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    Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information
    11.
    发明申请
    Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information 有权
    使用缺陷特定和多通道信息检测晶片上的缺陷

    公开(公告)号：US20160027165A1

    公开(公告)日：2016-01-28

    申请号：US14811409

    申请日：2015-07-28

    Applicant: KLA-Tencor Corporation

    Inventor： Kenong Wu ,  Lisheng Gao ,  Grace Hsiu-Ling Chen ,  David W. Shortt

    IPC: G06T7/00 ,  H01L21/66 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956

    CPC classification number: G06T7/0008 ,  G01N21/8806 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8822 ,  G01N2021/8848 ,  G06T7/001 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/34

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.

    Abstract translation: 提供了使用缺陷特定和多信道信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括形成在晶片上的感兴趣模式（POI）和在POI附近或在POI中出现的已知感兴趣缺陷（DOI）。 该方法还包括通过基于由检查系统的第一通道获取的目标候选者的图像来识别潜在的DOI位置来检测目标候选中的已知DOI，并将一个或多个检测参数应用于由第二个所获取的潜在DOI位置的图像 检查系统通道。 因此，用于定位潜在DOI位置的图像和用于检测缺陷的图像可以不同。

    Wafer inspection using free-form care areas
    12.
    发明授权
    Wafer inspection using free-form care areas 有权
    晶圆检查使用自由形式护理区域

    公开(公告)号：US09171364B2

    公开(公告)日：2015-10-27

    申请号：US14168011

    申请日：2014-01-30

    Applicant: KLA-Tencor Corporation

    Inventor： Kenong Wu ,  Tao Luo ,  Lisheng Gao ,  Eugene Shifrin ,  Aravindh Balaji

    IPC: G06K9/00 ,  G06T7/00

    CPC classification number: G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Methods and systems for detecting defects on a wafer are provided. One method includes determining characteristics of care areas for a wafer based on wafer patterns. Determining the characteristics includes determining locations of care areas, identifying at least one pattern of interest (POI) in the wafer patterns for each of the care areas, allowing any of the care areas to have a free-form shape, allowing the care areas to be larger than frame images and selecting two or more POIs for at least one of the care areas. The method also includes searching for POIs in images generated for the wafer using an inspection system. In addition, the method includes detecting defects on the wafer by determining positions of the care areas in the images and applying one or more defect detection methods to the images based on the positions of the care areas in the images.

    Abstract translation: 提供了用于检测晶片上的缺陷的方法和系统。 一种方法包括基于晶片图案确定晶片护理区域的特征。 确定特征包括确定护理区域的位置，为每个护理区域确定晶片图案中的至少一个感兴趣模式（POI），允许任何护理区域具有自由形状，允许护理区域 大于框架图像并且为至少一个护理区域选择两个或更多个POI。 该方法还包括使用检查系统搜索为晶片生成的图像中的POI。 此外，该方法包括通过确定图像中的护理区域的位置并基于图像中的护理区域的位置将一个或多个缺陷检测方法应用于图像来检测晶片上的缺陷。

    Detecting defects on a wafer
    13.
    发明授权
    Detecting defects on a wafer 有权
    检测晶圆上的缺陷

    公开(公告)号：US09053527B2

    公开(公告)日：2015-06-09

    申请号：US13733133

    申请日：2013-01-02

    Applicant: KLA-Tencor Corporation

    Inventor： Jun Lang ,  Kan Chen ,  Lisheng Gao ,  Junqing Huang

    IPC: G06K9/00 ,  G06T7/00 ,  G03F7/20 ,  G01N21/88 ,  G01N21/95

    CPC classification number: G06T7/0004 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/8867 ,  G03F7/70616 ,  G03F7/7065 ,  G06T7/0008 ,  G06T2207/10152 ,  G06T2207/30148

    Abstract: Methods and systems for detecting defects on a wafer are provided. One method includes identifying one or more characteristics of first raw output generated for a wafer that correspond to one or more geometrical characteristics of patterned features formed on the wafer and assigning individual output in second raw output generated for the wafer to different segments based on the identified one or more characteristics of the first raw output and based on the individual output in the second raw output and individual output in the first raw output that were generated at substantially the same locations on the wafer such that the one or more geometrical characteristics of the patterned features that correspond to each of the different segments in the second raw output are different.

    Abstract translation: 提供了用于检测晶片上的缺陷的方法和系统。 一种方法包括识别对应于晶片上形成的图案化特征的一个或多个几何特征的晶片产生的第一原始输出的一个或多个特征，并且基于所识别的将针对晶片生成的第二原始输出中的各个输出分配给不同的段 第一原始输出的一个或多个特征，并且基于第二原始输出中的单独输出和在第一原始输出中在晶片上的基本相同位置处产生的单独输出，使得图案化的一个或多个几何特征 对应于第二原始输出中的每个不同段的特征是不同的。

    Method and System for Correlating Optical Images with Scanning Electron Microscopy Images
    14.
    发明申请
    Method and System for Correlating Optical Images with Scanning Electron Microscopy Images 审中-公开
    将光学图像与扫描电子显微镜图像相关联的方法和系统

    公开(公告)号：US20150125065A1

    公开(公告)日：2015-05-07

    申请号：US14506407

    申请日：2014-10-03

    Applicant: KLA-Tencor Corporation

    Inventor： Hucheng Lee ,  Lisheng Gao ,  Jan Lauber ,  Yong Zhang

    IPC: G06T7/00 ,  G06T5/00

    CPC classification number: G06T7/001 ,  G06T5/00 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28

    Abstract: The correlation of optical images with SEM images includes acquiring a full optical image of a sample by scanning the sample with an optical inspection sub-system, storing the full optical image, identifying a location of a feature-of-interest present in the full optical image with an additional sources, acquiring an SEM image of a portion of the sample that includes the feature at the identified location with a SEM tool, acquiring an optical image portion at the location identified by the additional source, the image portions including a reference structure, correlating the image portion and the SEM image based on the presence of the feature-of-interest and the reference structure in both the image portions and the SEM image, and transferring a location of the feature-of-interest in the SEM image into the coordinate system of the image portion of the full optical image to form a corrected optical image.

    Abstract translation: 光学图像与SEM图像的相关性包括通过用光学检查子系统扫描样本来获取样品的全部光学图像，存储全部光学图像，识别存在于全光学中的感兴趣特征的位置 具有附加源的图像，使用SEM工具获取包括所述特征的所述特征的一部分的SEM图像，获取由所述附加源识别的位置处的光学图像部分，所述图像部分包括参考结构 ，基于图像部分和SEM图像两者中感兴趣特征和参考结构的存在，将图像部分和SEM图像相关联，并将感兴趣特征的位置转移到SEM图像中 全光学图像的图像部分的坐标系，以形成校正的光学图像。

    Nuisance Reduction Using Location-Based Attributes
    16.
    发明申请
    Nuisance Reduction Using Location-Based Attributes 审中-公开

    公开(公告)号：US20190050974A1

    公开(公告)日：2019-02-14

    申请号：US15858511

    申请日：2017-12-29

    Applicant: KLA-Tencor Corporation

    Inventor： Bjorn Brauer ,  Junqing Huang ,  Lisheng Gao

    IPC: G06T7/00 ,  G06T7/73

    Abstract: Methods and systems are disclosed that provide nuisance reduction in images, such as semiconductor images that include one or more metal lines. A potential defect is correlated against pixel grey level intensity charts for two perpendicular axes. A position of the potential defect relative to a pattern, such as a metal line, is determined along the two axes. The potential defect can be classified as a defect of interest or nuisance event.

    SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER
    18.
    发明申请
    SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER 审中-公开

    公开(公告)号：US20180202943A1

    公开(公告)日：2018-07-19

    申请号：US15865130

    申请日：2018-01-08

    Applicant: KLA-Tencor Corporation

    Inventor： Lu Chen ,  Jason Kirkwood ,  Mohan Mahadevan ,  James A. Smith ,  Lisheng Gao ,  Junqing (Jenny) Huang ,  Tao Luo ,  Richard Wallingford

    IPC: G01N21/95 ,  H01L21/66 ,  G01N21/88

    CPC classification number: G01N21/9501 ,  G01N2021/887 ,  H01L22/12

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

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