利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.026 秒)

    Non-volatile memory and fabrication method thereof
    12.
    发明授权
    Non-volatile memory and fabrication method thereof 有权
    非易失性存储器及其制造方法

    公开(公告)号：US07023014B2

    公开(公告)日：2006-04-04

    申请号：US10716621

    申请日：2003-11-20

    申请人： Kiyoshi Morimoto ,  Hideyuki Tanaka ,  Takashi Ohtsuka ,  Akihito Miyamoto

    发明人： Kiyoshi Morimoto ,  Hideyuki Tanaka ,  Takashi Ohtsuka ,  Akihito Miyamoto

    IPC分类号： H01L29/18

    CPC分类号： G11C13/0004 ,  H01L27/0814 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1666 ,  H01L45/1675

    摘要： The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.

    摘要翻译： 本发明涉及一种非易失性存储器，包括：第一电极（11）; 第二电极（12）; 以及夹在第一电极（11）和第二电极（12）之间的相变记录介质（14），其中通过在第一电极（11）和第二电极（12）上施加电脉冲来改变电阻值 ），第一电极（11）和第二电极（12）中的至少一个包含选自钌，铑和锇中的至少一种元素和相变记录介质（14）作为主要成分， 由含有硫族元素的相变材料形成。 这种非易失性存储器通过防止由施加电流引起的性能劣化（即，电极和相变记录介质之间的相互杂质扩散）而显示出改进的耐久性和可靠性。

    Vertical organic FET and method for manufacturing same
    13.
    发明申请
    Vertical organic FET and method for manufacturing same 审中-公开
    垂直有机FET及其制造方法

    公开(公告)号：US20060043363A1

    公开(公告)日：2006-03-02

    申请号：US11260186

    申请日：2005-10-28

    申请人： Akihito Miyamoto

    发明人： Akihito Miyamoto

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0508 ,  H01L51/0078 ,  H01L51/057

    摘要： The present invention provides a vertical organic FET with increased carrier mobility and suppressed molecular orientation of an active layer composed of an organic semiconductor. The present invention relates to a vertical organic FET having a structure in which at least a source electrode layer, a drain electrode layer, a gate electrode, and an active layer are provided on a substrate, and the source electrode layer, the active layer, and the drain electrode layer are laminated in that order, wherein (1) the source electrode layer and the drain electrode layer are disposed substantially parallel to the substrate plane, (2) the source electrode layer and the drain electrode layer are electroconductive members, (3) the active layer is substantially constituted by a phthalocyanine compound that has a tetravalent or hexavalent element as its central atom and in which ligands X1 and X2 coordinate up and down, respectively, from the molecular plane, and (4) the compound is layered such that the molecular plane of each molecule of the compound is in a substantially parallel state with respect to the source electrode layer and/or the drain electrode layer.

    摘要翻译： 本发明提供了具有增加的载流子迁移率和抑制由有机半导体构成的有源层的分子取向的垂直有机FET。 本发明涉及一种垂直有机FET，其具有在基板上至少设置有源极电极层，漏极电极层，栅电极和有源层的构造，源电极层，有源层， 和漏极电极层按顺序层叠，其中（1）源电极层和漏极电极层基本平行于基板平面设置，（2）源电极层和漏电极层是导电构件（ 3）活性层基本上由具有四价或六价元素作为其中心原子并且其中X 1和X 2和X 2配位的酞菁化合物上下协调 ，（4）化合物层叠，使得化合物的每个分子的分子平面相对于源极电极层和/或漏极电极基本平行的状态 ode层。

    Thin-film transistor and method of manufacturing the same
    16.
    发明授权
    Thin-film transistor and method of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09018704B2

    公开(公告)日：2015-04-28

    申请号：US14113971

    申请日：2011-10-20

    申请人： Takaaki Ukeda ,  Akihito Miyamoto

    发明人： Takaaki Ukeda ,  Akihito Miyamoto

    IPC分类号： H01L27/32 ,  H01L29/786 ,  H01L51/05 ,  H01L27/28 ,  H01L29/66 ,  H01L27/12 ,  H01L51/00

    CPC分类号： H01L29/786 ,  H01L27/1255 ,  H01L27/283 ,  H01L29/6675 ,  H01L29/66772 ,  H01L51/0078 ,  H01L51/0529

    摘要： The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.

    摘要翻译： 根据本发明的有机薄膜晶体管包括：第一区域中的衬底上的栅极电极线：第二区域中的第一信号线层; 覆盖所述栅电极线和所述第一信号线层的栅极绝缘膜; 栅极绝缘膜上的堤层; 在第一信号线上的堤层上的第二信号线层; 漏极电极和源电极线，其位于所述堤层和所述第一区域中的所述堤层之间的至少一个开口中; 至少位于开口中并由堤层，漏电极和源极线排列的半导体层; 以及覆盖半导体层的保护膜。

    Brush holder device and method of molding same
    17.
    发明授权
    Brush holder device and method of molding same 失效
    刷架装置及其成型方法

    公开(公告)号：US5717271A

    公开(公告)日：1998-02-10

    申请号：US570669

    申请日：1995-12-11

    申请人： Susumu Aoki ,  Hideki Furuuchi ,  Akihito Miyamoto

    发明人： Susumu Aoki ,  Hideki Furuuchi ,  Akihito Miyamoto

    IPC分类号： H01R39/38 ,  H01R39/40 ,  H01R43/18 ,  H01R43/24 ,  H02K5/14 ,  H02K5/22 ,  H02K15/14 ,  H02K13/00

    CPC分类号： H01R39/40 ,  H01R39/38 ,  H02K5/148 ,  H01R43/18 ,  H01R43/24 ,  H02K15/14 ,  H02K5/225

    摘要： Deformation absorbing grooves 16a are recessedly provided on the inner surfaces of both side walls 15a of a main body 15 of a brush holder made of resin in the sliding direction of a brush 44, and brush holding surface portions 16b holding both end edge portions of the outer surfaces of the brush are formed at edge portions of the grooves 16a on the inner surfaces of the side walls 15a. A pair of first reinforcing ribs 16c are projectingly provided at closing end sides of cutaway portions 18 and 19 on the outer surfaces of the both side walls 15a in the sliding direction of the brush, a pair of second reinforcing ribs 16d are projectingly provided at both top sides of the outer surface of a top side wall 15d for closing an end surface across the tops of the both side walls in the sliding direction of the brush, and an end portion 46a on the reaction side of a torsion spring 46 is engaged with an engageable portion 21A projectingly provided on the first reinforcing rib 16c.

    摘要翻译： 变形吸收槽16a凹陷地设置在电刷44的滑动方向上由树脂制的电刷架的主体15的两个侧壁15a的内表面上，以及保持两个端部边缘部分的刷保持表面部分16b 刷子的外表面形成在侧壁15a的内表面上的凹槽16a的边缘部分。 一对第一加强筋16c在刷子的滑动方向上突出地设置在两侧壁15a的外表面上的切口部分18和19的闭合端侧，一对第二加强肋16d突出地设置在两个 在顶侧壁15d的外表面的顶侧，用于在刷子的滑动方向上跨过两个侧壁的顶部封闭端面，并且扭簧46的反作用侧上的端部46a与 突出地设置在第一加强筋16c上的可接合部分21A。