Abstract:
A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.
Abstract:
A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.
Abstract:
A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.
Abstract:
A method according to embodiments of the invention includes providing a plurality of LEDs attached to a mount. A filter is attached to at least one of the plurality of LEDs. A protective layer is formed over the filter. A reflective layer is formed over the mount. A portion of the reflective layer disposed over the protective layer is removed.
Abstract:
A ceramic green wavelength conversion element (120) is coated with a red wavelength conversion material (330) and placed above a blue light emitting element (110) such that the ceramic element (120) is attached to the light emitting element (110), thereby providing an efficient thermal coupling from the red and green converters (330, 120) to the light emitting element (110) and its associated heat sink. To protect the red converter coating (330) from the effects of subsequent processes, a sacrificial clear coating (340) is created above the red converter element (330). This clear coating (340) may be provided as a discrete layer of clear material, or it may be produced by allowing the red converters to settle to the bottom of its suspension material, thereby forming a converter-free upper layer that can be subjected to the subsequent fabrication processes.
Abstract:
In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.