公开(公告)号：US20110236754A1

公开(公告)日：2011-09-29

申请号：US13050978

申请日：2011-03-18

申请人： Kazutaka KURIKI ,  Tamae MORIWAKA ,  Satoshi MURAKAMI

发明人： Kazutaka KURIKI ,  Tamae MORIWAKA ,  Satoshi MURAKAMI

IPC分类号： H01M4/134 ,  H01M4/1395

CPC分类号： H01M4/134 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/661 ,  H01M4/662 ,  H01M4/667 ,  Y10T29/49108 ,  Y10T29/49115

摘要： An object is to provide a secondary battery having excellent charge-discharge cycle characteristics. A secondary battery including an electrode containing silicon or a silicon compound is provided, in which the electrode is provided with a layer containing silicon or a silicon compound over a layer of a metal material; a mixed layer of the metal material and the silicon is provided between the metal material layer and the layer containing silicon or a silicon compound; the metal material has higher oxygen affinity than that of ions which give and receive electric charges in the secondary battery; and an oxide of the metal material does not have an insulating property. The ions which give and receive electric charges are alkali metal ions or alkaline earth metal ions.

摘要翻译： 目的在于提供具有优异的充放电循环特性的二次电池。 提供了包括含有硅或硅化合物的电极的二次电池，其中电极在金属材料层上设置有含硅或硅化合物的层; 在金属材料层和含硅或硅化合物的层之间设置金属材料和硅的混合层; 金属材料具有比在二次电池中产生和接收电荷的离子更高的氧亲和力; 金属材料的氧化物不具有绝缘性。 产生和接收电荷的离子是碱金属离子或碱土金属离子。

公开(公告)号：US20110236567A1

公开(公告)日：2011-09-29

申请号：US13038413

申请日：2011-03-02

申请人： Kazutaka KURIKI

发明人： Kazutaka KURIKI

IPC分类号： B05D5/12 ,  B05D3/00 ,  C23C14/36 ,  C23C14/06

CPC分类号： H01G11/44 ,  H01G11/28 ,  H01G11/86 ,  Y02E60/13

摘要： Provided are a method of forming a carbon film which has a reduced number of steps and improved productivity without needing a high-temperature process, and a method of forming an electrode which does not need a binder. A fluororesin film is formed on a surface of a collector, and a surface of the fluororesin film is contacted with an alkali metal such as lithium to perform defluorination and then washed with acid. By this processing, lithium (Li) chemically reacts with fluorine (F) in the fluororesin film, and lithium fluoride (LiF) is generated. Consequently, the fluororesin film is defluorinated, whereby an electrode having a carbon film is formed.

摘要翻译： 提供一种形成碳膜的方法，其具有减少的步骤数量和提高的生产率而不需要高温处理，以及形成不需要粘合剂的电极的方法。 在集电体的表面上形成氟树脂膜，使氟树脂膜的表面与锂等碱金属接触，进行脱氟，然后用酸洗。 通过该处理，锂（Li）在氟树脂膜中与氟（F）发生化学反应，产生氟化锂（LiF）。 因此，氟树脂膜被脱氟，由此形成具有碳膜的电极。

公开(公告)号：US20100327281A1

公开(公告)日：2010-12-30

申请号：US12820201

申请日：2010-06-22

申请人： Miyako NAKAJIMA ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Erika KATO ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI

发明人： Miyako NAKAJIMA ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Erika KATO ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

摘要翻译： 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。

公开(公告)号：US20090098739A1

公开(公告)日：2009-04-16

申请号：US12244414

申请日：2008-10-02

申请人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/31

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.

摘要翻译： 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。 在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

公开(公告)号：US20120282757A1

公开(公告)日：2012-11-08

申请号：US13467082

申请日：2012-05-09

申请人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

发明人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.

摘要翻译： 制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

公开(公告)号：US20110300445A1

公开(公告)日：2011-12-08

申请号：US13111079

申请日：2011-05-19

申请人： Satoshi MURAKAMI ,  Kazutaka KURIKI ,  Mikio YUKAWA

发明人： Satoshi MURAKAMI ,  Kazutaka KURIKI ,  Mikio YUKAWA

IPC分类号： H01M4/58 ,  C23C16/24 ,  H01G9/00 ,  H01M4/1395 ,  H01G9/042

CPC分类号： H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01G11/46 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/48 ,  H01M4/52 ,  H01M4/661 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T29/49115

摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.

摘要翻译： 能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。 蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。 结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。 晶须状结晶硅区域包括具有弯曲或分支部分的突起。

公开(公告)号：US20110212363A1

公开(公告)日：2011-09-01

申请号：US13033877

申请日：2011-02-24

申请人： Shunpei YAMAZAKI ,  Tamae MORIWAKA ,  Kazutaka KURIKI ,  Mikio YUKAWA

发明人： Shunpei YAMAZAKI ,  Tamae MORIWAKA ,  Kazutaka KURIKI ,  Mikio YUKAWA

IPC分类号： H01M10/26 ,  H01G9/00 ,  H01M4/48 ,  H01M4/505 ,  H01G9/042 ,  H01M4/26 ,  B82Y99/00

CPC分类号： H01G11/26 ,  H01G11/28 ,  H01G11/32 ,  H01G11/46 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/587 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0561 ,  H01M2004/021 ,  Y02E60/13 ,  Y10T29/417 ,  Y10T29/49108 ,  Y10T29/49115

摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

摘要翻译： 本发明涉及一种蓄电系统，其包括负极，该负极具有在集电体的表面上设置为负极活性物质的结晶硅膜，并且在结晶硅膜的表层部分中含有导电氧化物。 或者，本发明涉及一种用于制造蓄电系统的方法，其包括在集电器上形成非晶硅膜的步骤，将非晶硅的结晶的催化元素添加到非晶硅的表面上 加热非晶硅膜，加入催化剂元素使非晶硅膜结晶，从而形成结晶硅膜，并使用结晶硅膜作为负极活性物质层。

公开(公告)号：US20110115045A1

公开(公告)日：2011-05-19

申请号：US13008241

申请日：2011-01-18

申请人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

发明人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

IPC分类号： H01L23/14

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface.

摘要翻译： 提供了可以制造具有优异的电特性和高可靠性的半导体器件的衬底。 本发明的一个方面是一种用于制造半导体器件制造用基板的方法：将第一氧化硅膜，氮化硅膜和第二氧化硅膜依次层叠在半导体基板的表面上， CVD法，然后在半导体衬底的给定深度处形成弱化层; 半导体衬底和具有绝缘表面的衬底被布置成彼此面对，并且设置用于半导体衬底和支撑衬底的第二氧化硅膜彼此接合; 并且通过热处理在弱化层处分离半导体衬底，由此将与半导体衬底分离的半导体膜留在具有绝缘表面的衬底上。

公开(公告)号：US20110097877A1

公开(公告)日：2011-04-28

申请号：US12908228

申请日：2010-10-20

申请人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

发明人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

IPC分类号： H01L21/205 ,  C23C16/513

CPC分类号： H01L21/02532 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.

摘要翻译： 提供了一种以高质量生产率制造微晶半导体层的技术。 在等离子体CVD装置的反应室中，上部电极和下部电极彼此平行地设置。 在上部电极中形成中空部，上部电极具有形成在上部电极的与下部电极相对的面上形成的多个孔的喷淋板。 衬底设置在下电极上。 含有沉积气体和氢气的气体从淋浴板通过上部电极的中空部分供应到反应室，并且稀有气体从不同于上部电极的部分供应到反应室。 因此，向上部电极提供高频电力以产生等离子体，从而在基板上形成微晶半导体层。

公开(公告)号：US20100120225A1

公开(公告)日：2010-05-13

申请号：US12692768

申请日：2010-01-25

申请人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

发明人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.

摘要翻译： 即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。 另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。 制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。