Abstract:
The invention is a field-emission element having a cathode with a sharp apex and a gate with an aperture diameter less than 1 .mu.m that is fabricated by covering a silicon substrate with a silicon oxide layer, forming an etching mask of 1.0 .mu.m diameter from a silicon oxide layer by photolithography, wet-etching the etching mask to form a minute etching mask of less diameter, dry etching the substrate to form a cylindrical solid structure, followed by anisotropic etching to form a couple of minute conical-shaped structures facing each other and connected by their respective tops, vacuum evaporating around the minute structures an insulating layer and thereon a conducting layer for use as a gate electrode, and etching the minute structure to lift off the upper part of the minute conical shaped structures.
Abstract:
A main body case containing therein an air blower for circulating ambient air and a heat exchanger for exchanging heat between the ambient air circulated by the air blower and inside air, flange provided in main body case and having wall surface joining surface joined to wall surface where main body case is arranged, and cover attached to flange, having a louver in a side of the inside air, and a plurality of opening holes in a side of the ambient air and covering the ambient air side of main body case, thereby making an attachment and a detachment of cover easy, and achieving a reduction of a maintenance work.
Abstract:
An X-ray sensor according to the present invention includes: a light-transmissive substrate (17); a light-transmissive electrode (21) formed on one surface of the light-transmissive substrate (17); and a photoconductive film (18) including a hole injection blocking layer (22), a field buffer layer (23), a hole trap layer (24), a photoconductive sensitive layer (25) having a charge-multiplying function, and an electron injection blocking layer (26), the layers being sequentially provided on the one surface of the light-transmissive substrate (17) having the light-transmissive electrode (21). The field buffer layer (23) is larger in thickness than a layer composed of the light-transmissive electrode (21) and the hole injection blocking layer (22).
Abstract:
An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a trimming electrode and reaches a target. Each of the plurality of through holes in the trimming electrode has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The length of the electron beam passageway is larger than the diameter of the opening. Part of the electron beam that has entered the through holes is absorbed and removed by a lateral wall of the electron beam passageway. In this way, it is possible to provide a high-definition field-emission electron source apparatus in which divergence of an electron beam emitted from a field-emission electron source array is suppressed.
Abstract:
A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.
Abstract:
A cathode includes emitter tips provided on a substrate, a gate electrode with an electric field formed between the gate electrode and the emitter tips, and terminals and leads for supplying voltages to the emitter tips and the gate electrode, respectively. A shield electrode further is provided between the cathode and a control electrode, and the shield electrode has a cylindrical projecting portion projecting toward the cathode, through which electron beams pass. The disturbance of an electric field by the leads influences the electron beams; however, this can be prevented by the projecting portion. Because of this, even if the size of the cathode is reduced, the distortion of an electron beam spot on a phosphor screen can be reduced. As a result, a cathode-ray tube with high resolution can be provided at a low cost.
Abstract:
A recess portion in a bowl-like shape is formed at the center of a silicon substrate, and plural cathodes are formed in a matrix with a predetermined distance therebetween on the bottom of the recess portion. Around each cathode on the silicon substrate, a withdrawn electrode is formed with an insulating film disposed therebelow. A first wire layer connected with the withdrawn electrode at one end extends along a slant side face of the recess portion and on the top face of a protrusion portion. A sealing cover in the shape of a flat plate of a transparent glass plate or the like is integrated with the silicon substrate with a circular sealing material disposed therebetween. A space formed among the silicon substrate, the circular sealing material and the sealing cover is retained to be vacuated.
Abstract:
A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
Abstract:
A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
Abstract:
A heat generating body box housing refrigeration device includes a first refrigerant cycle in which a first condenser and a first evaporator are connected by a first refrigerant liquid pipe and a first refrigerant steam pipe and a second refrigerant cycle in which a second condenser and a second evaporator are connected by a second refrigerant liquid pipe and a second refrigerant steam pipe. The first refrigerant liquid pipe is connected between a first joint and a second joint, the first refrigerant steam pipe is connected between a third joint and a fourth joint, the second refrigerant liquid pipe is connected between a fifth joint and a sixth joint, and the second refrigerant steam pipe is connected between a seventh joint and an eighth joint.