L27/146

摘要： The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.

公开(公告)号：US20210011536A1

公开(公告)日：2021-01-14

申请号：US17034722

申请日：2020-09-28

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Hajime WATAKABE ,  Kazufumi WATABE

IPC分类号： G06F1/26 ,  H01L27/12 ,  H04L12/24 ,  H04L12/853 ,  H04L29/08

摘要： According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

公开(公告)号：US20200251505A1

公开(公告)日：2020-08-06

申请号：US16852925

申请日：2020-04-20

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Isao SUZUMURA ,  Akihiro HANADA ,  Yohei YAMAGUCHI

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

摘要： A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US20190244979A1

公开(公告)日：2019-08-08

申请号：US15929125

申请日：2019-04-18

申请人： Japan Display Inc.

发明人： Isao SUZUMURA ,  Yohei YAMAGUCHI ,  Hajime WATAKABE ,  Akihiro HANADA ,  Hirokazu WATANABE ,  Marina SHIOKAWA

IPC分类号： H01L27/12 ,  H01L29/49 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4763 ,  H01L21/465

CPC分类号： H01L27/1225 ,  G02F1/133305 ,  G02F1/13452 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2202/10 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/465 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4983 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

摘要： A display device to improve reliability of the TFT of the oxide semiconductor, including: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

公开(公告)号：US20220278137A1

公开(公告)日：2022-09-01

申请号：US17747049

申请日：2022-05-18

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786

摘要： There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20210405411A1

公开(公告)日：2021-12-30

申请号：US17471881

申请日：2021-09-10

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC分类号： G02F1/1368 ,  G02F1/1362 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

摘要： A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20210066351A1

公开(公告)日：2021-03-04

申请号：US16986462

申请日：2020-08-06

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66

摘要： There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20190129227A1

公开(公告)日：2019-05-02

申请号：US16153861

申请日：2018-10-08

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Isao SUZUMURA ,  Hajime WATAKABE

IPC分类号： G02F1/1333 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  H01L27/12 ,  G09F9/30 ,  H05K1/18

摘要： The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.

公开(公告)号：US20180122835A1

公开(公告)日：2018-05-03

申请号：US15723300

申请日：2017-10-03

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Isao SUZUMURA ,  Hirokazu WATANABE ,  Akihiro HANADA

IPC分类号： H01L27/12 ,  H01L21/311 ,  H01L21/473 ,  H01L21/4757

CPC分类号： G02F1/1368 ,  G02F2001/13685 ,  H01L21/473 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50

摘要： A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US20170162715A1

公开(公告)日：2017-06-08

申请号：US15371897

申请日：2016-12-07

申请人： Japan Display Inc.

发明人： Takashi OKADA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Akihiro HANADA

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： According to one embodiment, a method of manufacturing a thin film transistor, includes forming an island-like first insulating layer containing oxygen above an insulating substrate, forming an oxide semiconductor layer above the insulating substrate and the first insulating layer and in contact with the first insulating layer, and performing heat treatment to supply oxygen from the first insulating layer to an overlapping area of the oxide semiconductor layer, which is overlaid on the first insulating layer.