公开(公告)号：US08901011B2

公开(公告)日：2014-12-02

申请号：US13104626

申请日：2011-05-10

申请人： Masanori Sakai ,  Tomohiro Yoshimura

发明人： Masanori Sakai ,  Tomohiro Yoshimura

IPC分类号： H01L21/469 ,  C23C14/54 ,  C23C16/455 ,  C23C16/509 ,  H01L21/67 ,  C23C16/458 ,  C23C16/34

CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/509 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67253

摘要： Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

摘要翻译： 公开了一种基板处理装置，包括：处理基板的处理室; 用于旋转衬底的衬底旋转机构; 用于向基板供给气体的气体供给单元，至少两种气体A和B交替地供给多次以在基板上形成所需的膜; 以及控制器，用于控制衬底的旋转周期或气体供给周期，其被定义为当气体A被制造流动的时刻与下一次气体A流动的时刻之间的时间段，使得旋转周期 并且至少在交替气体供给被执行预定次数时，气体供给周期不彼此同步。

公开(公告)号：US08614147B2

公开(公告)日：2013-12-24

申请号：US12801127

申请日：2010-05-24

申请人： Masanori Sakai ,  Tatsuyuki Saito

发明人： Masanori Sakai ,  Tatsuyuki Saito

IPC分类号： H01L21/443

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76862

摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.

摘要翻译： 通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在 在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。

公开(公告)号：US08366868B2

公开(公告)日：2013-02-05

申请号：US13489018

申请日：2012-06-05

申请人： Kazuyuki Okuda ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki Okuda ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02057 ,  H01L21/67253

摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

摘要翻译： 一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管， 反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点 反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

公开(公告)号：US20130022860A1

公开(公告)日：2013-01-24

申请号：US13581657

申请日：2010-12-27

申请人： Satoshi Minoura ,  Toshio Shibahara ,  Masanori Sakai ,  Koji Kogure

发明人： Satoshi Minoura ,  Toshio Shibahara ,  Masanori Sakai ,  Koji Kogure

IPC分类号： H01M4/583 ,  H01M4/60 ,  H01M2/00

CPC分类号： H01M4/14 ,  H01M2/1666 ,  H01M4/625 ,  H01M4/628 ,  H01M10/06 ,  H01M2004/021 ,  Y02E60/126 ,  Y02T10/7016

摘要： A flooded-type lead acid storage battery in which charging is intermittently carried out in a short period of time and high-efficiency discharge to a load is carried out in a partial state of charge, wherein the charge acceptance and service life characteristics are improved by using a positive plate in which the specific surface area of the active material is set to 6 m2/g or more; a negative plate with improved charge acceptance and service life performance obtained by adding a carbonaceous electrically conductive material, and a bisphenol aminobenzenesulfonic acid formaldehyde condensate to the negative active material; and a separator formed from a nonwoven in which the surface facing the negative plate is composed of material selected from glass, pulp, and polyolefin.

摘要翻译： 在部分充电状态下进行在短时间内间歇地进行充电并对负载进行高效率放电的淹水式铅酸蓄电池，其中充电接收和使用寿命特性通过 使用将活性物质的比表面积设定为6m 2 / g以上的正极板; 通过向负极活性物质中添加碳质导电材料和双酚氨基苯磺酸甲醛缩合物而获得的具有改善的电荷接受性和使用寿命性能的负极板; 以及由非织造材料形成的隔板，其中面向负极板的表面由选自玻璃，纸浆和聚烯烃的材料构成。

公开(公告)号：US08261692B2

公开(公告)日：2012-09-11

申请号：US12823001

申请日：2010-06-24

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/50 ,  C23C16/509 ,  C23C16/503 ,  C23C16/505 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US08257093B2

公开(公告)日：2012-09-04

申请号：US13019647

申请日：2011-02-02

申请人： Masanori Sakai ,  Taro Fuchigami

发明人： Masanori Sakai ,  Taro Fuchigami

IPC分类号： H01R12/00

CPC分类号： H01R12/00

摘要： Connector jacks are surface-mounted on one surface of a substrate. A reinforcing member reinforces the connector jacks. On the reinforcing member, a first reinforcing part, which is in contact with the back of the surface of the substrate on which the connector jack is mounted, and second reinforcing parts, which elastically urge the top surface of the connector jacks, are formed.

摘要翻译： 连接器插座表面安装在基板的一个表面上。 加强构件加强连接器插座。 在加强构件上形成有与安装有连接器插座的基板的表面的背面接触的第一加强部和弹性地推压连接器插座的顶面的第二加强部。

公开(公告)号：US08227346B2

公开(公告)日：2012-07-24

申请号：US13306654

申请日：2011-11-29

申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/44

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US08211802B2

公开(公告)日：2012-07-03

申请号：US12954369

申请日：2010-11-24

申请人： Kazuyuki Okuda ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki Okuda ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： H01L21/306 ,  B08B13/00

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02057 ,  H01L21/67253

摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

摘要翻译： 一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管， 反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点 反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

公开(公告)号：US20120077350A1

公开(公告)日：2012-03-29

申请号：US13306654

申请日：2011-11-29

申请人： Hironobu MIYA ,  Kazuyuki TOYODA ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

发明人： Hironobu MIYA ,  Kazuyuki TOYODA ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

IPC分类号： H01L21/31

CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序， 第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步， 去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为 反应位点，其中第一至第五步骤重复预定时间。

公开(公告)号：US20110130001A1

公开(公告)日：2011-06-02

申请号：US12954369

申请日：2010-11-24

申请人： Kazuyuki OKUDA ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki OKUDA ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： H01L21/306 ,  B08B13/00

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02057 ,  H01L21/67253

摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

摘要翻译： 一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管， 反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点 反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。