公开(公告)号：US20060292728A1

公开(公告)日：2006-12-28

申请号：US11473122

申请日：2006-06-23

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B33/06 ,  H01L21/00 ,  H01L33/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US20060254516A1

公开(公告)日：2006-11-16

申请号：US11489522

申请日：2006-07-20

申请人： Minoru Karasawa ,  Keiji Ishibashi ,  Masahiko Tanaka

发明人： Minoru Karasawa ,  Keiji Ishibashi ,  Masahiko Tanaka

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67098 ,  C23C16/24 ,  C23C16/44

摘要： A heating element CVD system and a heating element CVD method which are capable of forming a high quality polycrystalline silicon film (polysilicon film) as a device in the case of producing a silicon film by using a heating element CVD system. The heating element CVD system and the heating element CVD method heat and maintain the inner surface of the structure surrounding the space between the substrate holder and the heating element to be at least 200° C. or higher, preferably at least 350° C. or higher during the formation of the silicon film on the substrate.

摘要翻译： 能够通过使用加热元件CVD系统制造硅膜的情况下能够形成高品质多晶硅膜（多晶硅膜）的加热元件CVD系统和加热元件CVD方法。 加热元件CVD系统和加热元件CVD法加热并保持围绕衬底保持器和加热元件之间的空间的结构的内表面至少为200℃以上，优选为至少350℃，或者 在衬底上形成硅膜时更高。

公开(公告)号：US20060003134A1

公开(公告)日：2006-01-05

申请号：US11148239

申请日：2005-06-09

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： B32B9/00

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时， 在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中， 通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积） 至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积 电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗 提供了可以获得AlN衬底的方法。

公开(公告)号：US5047417A

公开(公告)日：1991-09-10

申请号：US354306

申请日：1989-05-19

申请人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Megumi Ikemori ,  Toshiaki Ogawa ,  Takanori Kawamura

发明人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Megumi Ikemori ,  Toshiaki Ogawa ,  Takanori Kawamura

IPC分类号： C07C233/40 ,  C07C235/34 ,  C07C235/36 ,  C07C237/12 ,  C07C237/20 ,  C07C255/41 ,  C07C255/57 ,  C07C317/44 ,  C07C323/62 ,  C07D207/08 ,  C07D207/32 ,  C07D207/327 ,  C07D207/38 ,  C07D211/22 ,  C07D211/34 ,  C07D211/58 ,  C07D211/86 ,  C07D213/38 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D223/16 ,  C07D231/12 ,  C07D233/56 ,  C07D233/61 ,  C07D235/06 ,  C07D237/14 ,  C07D241/18 ,  C07D249/08 ,  C07D263/32 ,  C07D277/22 ,  C07D277/30 ,  C07D317/58 ,  C07D317/60 ,  C07D319/18 ,  C07D405/06 ,  C07D471/04 ,  C07D521/00

CPC分类号： C07D207/08 ,  C07C233/40 ,  C07C235/34 ,  C07C235/36 ,  C07C237/12 ,  C07C237/20 ,  C07C255/41 ,  C07C255/57 ,  C07C317/44 ,  C07C323/62 ,  C07D207/327 ,  C07D207/38 ,  C07D211/22 ,  C07D211/34 ,  C07D211/58 ,  C07D211/86 ,  C07D213/38 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D223/16 ,  C07D231/12 ,  C07D233/56 ,  C07D235/06 ,  C07D237/14 ,  C07D241/18 ,  C07D249/08 ,  C07D263/32 ,  C07D277/30 ,  C07D317/58 ,  C07D317/60 ,  C07D319/18 ,  C07D405/06 ,  C07D471/04 ,  C07C2101/08

摘要： A butenoic or propenoic acid derivative having the following formula in which G is an aryl or a heterocyclic ring, R11 and R12 are hydrogen or an alkyl, X is sulfur or oxygen, R2 and R3 are hydrogen, an substituent such as an alkyl and J is pyridyl or phenyl having substituents and a heterocyclic ring may be formed between R2, R3 and J is provided here and is useful in the pharmacological field. ##STR1##

公开(公告)号：US09105756B2

公开(公告)日：2015-08-11

申请号：US13540673

申请日：2012-07-03

申请人： Keiji Ishibashi

发明人： Keiji Ishibashi

IPC分类号： H01L29/49 ,  H01L29/872 ,  H01L29/66 ,  H01L29/868 ,  H01L29/04 ,  H01L29/16

CPC分类号： H01L29/36 ,  B28D5/045 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/868 ,  H01L29/872

摘要： A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.

摘要翻译： 能够降低导通电阻并提高半导体器件的产率的碳化硅衬底由单晶碳化硅制成，并且硫原子以不小于60×10 10原子/ cm 2的比例存在于一个主表面中，而不是更多 大于2000×10 10原子/ cm 2，氧原子以不低于3at％且不大于30at％的比例存在于一个主表面中。

公开(公告)号：US20120164833A1

公开(公告)日：2012-06-28

申请号：US13415859

申请日：2012-03-09

申请人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： H01L21/02024 ,  C09G1/04

摘要： Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.

摘要翻译： 所使用的是抛光剂，以及利用该试剂的化合物半导体制造方法和半导体器件制造方法，由此可以有利地保持化合物半导体衬底的表面质量，并且还可以维持高的抛光速率。 抛光剂是用于GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的抛光剂，包括碱金属碳酸盐，碱 金属有机盐，氯系氧化剂和碱金属磷酸盐，其中碱金属碳酸盐和碱金属有机盐的浓度之和为0.01mol / L至0.02mol / L。 化合物半导体制造方法包括制备化合物半导体的GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的步骤， 使用上述抛光剂的化合物半导体的表面。

公开(公告)号：US08192543B2

公开(公告)日：2012-06-05

申请号：US12216237

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B21/02

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US08101968B2

公开(公告)日：2012-01-24

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US20110031589A1

公开(公告)日：2011-02-10

申请号：US12934319

申请日：2009-01-19

申请人： Keiji Ishibashi

发明人： Keiji Ishibashi

IPC分类号： H01L29/20 ,  H01L21/306

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406

摘要： A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.

摘要翻译： 一个实施例中的III族氮化物衬底具有表面层。 表层含有3个。 ％至25点。 碳原子数为5×10 10原子/ cm 2至200×10 10原子/ cm 2的p型金属元素。 III族氮化物衬底具有稳定的表面。

公开(公告)号：US07854804B2

公开(公告)日：2010-12-21

申请号：US12216236

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B29/40

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1-d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。